Wide Bandgap Semiconductor Based Solar-Blind Photodetectors
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".
Deadline for manuscript submissions: closed (15 November 2021)
Special Issue Editors
Interests: wide-bandgap semiconductors; ultraviolet photodetectors; defects in semiconductors; microscopy of semiconductors
Interests: wide bandgap semiconductors (especially III-nitrides); semiconductor spectroscopy; photovoltaic materials; nanostructures
Interests: III-nitrides; luminescence spectroscopy; scanning electron microscopy
Interests: optoelectronics; wide bandgap semiconductors
Special Issue Information
Dear Colleagues,
Wide bandgap semiconductors—including AlxGa1-xN, Ga2O3, BN, MgxZn1-xO, and diamond—have attracted increasing interest over the last decade both from academia and industry. These materials have given rise to numerous disruptive applications such as ultraviolet (UV) light emitting diodes, UV lasers, power rectifiers and power field effect transistors. In contrast, applications involving the detection of UV light have received much less attention. The recent emergence of new wide bandgap semiconductors such as Ga2O3 polymorphs has sparked renewed interest for UV sensing, in particular in the solar-blind region.
Accordingly, this Special Issue will showcase the latest advances in solar-blind photodetectors based on wide bandgap semiconductors and will cover aspects of material synthesis and device processing, structural and optoelectronic properties of photodetectors, material and device modelling, to name a few.
We look forward to receiving your submissions!
Dr. Fabien Massabuau
Prof. Dr. Robert W. Martin
Dr. Paul R. Edwards
Prof. Dr. Weihua Tang
Prof. Dr. Chong-Xin Shan
Guest Editors
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Keywords
- Ultraviolet photodetectors
- Wide bandgap semiconductors: AlxGa1-xN, Ga2O3, BN, MgxZn1-xO, Diamond
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