Emerging Nanomaterials and Novel Structures for Photodetectors and Their Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: 31 May 2025 | Viewed by 629

Special Issue Editor


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Guest Editor
School of Microelectronics Science and Technology, Sun Yat-sen University Zhuhai Campus, Zhuhai 519082, China
Interests: optoelectronic devices; nanomaterials; photodetectors
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Special Issue Information

Dear Colleagues,

Photodetectors have the ability to detect and transform light signals with diverse wavelengths, intensities, and polarization into electrical signals, which play an irreplaceable role in collecting information. In the era of “the Internet of Things”, the demand for photodetectors is escalating for some new application scenarios such as high-speed communication, advanced imaging technology, and high-precision sensing. To meet the growing demand for higher figure-of-merit parameters, much effort has been spent to improve the performance of photodetectors by developing new materials, designing novel device structures, applying new device physics, and exploring innovative applications. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on the following:

(1) Emerging Optoelectronic Materials: including but not limited to the methodology of synthesizing and characterizing novel materials, such as perovskites, polymers, novel two-dimensional materials, and quantum dots.

(2) Novel Device Structure and Physics: including but not limit to designing novel structures, revealing novel operating principles, and applying new physics to improve the figure-of-merit parameters of photodetectors.

(3) Innovative Application: including but not limit to the demonstration of burgeoning applications of photodetectors in the field of fundamental science, communication, and imaging.

We are especially interested in manuscripts that present innovative uses of photodetectors for the monitoring of human health or marine environment.

We look forward to receiving your submissions!

Dr. Zhanfeng Huang
Guest Editor

Manuscript Submission Information

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Keywords

  • photodetectors
  • optoelectronic sensors
  • optoelectronic materials
  • photodetector design and integration
  • perovskite photodetector
  • organic photodetector, imaging technology
  • human health monitoring
  • marine environmental monitoring

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Published Papers (1 paper)

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Research

20 pages, 6264 KiB  
Article
A Study on the Impact of Vanadium Doping on the Structural, Optical, and Optoelectrical Properties of ZnS Thin Films for Optoelectronic Applications
by H. Y. S. Al-Zahrani, I. M. El Radaf and A. Lahmar
Micromachines 2025, 16(3), 337; https://doi.org/10.3390/mi16030337 - 14 Mar 2025
Viewed by 428
Abstract
This study details the manufacture of vanadium-doped ZnS thin films via a cost-effective spray pyrolysis technique at varying concentrations of vanadium (4, 8, and 12 wt.%). The XRD data demonstrate the hexagonal structure of the vanadium-doped ZnS layers. The analysis of their structural [...] Read more.
This study details the manufacture of vanadium-doped ZnS thin films via a cost-effective spray pyrolysis technique at varying concentrations of vanadium (4, 8, and 12 wt.%). The XRD data demonstrate the hexagonal structure of the vanadium-doped ZnS layers. The analysis of their structural properties indicates that the crystallite size (D) of the vanadium-doped ZnS films decreased as the vanadium concentration rose. The strain and dislocation density of the analyzed films were enhanced by increasing the vanadium content from 4 to 12 wt.%. The linear optical results of the vanadium-doped ZnS films revealed that the refractive index values were improved from 2.31 to 3.49 by increasing the vanadium concentration in the analyzed samples. Further, the rise in vanadium content enhanced the absorption coefficient. The energy gap (Eg) study indicates that the vanadium-doped ZnS films exhibited direct optical transitions, with the Eg values diminishing from 3.74 to 3.15 eV as the vanadium concentration increased. The optoelectrical analysis shows that the rise in vanadium concentration increases the dispersion energy from 9.48 to 12.76 eV and reduces the oscillator energy from 3.69 to 2.17 eV. The optical carrier concentration of these layers was improved from 1.49 × 1053 to 2.15 × 1053, while the plasma frequency was decreased from 4.34 × 1013 to 3.67 × 1013 by boosting the vanadium concentration from 4 to 12 wt.%. Simultaneously, the increase in vanadium content improves the nonlinear optical parameters of the vanadium-doped ZnS films. The hot probe method identifies these samples as n-type semiconductors. The findings suggest that these samples serve as an innovative window layer. Full article
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