Special Issue "Atomic Scale Materials for Electronic and Photonic Devices"

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (25 May 2018)

Special Issue Editor

Guest Editor
Dr. Deep Jariwala

Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
Website | E-Mail
Phone: 847-708-4755 (M)
Interests: Nanoelectronics; Nanophotonics; Surface Science; Photovoltaics; Condensed Matter Physics; Scanning Probe Techniques; Semiconductor Opto-Electronics

Special Issue Information

Dear Colleagues,

The past three decades have witnessed a meteoric rise in the study of nanoscale materials and systems largely due to the advances in microscopy and nanofabrication techniques. As a result a number of new material systems which possess fundamentally novel structure and physical properties have been discovered and developed. The distinct properties in such materials primarily emerge from the quantum confinement induced changes in electronic band-structure or by interaction of light with sub-wavelength features in the material systems. Often, the uniqueness of these electronic and optical properties catalyses transformative advances in electronic and photonic devices for existing applications such as computing and consumer electronics to novel, unforeseen applications such as quantum communication, sensing and optical modulators. 

This special issue is therefore focused on these materials that have structural features approaching the atomic scale and find utility in a wide array of electronic and photonic device applications. The classes of materials include the recently emerging two-dimensional materials including graphene, transistion metal dichalcogenides, black phosphorus, nanotubes of carbon and boron nitride as well as quantum dots of II-VI, III-V and perovskite semiconductors. This issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel architectures, functions and performance of electronic, opto-electronic and photonic devices based on the above described classes of materials; and (2) new approaches to applying atomic-scale materials to enhance to performance or complement existing state-of-the-art technology in logic switches, light-emitting diodes, photovoltaics, optical modulators, lasers, memory and interconnects.

Dr. Deep Jariwala
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Two-dimensional materials
  • graphene
  • carbon nanotubes
  • transition metal dichalcogenides
  • black phosphorus
  • quantum dots
  • molecular electronics
  • van der Waals heterostructures
  • field-effect transistors
  • tunnel junctions
  • nanolasers
  • single-photon emission
  • tunable-devices
  • ballistic transport
  • quantum wells
  • photovoltaics
  • nanomaterials

Published Papers (5 papers)

