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Micromachines
Special Issues
Silicon Nanowires Based Sensors and Devices
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Silicon Nanowires Based Sensors and Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (30 November 2020) | Viewed by 4870

Special Issue Editors

Prof. Laurent Pichon

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Guest Editor
Institut d’Electronique et des Télécommunications de Rennes, UMR CNRS 6164, Université de Rennes 1, campus de beaulieu, 263 avenue du général Leclerc, 35042 Rennes cedex, France
Interests: silicon-based thin film layers; silicon nano-objects; electronics devices; sensors
Assoc. Prof. Anne-Claire Salaun

E-Mail Website
Guest Editor
Institut d’Electronique et des Télécommunications de Rennes, UMR CNRS 6164, Université de Rennes 1, campus de beaulieu, 263 avenue du général Leclerc, CEDEX 35042 Rennes, France
Interests: nano-FET; nanosensors; nanowires; biochemical detection

Special Issue Information

Dear Colleagues,

The objective of this Special Issue is to provide an overview of the state-of-the-art, results, and latest advances in research and technological developments on silicon nanowire-based sensors.

Silicon nanowires provide unique advantages for developing sensors in several respects. In particular, they can act as potential functional probes due to their unique properties. Their one-dimensional structure offers the smallest confinement for carrier transport along the longitudinal direction, and their high surface-to-volume ratio can promote detection phenomena to improve sensitivity. Silicon material offers compatibility for surface functionalization and is compatible with gas or liquid media. Then, the use of silicon nanowires as sensitive units offers large application areas covering mechanical probing, gas detection, chemical sensing, bio-elements recognition, dosing, and microfluidic integration.

Sensors based on silicon nanowires benefit from advanced research trends, especially for the development of new fabrication technologies for integration into the CMOS platform, and for sensing functions’ compatibility with low-cost technologies on various substrates, including flexible substrates.

The issue will cover topics related to chemical, biological, gas, and micromechanical sensors based on either electrical, optical or electro/micromechanical detection methods, and their latest technological advancements to increase their performances and reliability.

Prof. Laurent Pichon
Assoc. Prof. Anne-Claire Salaun
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • silicon nanowires
  • surface functionalization
  • detection methods (electrical, electrochemical, mechanical, optical)
  • sensors (gas, chemical, biological, mechanical, etc.)
  • technologies

Published Papers (2 papers)

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Research

12 pages, 2693 KiB  
Article
Optical Monitoring of the Production Quality of Si-Nanoribbon Chips Intended for the Detection of ASD-Associated Oligonucleotides
by Kristina A. Malsagova, Tatyana O. Pleshakova, Vladimir P. Popov, Igor N. Kupriyanov, Rafael A. Galiullin, Andrey F. Kozlov, Ivan D. Shumov, Anna L. Kaysheva, Fedor V. Tikhonenko, Alexander I. Archakov and Yuri D. Ivanov
Micromachines 2021, 12(2), 147; https://doi.org/10.3390/mi12020147 - 3 Feb 2021
Cited by 5 | Viewed by 1992
Abstract
Gas-phase etching and optical lithography were employed for the fabrication of a silicon nanoribbon chip (Si-NR chip). The quality of the so-fabricated silicon nanoribbons (Si-NRs) was monitored by optical Raman scattering spectroscopy. It was demonstrated that the structures of the Si-NRs were virtually [...] Read more.
Gas-phase etching and optical lithography were employed for the fabrication of a silicon nanoribbon chip (Si-NR chip). The quality of the so-fabricated silicon nanoribbons (Si-NRs) was monitored by optical Raman scattering spectroscopy. It was demonstrated that the structures of the Si-NRs were virtually defect-free, meaning they could be used for highly sensitive detection of biological macromolecules. The Si-NR chips were then used for the highly sensitive nanoelectronics detection of DNA oligonucleotides (oDNAs), which represent synthetic analogs of 106a-5p microRNA (miR-106a-5p), associated with the development of autism spectrum disorders in children. The specificity of the analysis was attained by the sensitization of the Si-NR chip sur-face by covalent immobilization of oDNA probes, whose nucleotide sequence was complementary to the known sequence of miR-106a-5p. The use of the Si-NR chip was demonstrated to al-low for the rapid label-free real-time detection of oDNA at ultra-low (~10−17 M) concentrations. Full article
(This article belongs to the Special Issue Silicon Nanowires Based Sensors and Devices)
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14 pages, 3775 KiB  
Article
Comprehensive Understanding of Silicon-Nanowire Field-Effect Transistor Impedimetric Readout for Biomolecular Sensing
by Abhiroop Bhattacharjee, Thanh Chien Nguyen, Vivek Pachauri, Sven Ingebrandt and Xuan Thang Vu
Micromachines 2021, 12(1), 39; https://doi.org/10.3390/mi12010039 - 31 Dec 2020
Cited by 5 | Viewed by 2538
Abstract
Impedance sensing with silicon nanowire field-effect transistors (SiNW-FETs) shows considerable potential for label-free detection of biomolecules. With this technique, it might be possible to overcome the Debye-screening limitation, a major problem of the classical potentiometric readout. We employed an electronic circuit model in [...] Read more.
Impedance sensing with silicon nanowire field-effect transistors (SiNW-FETs) shows considerable potential for label-free detection of biomolecules. With this technique, it might be possible to overcome the Debye-screening limitation, a major problem of the classical potentiometric readout. We employed an electronic circuit model in Simulation Program with Integrated Circuit Emphasis (SPICE) for SiNW-FETs to perform impedimetric measurements through SPICE simulations and quantitatively evaluate influences of various device parameters to the transfer function of the devices. Furthermore, we investigated how biomolecule binding to the surface of SiNW-FETs is influencing the impedance spectra. Based on mathematical analysis and simulation results, we proposed methods that could improve the impedimetric readout of SiNW-FET biosensors and make it more explicable. Full article
(This article belongs to the Special Issue Silicon Nanowires Based Sensors and Devices)
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