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15 pages, 66052 KiB

Open AccessArticle

Performance Analysis of an α-Graphyne Nano-Field Effect Transistor

by Habibullah Khan, Md. Monirul Islam, Rajnin Imran Roya, Sariha Noor Azad and Mahbub Alam

Micromachines 2023, 14(7), 1385; https://doi.org/10.3390/mi14071385 - 6 Jul 2023

Viewed by 1530

Graphyne has attractive electronic properties that make it a possible replacement of silicon in FET technology. In FET technology, the goal is to achieve low power dissipation and lower subthreshold swing. In this study, we focused on achieving these goals and studied the [...] Read more.

Graphyne has attractive electronic properties that make it a possible replacement of silicon in FET technology. In FET technology, the goal is to achieve low power dissipation and lower subthreshold swing. In this study, we focused on achieving these goals and studied the electronic properties of α-graphyne nanoribbons. We simulated the transfer and output characteristics of an α-graphyne ballistic nanoribbon FET. We used the tight-binding model with nearest-neighbor approximation to obtain the band structure which gives the same band structure as the one found from the DFT. In order to simulate the I-V characteristics of the transistor we used the non-equilibrium Green’s function (NEGF) formalism. The results show that the modeled FET can provide a high Ion/Ioff ratio and low subthreshold swing. We also studied the effects of defects as defects cannot be avoided in any practical device. The study shows that the Ion/Ioff ratio and subthreshold swing improves as defects are added, but the delay time and dynamic power dissipation worsen. Full article

(This article belongs to the Special Issue Novel Electronics Devices Integrated with 2D Quantum Materials)

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12 pages, 3573 KiB

Open AccessArticle

Photodetection Enhancement via Graphene Oxide Deposition on Poly 3-Methyl Aniline

by Asmaa M. Elsayed, Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, Salem AlFaify, Mohd Shkir, Tahani A. Alrebdi, Kholoud S. Almugren, Feodor V. Kusmatsev and Mohamed Rabia

Micromachines 2023, 14(3), 606; https://doi.org/10.3390/mi14030606 - 6 Mar 2023

Cited by 11 | Viewed by 1350

Abstract

A graphene oxide (GO)/poly 3-methyl aniline (P3MA) photodetector has been developed for light detection in a broad optical region: UV, Vis, and IR. The 3-methyl aniline was initially synthesized via radical polymerization using an acid medium, i.e., K₂S₂O₈ [...] Read more.

A graphene oxide (GO)/poly 3-methyl aniline (P3MA) photodetector has been developed for light detection in a broad optical region: UV, Vis, and IR. The 3-methyl aniline was initially synthesized via radical polymerization using an acid medium, i.e., K₂S₂O₈ oxidant. Consequently, the GO/P3MA composite was obtained through the adsorption of GO into the surface of P3MA. The chemical structure and optical properties of the prepared materials have been illustrated via XRD, FTIR, SEM, and TEM analysis. The absorbance measurements demonstrate good optical properties in the UV, Vis, and near-IR regions, although a decrease in the bandgap from 2.4 to 1.6 eV after the composite formation was located. The current density (J_ph) varies between 0.29 and 0.68 mA·cm⁻² (at 2.0 V) under dark and light, respectively. The photodetector has been tested using on/off chopped light at a low potential, in which the produced J_ph values decrease from 0.14 to 0.04 µA·cm⁻², respectively. The GO/P3MA photodetector exhibits excellent R (and D) values of 4 and 2.7 mA·W⁻¹ (0.90 × 10⁹ and 0.60 × 10⁹ Jones) in the UV (340 nm) and IR (730 nm) regions, respectively. The R and D values obtained here make the prepared photodetector a promising candidate for future light detection instruments. Full article

(This article belongs to the Special Issue Novel Electronics Devices Integrated with 2D Quantum Materials)

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8 pages, 1714 KiB

Open AccessArticle

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

by Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen and Kuo-Jen Chang

Micromachines 2022, 13(9), 1554; https://doi.org/10.3390/mi13091554 - 19 Sep 2022

Cited by 1 | Viewed by 2079

Abstract

This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. Devices with zero, two, and three FP [...] Read more.

This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. Devices with zero, two, and three FP layers were designed. The FP layers of the HEMTs dispersed the electric field between the gate and drain regions. The device with two FP layers exhibited a high off-state breakdown voltage of 1549 V because of the long distance between its first FP layer and the channel. The devices were subjected to high-temperature reverse bias and high-temperature gate bias measurements to examine their characteristics, which satisfied the reliability specifications of JEDEC. Full article

(This article belongs to the Special Issue Novel Electronics Devices Integrated with 2D Quantum Materials)

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