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Research

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Open AccessArticle
A Molecular Dynamics Study of the Mechanical Properties of Twisted Bilayer Graphene
Micromachines 2018, 9(9), 440; https://doi.org/10.3390/mi9090440
Received: 6 August 2018 / Revised: 26 August 2018 / Accepted: 26 August 2018 / Published: 31 August 2018
Cited by 1 | PDF Full-text (16835 KB) | HTML Full-text | XML Full-text
Abstract
Graphene is one of the most important nanomaterials. The twisted bilayer graphene shows superior electronic properties compared to graphene. Here, we demonstrate via molecular dynamics simulations that twisted bilayer graphene possesses outstanding mechanical properties. We find that the mechanical strain rate and the [...] Read more.
Graphene is one of the most important nanomaterials. The twisted bilayer graphene shows superior electronic properties compared to graphene. Here, we demonstrate via molecular dynamics simulations that twisted bilayer graphene possesses outstanding mechanical properties. We find that the mechanical strain rate and the presence of cracks have negligible effects on the linear elastic properties, but not the nonlinear mechanical properties, including fracture toughness. The “two-peak” pattern in the stress-strain curves of the bilayer composites of defective and pristine graphene indicates a sequential failure of the two layers. Our study provides a safe-guide for the design and applications of multilayer grapheme-based nanoelectronic devices. Full article
(This article belongs to the Special Issue Atomic Scale Materials for Electronic and Photonic Devices)
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Open AccessArticle
On-Chip Asymmetric Microsupercapacitors Combining Reduced Graphene Oxide and Manganese Oxide for High Energy-Power Tradeoff
Micromachines 2018, 9(8), 399; https://doi.org/10.3390/mi9080399
Received: 12 July 2018 / Revised: 7 August 2018 / Accepted: 10 August 2018 / Published: 12 August 2018
Cited by 2 | PDF Full-text (4772 KB) | HTML Full-text | XML Full-text | Supplementary Files
Abstract
Given the rapid miniaturization of technology, it is of interest to produce viable on-chip micro-electrochemical energy storage systems. In this study, interdigitated asymmetric microsupercapacitors were fabricated using photolithography, lift-off and electrodeposition methods. Manganese oxide (MnOx) and reduced graphene oxide (rGO) comprised [...] Read more.
Given the rapid miniaturization of technology, it is of interest to produce viable on-chip micro-electrochemical energy storage systems. In this study, interdigitated asymmetric microsupercapacitors were fabricated using photolithography, lift-off and electrodeposition methods. Manganese oxide (MnOx) and reduced graphene oxide (rGO) comprised the pseudocapacitive and the double layer component, respectively. Symmetric MnOx//MnOx, rGO//rGO as well as asymmetric rGO//MnOx microsupercapacitors with three different MnOx thicknesses were constructed and characterized in aqueous media. The asymmetric microsupercapacitor with the intermediate MnOx film thickness displayed the optimal energy-power trade-off superior to that of both the symmetric and well as the other asymmetric configurations. The optimal microsupercapacitor exhibited a high stack energy density of 1.02 mWh·cm−3 and a maximal power density of 3.44 W·cm−3. The high energy-power trade-off of the device is attributed to the synergistic effects of utilizing double layer and pseudocapacitive charge storage mechanisms along with in-plane interdigital microelectrode design within one optimized micro-device. Full article
(This article belongs to the Special Issue Atomic Scale Materials for Electronic and Photonic Devices)
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Open AccessArticle
Magnetic Isotropy/Anisotropy in Layered Metal Phosphorous Trichalcogenide MPS3 (M = Mn, Fe)Single Crystals
Micromachines 2018, 9(6), 292; https://doi.org/10.3390/mi9060292
Received: 12 May 2018 / Revised: 1 June 2018 / Accepted: 8 June 2018 / Published: 11 June 2018
Cited by 1 | PDF Full-text (3485 KB) | HTML Full-text | XML Full-text
Abstract
Despite the fact that two-dimensional layered magnetic materials hold immense potential applications in the field of spintronic devices, tunable magnetism is still a challenge due to the lack of controllable synthesis. Herein, high-quality single crystals MPS3 (M= Mn, Fe) of millimeter size [...] Read more.
Despite the fact that two-dimensional layered magnetic materials hold immense potential applications in the field of spintronic devices, tunable magnetism is still a challenge due to the lack of controllable synthesis. Herein, high-quality single crystals MPS3 (M= Mn, Fe) of millimeter size were synthesized through the chemical vapor transport method. After systemic structural characterizations, magnetic properties were studied on the bulk MPS3 layers through experiments, along with first principle theoretical calculations. The susceptibilities as well as the EPR results evidently revealed unique isotropic and anisotropic behavior in MnPS3 and FePS3 crystals, respectively. It is worth noting that both of these materials show antiferromagnetic states at measured temperatures. The estimated antiferromagnetic transition temperature is 78 K for bulk MnPS3 and 123 K for FePS3 crystals. The spin polarized density functional theory calculations confirmed that the band gap of the antiferromagnetic states could be generated owing to asymmetric response all over the energy range. The ferromagnetic state in MnPS3 and FePS3 is less stable as compared to the antiferromagnetic state, resulting in antiferromagnetic behavior. Additionally, frequency-dependent dielectric functions for parallel and perpendicular electric field component vectors, along with the absorption properties of MPS3, are thoroughly investigated. Full article
(This article belongs to the Special Issue Atomic Scale Materials for Electronic and Photonic Devices)
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Open AccessFeature PaperArticle
Micromachined Planar Supercapacitor with Interdigital Buckypaper Electrodes
Micromachines 2018, 9(5), 242; https://doi.org/10.3390/mi9050242
Received: 25 April 2018 / Revised: 11 May 2018 / Accepted: 12 May 2018 / Published: 16 May 2018
Cited by 2 | PDF Full-text (3429 KB) | HTML Full-text | XML Full-text
Abstract
In this work, a flexible micro-supercapacitor with interdigital planar buckypaper electrodes is presented. A simple fabrication process involving vacuum filtration method and SU-8 molding techniques is proposed to fabricate in-plane interdigital buckypaper electrodes on a membrane filter substrate. The proposed process exhibits excellent [...] Read more.
In this work, a flexible micro-supercapacitor with interdigital planar buckypaper electrodes is presented. A simple fabrication process involving vacuum filtration method and SU-8 molding techniques is proposed to fabricate in-plane interdigital buckypaper electrodes on a membrane filter substrate. The proposed process exhibits excellent flexibility for future integration of the micro-supercapacitors (micro-SC) with other electronic components. The device’s maximum specific capacitance measured using cyclic voltammetry was 107.27 mF/cm2 at a scan rate of 20 mV/s. The electrochemical stability was investigated by measuring the performance of charge-discharge at different discharge rates. Devices with different buckypaper electrode thicknesses were also fabricated and measured. The specific capacitance of the proposed device increased linearly with the buckypaper electrode thickness. The measured leakage current was approximately 9.95 µA after 3600 s. The device exhibited high cycle stability, with 96.59% specific capacitance retention after 1000 cycles. A Nyquist plot of the micro-SC was also obtained by measuring the impedances with frequencies from 1 Hz to 50 kHz; it indicated that the equivalent series resistance value was approximately 18 Ω. Full article
(This article belongs to the Special Issue Atomic Scale Materials for Electronic and Photonic Devices)
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Review

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Open AccessFeature PaperReview
Graphene-Based Semiconductor Heterostructures for Photodetectors
Micromachines 2018, 9(7), 350; https://doi.org/10.3390/mi9070350
Received: 29 May 2018 / Revised: 9 July 2018 / Accepted: 11 July 2018 / Published: 13 July 2018
Cited by 4 | PDF Full-text (8584 KB) | HTML Full-text | XML Full-text
Abstract
Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we [...] Read more.
Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed. Full article
(This article belongs to the Special Issue Atomic Scale Materials for Electronic and Photonic Devices)
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