Recent Advances in Halide Perovskite Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 23 May 2025 | Viewed by 2534

Special Issue Editors


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Guest Editor
School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
Interests: optoelectronic materials and devices; halide perovskite; high-energy radiation detection
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Guest Editor
Materials Science and Engineering, Beijing Institute of Technology, Beijing, China
Interests: synthesis and optoelectronic devices based on halide perovskites

Special Issue Information

Dear Colleagues,

Halide perovskites have been widely studied for their excellent electrical and optical properties, including tunable band gap, high charge carrier mobility, long lifetime, strong optical absorption, high luminescence efficiency, high defect tolerance and easy and low-cost fabrication using low-temperature solution process. Therefore, they are considered as promising materials for a variety of applications including photovoltaics, photodetectors, light-emitting diodes, lasers, photosynthesis and photocatalysts. Specifically, halide perovskite nanomaterials, including 0D quantum dots, 1D nanowires, 2D nanoplatelets and their combinations with mixed dimensions, have the advantages of both halide perovskites and nanomaterials and are emerging materials for optoelectronic devices. During the past few years, significant progress has been made toward the controlled synthesis of halide perovskite nanomaterials and the fabrication of high-performance optoelectronic devices. However, several major issues remain to be solved for the practical application of halide perovskites, for example, the synthesis of phase pure nanomaterials, the defect passivation of perovskite nanomaterials, the improvement of phase and environmental stability, the optimization of functional layers in optoelectronic devices, the design of lead-free perovskite materials and the large-scale synthesis for industrial applications.

This Special Issue aims to cover the recent progress on the design, synthesis and applications of halide perovskite nanomaterials, including but not limited to the following:

  • Synthesis of halide perovskite nanomaterials;
  • Design of novel lead-free halide perovskites;
  • Defect and interfacial passivation;
  • Advanced characterizations of halide perovskite nanomaterials;
  • Optoelectronic devices including photovoltaics, light-emitting devices, photodetectors, and radiation detectors;
  • Photocatalysts and photosynthesis;
  • Biomedical applications.

Prof. Dr. Fangze Liu
Dr. Jing Wei
Guest Editors

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Keywords

  • halide perovskites
  • quantum dots
  • nanocrystals
  • photovoltaics
  • photodetectors
  • light-emitting diodes

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Published Papers (3 papers)

