Recent Advances in Halide Perovskite Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 10 October 2024 | Viewed by 509

Special Issue Editors


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Guest Editor
School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
Interests: optoelectronic materials and devices; halide perovskite; high-energy radiation detection
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Guest Editor
Materials Science and Engineering, Beijing Institute of Technology, Beijing, China
Interests: synthesis and optoelectronic devices based on halide perovskites

Special Issue Information

Dear Colleagues,

Halide perovskites have been widely studied for their excellent electrical and optical properties, including tunable band gap, high charge carrier mobility, long lifetime, strong optical absorption, high luminescence efficiency, high defect tolerance and easy and low-cost fabrication using low-temperature solution process. Therefore, they are considered as promising materials for a variety of applications including photovoltaics, photodetectors, light-emitting diodes, lasers, photosynthesis and photocatalysts. Specifically, halide perovskite nanomaterials, including 0D quantum dots, 1D nanowires, 2D nanoplatelets and their combinations with mixed dimensions, have the advantages of both halide perovskites and nanomaterials and are emerging materials for optoelectronic devices. During the past few years, significant progress has been made toward the controlled synthesis of halide perovskite nanomaterials and the fabrication of high-performance optoelectronic devices. However, several major issues remain to be solved for the practical application of halide perovskites, for example, the synthesis of phase pure nanomaterials, the defect passivation of perovskite nanomaterials, the improvement of phase and environmental stability, the optimization of functional layers in optoelectronic devices, the design of lead-free perovskite materials and the large-scale synthesis for industrial applications.

This Special Issue aims to cover the recent progress on the design, synthesis and applications of halide perovskite nanomaterials, including but not limited to the following:

  • Synthesis of halide perovskite nanomaterials;
  • Design of novel lead-free halide perovskites;
  • Defect and interfacial passivation;
  • Advanced characterizations of halide perovskite nanomaterials;
  • Optoelectronic devices including photovoltaics, light-emitting devices, photodetectors, and radiation detectors;
  • Photocatalysts and photosynthesis;
  • Biomedical applications.

Prof. Dr. Fangze Liu
Dr. Jing Wei
Guest Editors

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Keywords

  • halide perovskites
  • quantum dots
  • nanocrystals
  • photovoltaics
  • photodetectors
  • light-emitting diodes

Published Papers (1 paper)

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Research

12 pages, 2649 KiB  
Article
Synthesis and Optical Properties of CdSeTe/CdZnS/ZnS Core/Shell Nanorods
by Geyu Jin, Yicheng Zeng, Xiao Liu, Qingya Wang, Jing Wei, Fangze Liu and Hongbo Li
Nanomaterials 2024, 14(11), 989; https://doi.org/10.3390/nano14110989 - 6 Jun 2024
Viewed by 379
Abstract
Semiconductor nanorods (NRs) have great potential in optoelectronic devices for their unique linearly polarized luminescence which can break the external quantum efficiency limit of light-emitting diodes (LEDs) based on spherical quantum dots. Significant progress has been made for developing red, green, and blue [...] Read more.
Semiconductor nanorods (NRs) have great potential in optoelectronic devices for their unique linearly polarized luminescence which can break the external quantum efficiency limit of light-emitting diodes (LEDs) based on spherical quantum dots. Significant progress has been made for developing red, green, and blue light-emitting NRs. However, the synthesis of NRs emitting in the deep red region, which can be used for accurate red LED displays and promoting plant growth, is currently less explored. Here, we report the synthesis of deep red CdSeTe/CdZnS/ZnS dot-in-rod core/shell NRs via a seeded growth method, where the doping of Te in the CdSe core can extend the NR emission to the deep red region. The rod-shaped CdZnS shell is grown over CdSeTe seeds. By growing a ZnS passivation shell, the CdSeTe/CdZnS/ZnS NRs exhibit a photoluminescence emission peak at 670 nm, a full width at a half maximum of 61 nm and a photoluminescence quantum yield of 45%. The development of deep red NRs can greatly extend the applications of anisotropic nanocrystals. Full article
(This article belongs to the Special Issue Recent Advances in Halide Perovskite Nanomaterials)
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