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Semiconducting-Nanomaterials-Based Electronic and Optoelectronic Devices

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A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (10 March 2021) | Viewed by 15466

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Special Issue Editor

Prof. Dr. Joohoon Kang

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Guest Editor

School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
Interests: nanomaterials; semiconductor; electronics; optoelectronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Rapid advances in the field of semiconducting nanomaterials allow new opportunities for next-generation electronics and optoelectronics. For example, one-dimensional semiconducting carbon nanotubes and two-dimensional semiconducting analogous graphenes such as transition metal dichalcogenides, black phosphorus, etc. have been utilized for high-performance transistors, memory devices, diodes, and photodetectors. In addition, an emerging semiconductor category, halide perovskites, has been introduced for promising optoelectronic applications due to its remarkable optical and electrical properties.

The Special Issue on “Semiconducting Nanomaterials Based Electronic and Optoelectronic Devices” brings together contributions from scientists working on nanomaterials and their electronic/optoelectronic applications to overview the current state-of-the-art research. The main topics of the Issue will cover emerging nanomaterials, nanomaterials processing, electronic devices, and optoelectronic devices.

We look forward to seeing your submissions!

Prof. Dr. Joohoon Kang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

semiconducting nanomaterials
electronics
optoelectronics
photodetectors

Published Papers (4 papers)

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Research

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6 pages, 1948 KiB

Open AccessArticle

Melt Blown Fiber-Assisted Solvent-Free Device Fabrication at Low-Temperature

by Minjong Lee, Joohoon Kang and Young Tack Lee

Micromachines 2020, 11(12), 1091; https://doi.org/10.3390/mi11121091 - 10 Dec 2020

Cited by 1 | Viewed by 2232

Abstract

In this paper, we propose a solvent-free device fabrication method using a melt-blown (MB) fiber to minimize potential chemical and thermal damages to transition-metal-dichalcogenides (TMDCs)-based semiconductor channel. The fabrication process is composed of three steps; (1) MB fibers alignment as a shadow mask, (2) metal deposition, and (3) lifting-up MB fibers. The resulting WSe₂-based p-type metal-oxide-semiconductor (PMOS) device shows an ON/OFF current ratio of ~2 × 10⁵ (ON current of ~−40 µA) and a remarkable linear hole mobility of ~205 cm²/V·s at a drain voltage of −0.1 V. These results can be a strong evidence supporting that this MB fiber-assisted device fabrication can effectively suppress materials damage by minimizing chemical and thermal exposures. Followed by an MoS₂-based n-type MOS (NMOS) device demonstration, a complementary MOS (CMOS) inverter circuit application was successfully implemented, consisted of an MoS₂ NMOS and a WSe₂ PMOS as a load and a driver transistor, respectively. This MB fiber-based device fabrication can be a promising method for future electronics based on chemically reactive or thermally vulnerable materials. Full article

(This article belongs to the Special Issue Semiconducting-Nanomaterials-Based Electronic and Optoelectronic Devices)

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11 pages, 5291 KiB

Open AccessArticle

Monolithic 1 × 8 DWDM Silicon Optical Transmitter Using an Arrayed-Waveguide Grating and Electro-Absorption Modulators for Switch Fabrics in Intra-Data-Center Interconnects

by Uiseok Jeong, Dong Ho Lee, Kyungwoon Lee and Jung Ho Park

Micromachines 2020, 11(11), 991; https://doi.org/10.3390/mi11110991 - 03 Nov 2020

Cited by 4 | Viewed by 2428

Abstract

In this study, we propose an eight-channel monolithic optical transmitter using silicon electro-absorption modulators (EAMs) based on free-carrier injection by Schottky junctions. The transmitter consists of a 1 × 8 silicon arrayed-waveguide grating (AWG) and eight 500-μm-long EAMs on a 5.41 × 2.84 mm² footprint. It generates eight-channel dense wavelength-division multiplexing (DWDM) outputs with 1.33 nm channel spacing (Δλ) in the C-band from a single broadband light source and modulates each channel with over 3 dB modulation depth at 6 V peak-to-peak. The experimental results showed that the feasibility of a homogeneous silicon DWDM transmitter with a single light source for switch fabrics in intra-data-center interconnects over heterogeneous integration with regards to more complementary metal–oxide–semiconductor (CMOS) compatibility. Full article

(This article belongs to the Special Issue Semiconducting-Nanomaterials-Based Electronic and Optoelectronic Devices)

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10 pages, 6959 KiB

Open AccessArticle

Cu(In,Ga)Se₂ Solar Cells Integrated with Subwavelength Structured Cover Glass Fabricated by One-Step Self-Masked Etching

by Ho-Jung Jeong, Ye-Chan Kim, Sung-Tae Kim, Min-Ho Choi, Young-Hyun Song, Ju-Hyung Yun, Min-Su Park and Jae-Hyung Jang

Micromachines 2020, 11(9), 877; https://doi.org/10.3390/mi11090877 - 21 Sep 2020

Cited by 2 | Viewed by 2460

Abstract

We report an anti-reflective cover glass for Cu(In,Ga)Se₂ (CIGS) thin film solar cells. Subwavelength structures (SWSs) were fabricated on top of a cover glass using one-step self-masked etching. The etching method resulted in dense whiskers with high aspect ratio. The produced structure exhibited excellent anti-reflective properties over a broad wavelength range, from the ultraviolet to the near infrared. Compared to a flat-surface glass, the average transmittance of the glass integrated with the SWSs improved from 92.4% to 95.2%. When the cover glass integrated with the SWSs was mounted onto the top of a CIGS device, the short-circuit current and the efficiency of the solar cell were enhanced by 4.38 and 6%, respectively, compared with a CIGS solar cell without cover glass. Full article

(This article belongs to the Special Issue Semiconducting-Nanomaterials-Based Electronic and Optoelectronic Devices)

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Review

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19 pages, 5654 KiB

Open AccessFeature PaperEditor’s ChoiceReview

A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics

by Mohammad Javad Mirshojaeian Hosseini and Robert A. Nawrocki

Micromachines 2021, 12(6), 655; https://doi.org/10.3390/mi12060655 - 02 Jun 2021

Cited by 52 | Viewed by 7542

Abstract

Flexible electronics enable various technologies to be integrated into daily life and fuel the quests to develop revolutionary applications, such as artificial skins, intelligent textiles, e-skin patches, and on-skin displays. Mechanical characteristics, including the total thickness and the bending radius, are of paramount importance for physically flexible electronics. However, the limitation regarding semiconductor fabrication challenges the mechanical flexibility of thin-film electronics. Thin-Film Transistors (TFTs) are a key component in thin-film electronics that restrict the flexibility of thin-film systems. Here, we provide a brief overview of the trends of the last three decades in the physical flexibility of various semiconducting technologies, including amorphous-silicon, polycrystalline silicon, oxides, carbon nanotubes, and organics. The study demonstrates the trends of the mechanical properties, including the total thickness and the bending radius, and provides a vision for the future of flexible TFTs. Full article

(This article belongs to the Special Issue Semiconducting-Nanomaterials-Based Electronic and Optoelectronic Devices)

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