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Research

13 pages, 3766 KiB  
Article
ZrBr4-Mediated Phase Engineering in CsPbBr3 for Enhanced Operational Stability of White-Light-Emitting Diodes
by Muhammad Amin Padhiar, Yongqiang Ji, Jing Wang, Noor Zamin Khan, Mengji Xiong and Shuxin Wang
Nanomaterials 2025, 15(9), 674; https://doi.org/10.3390/nano15090674 (registering DOI) - 28 Apr 2025
Abstract
The persistent operational instability of all-inorganic cesium lead halide (CsPbX3) perovskite nanocrystals (NCs) has hindered their integration into white-light-emitting diodes (WLEDs). This study introduces a transformative approach by engineering a phase transition from CsPbBr3 NCs to zirconium bromide (ZrBr4 [...] Read more.
The persistent operational instability of all-inorganic cesium lead halide (CsPbX3) perovskite nanocrystals (NCs) has hindered their integration into white-light-emitting diodes (WLEDs). This study introduces a transformative approach by engineering a phase transition from CsPbBr3 NCs to zirconium bromide (ZrBr4)-stabilized hexagonal nanocomposites (HNs) through a modified hot-injection synthesis. Structural analyses revealed that the ZrBr4-mediated phase transformation induced a structurally ordered lattice with minimized defects, significantly enhancing charge carrier confinement and radiative recombination efficiency. The resulting HNs achieved an exceptional photoluminescence quantum yield (PLQY) of 92%, prolonged emission lifetimes, and suppressed nonradiative decay, attributed to effective surface passivation. The WLEDs with HNs enabled a breakthrough luminous efficiency of 158 lm/W and a record color rendering index (CRI) of 98, outperforming conventional CsPbX3-based devices. The WLEDs exhibited robust thermal stability, retaining over 80% of initial emission intensity at 100 °C, and demonstrated exceptional operational stability with negligible PL degradation during 50 h of continuous operation at 100 mA. Commission Internationale de l’Éclairage (CIE) coordinates of (0.35, 0.32) validated pure white-light emission with high chromatic fidelity. This work establishes ZrBr4-mediated HNs as a paradigm-shifting material platform, addressing critical stability and efficiency challenges in perovskite optoelectronics and paving the way for next-generation, high-performance lighting solutions. Full article
(This article belongs to the Special Issue Recent Advances in Halide Perovskite Nanomaterials)
11 pages, 4694 KiB  
Article
Plasmon-Enhanced Photo-Luminescence Emission in Hybrid Metal–Perovskite Nanowires
by Tintu Kuriakose, Hao Sha, Qingyu Wang, Gokhan Topcu, Xavier Romain, Shengfu Yang and Robert A. Taylor
Nanomaterials 2025, 15(8), 608; https://doi.org/10.3390/nano15080608 - 15 Apr 2025
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Abstract
Semiconductor photonic nanowires are critical components for nanoscale light manipulation in integrated photonic and electronic devices. Optimizing their optical performance requires enhanced photon conversion efficiency, for which a promising solution is to combine semiconductors with noble metals, using the surface plasmon resonance of [...] Read more.
Semiconductor photonic nanowires are critical components for nanoscale light manipulation in integrated photonic and electronic devices. Optimizing their optical performance requires enhanced photon conversion efficiency, for which a promising solution is to combine semiconductors with noble metals, using the surface plasmon resonance of noble metals to enhance the photon absorption efficiency. Here, we report plasmon-enhanced light emission in a hybrid nanowire device composed of perovskite semiconductor nanowires and silver nanoparticles formed using superfluid helium droplets. A cesium lead halide perovskite-based four-layer structure (CsPbBr3/PMMA/Ag/Si) effectively reduces the metal’s plasmonic losses while ensuring efficient surface plasmon–photon coupling at moderate power. Microphotoluminescence and time-resolved spectroscopy techniques are used to investigate the optical properties and emission dynamics of carriers and excitons within the hybrid device. Our results demonstrate an intensity enhancement factor of 29 compared with pure semiconductor structures at 4 K, along with enhanced carrier recombination dynamics due to plasmonic interactions between silver nanoparticles and perovskite nanowires. This work advances existing approaches for exciting photonic nanowires at low photon densities, with potential applications in optimizing single-photon excitations and emissions for quantum information processing. Full article
(This article belongs to the Special Issue Recent Advances in Halide Perovskite Nanomaterials)
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12 pages, 2649 KiB  
Article
Synthesis and Optical Properties of CdSeTe/CdZnS/ZnS Core/Shell Nanorods
by Geyu Jin, Yicheng Zeng, Xiao Liu, Qingya Wang, Jing Wei, Fangze Liu and Hongbo Li
Nanomaterials 2024, 14(11), 989; https://doi.org/10.3390/nano14110989 - 6 Jun 2024
Cited by 1 | Viewed by 1841
Abstract
Semiconductor nanorods (NRs) have great potential in optoelectronic devices for their unique linearly polarized luminescence which can break the external quantum efficiency limit of light-emitting diodes (LEDs) based on spherical quantum dots. Significant progress has been made for developing red, green, and blue [...] Read more.
Semiconductor nanorods (NRs) have great potential in optoelectronic devices for their unique linearly polarized luminescence which can break the external quantum efficiency limit of light-emitting diodes (LEDs) based on spherical quantum dots. Significant progress has been made for developing red, green, and blue light-emitting NRs. However, the synthesis of NRs emitting in the deep red region, which can be used for accurate red LED displays and promoting plant growth, is currently less explored. Here, we report the synthesis of deep red CdSeTe/CdZnS/ZnS dot-in-rod core/shell NRs via a seeded growth method, where the doping of Te in the CdSe core can extend the NR emission to the deep red region. The rod-shaped CdZnS shell is grown over CdSeTe seeds. By growing a ZnS passivation shell, the CdSeTe/CdZnS/ZnS NRs exhibit a photoluminescence emission peak at 670 nm, a full width at a half maximum of 61 nm and a photoluminescence quantum yield of 45%. The development of deep red NRs can greatly extend the applications of anisotropic nanocrystals. Full article
(This article belongs to the Special Issue Recent Advances in Halide Perovskite Nanomaterials)
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