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Micromachines
Special Issues
Semiconductor and Energy Materials and Processing Technology
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Semiconductor and Energy Materials and Processing Technology

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: 30 September 2025 | Viewed by 3566

Special Issue Editor

Prof. Dr. Sung Gyu Pyo

E-Mail Website
Guest Editor
School of Integrative Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
Interests: new materials; processing and design; integrated systems; 3D integration; semiconductor materials; process and integration; battery and energy materials; microstructural evolution; characterization
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor and energy materials and processing technology are widely employed in optical devices, electronic devices, sensors, energy, displays, and semiconductors. These semiconductor and energy materials are deposited using metals, ceramics, dielectrics, carbon materials, composites, and hybrid materials, and are widely utilized in the electronics industry, such as in the semiconductors mentioned above. In addition, these semiconductor processing technologies comprise various processes such as PVD (Physically Vapor Deposition), CVD (Chemically Vapor Deposition), ALD (Atomic Layer Deposition), sol–gel processing, electroplating, and electroless plating. The development of high-performance optics, energy, sensors, displays, and semiconductors requires the development of new thin film materials and processes. Therefore, this Special Issue aims to provide an overview of materials and processing technologies that can be employed in various new devices.

The scope of this Special Issue includes, but is not limited to, the following topics:

  • Semiconductor processing technology;
  • Semiconductor materials;
  • Thin film processing;
  • Sensor materials and processing;
  • Optical and electronics materials;
  • Energy materials and processing.

Prof. Dr. Sung Gyu Pyo
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor processing
  • etch process
  • interconnect technology
  • thin film processing
  • battery materials
  • process integration
  • image sensor
  • energy materials and processing

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

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Research

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11 pages, 5313 KiB  
Article
Etching Chemistry Process Optimization of Ethylene Diluted with Helium (C2H4/He) in Interconnect Integration
by Hwa-Rim Lee, Eun-Su Jung, Jin-Uk Yoo, Tae-Min Choi and Sung-Gyu Pyo
Micromachines 2024, 15(12), 1439; https://doi.org/10.3390/mi15121439 - 28 Nov 2024
Cited by 1 | Viewed by 889
Abstract
This study explores the effects of different passivation gases on the properties of polymers formed on aluminum (Al) sidewalls during the etching process in Al-based interconnect structures. The research compares the use of nitrogen (N2) and ethylene diluted with helium (C [...] Read more.
This study explores the effects of different passivation gases on the properties of polymers formed on aluminum (Al) sidewalls during the etching process in Al-based interconnect structures. The research compares the use of nitrogen (N2) and ethylene diluted with helium (C2H4/He) as passivation gases, focusing on the resulting polymer’s composition, thickness, and strength, as well as the levels of residual chlorine post-etch. The findings reveal that using C2H4 leads to the formation of a thinner, weaker polymer with lower chlorine residue compared to the thicker, stronger polymer formed with N2. Elemental analysis further highlights significant differences in carbon and oxygen content, with C2H4-based polymers exhibiting lower carbon and higher oxygen levels. These results underscore the critical impact of passivation gas choice on the etching process and the integrity of Al-based interconnects, offering valuable insights for optimizing metal etching processes in semiconductor manufacturing. Full article
(This article belongs to the Special Issue Semiconductor and Energy Materials and Processing Technology)
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Review

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22 pages, 5992 KiB  
Review
IGZO-Based Electronic Device Application: Advancements in Gas Sensor, Logic Circuit, Biosensor, Neuromorphic Device, and Photodetector Technologies
by Youngmin Han, Juhyung Seo, Dong Hyun Lee and Hocheon Yoo
Micromachines 2025, 16(2), 118; https://doi.org/10.3390/mi16020118 - 21 Jan 2025
Cited by 1 | Viewed by 2372
Abstract
Metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have attracted significant attention from researchers in the fields of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) for decades. This interest is driven by their high electron mobility of over ~10 [...] Read more.
Metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have attracted significant attention from researchers in the fields of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) for decades. This interest is driven by their high electron mobility of over ~10 cm2/V·s and excellent transmittance of more than ~80%. Amorphous IGZO (a-IGZO) offers additional advantages, including compatibility with various processes and flexibility making it suitable for applications in flexible and wearable devices. Furthermore, IGZO-based thin-film transistors (TFTs) exhibit high uniformity and high-speed switching behavior, resulting in low power consumption due to their low leakage current. These advantages position IGZO not only as a key material in display technologies but also as a candidate for various next-generation electronic devices. This review paper provides a comprehensive overview of IGZO-based electronics, including applications in gas sensors, biosensors, and photosensors. Additionally, it emphasizes the potential of IGZO for implementing logic gates. Finally, the paper discusses IGZO-based neuromorphic devices and their promise in overcoming the limitations of the conventional von Neumann computing architecture. Full article
(This article belongs to the Special Issue Semiconductor and Energy Materials and Processing Technology)
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