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Quantum Dots: Fundamentals and Applications

This special issue belongs to the section “A:Physics“.

Special Issue Information

Dear Colleagues,

In recent decades, interest in the study of low-dimensional semiconductor heterostructures has increased. These materials are characterized by having a variety of useful properties in the fields of nanoelectronics, optoelectronics, photoelectronics, etc. Among the structures of great importance, both at the theoretical and experimental research levels, are quantum dots (QDs), in which the charge carriers are confined in the three dimensions of nanometric order, meaning that they have discrete energy levels. The advantage QDs is the possibility of modifying their electronic and optical properties by altering their geometry via the application of external fields, hydrostatic pressure, temperature, etc. Based on the above, the wavelength of the light emitted by a quantum dot can be modified, giving rise to applications such as transistors, solar cells, sensors, light-emitting diodes, medical diagnostic imaging, etc. The materials most used for the manufacture of QDs are gallium arsenide (GaAs), cadmium selenide (CdSe), cadmium sulfide (CdS) and zinc telluride (ZnTe), among other similar materials.

Dr. Carlos Duque
Guest Editor

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Keywords

  • quantum dots
  • GaAs
  • CdSe
  • CdS
  • ZnTe
  • nanoelectronics
  • optoelectronics
  • photoelectronics

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Micromachines - ISSN 2072-666X