Emerging Trends in Optoelectronic Device Engineering, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X).

Deadline for manuscript submissions: 31 July 2026 | Viewed by 104

Special Issue Editors


E-Mail Website
Guest Editor
Department of Materials Science and Engineering and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 61186, Republic of Korea
Interests: two dimensional materials; thin-films, chemical vapor deposition (CV); atomic layer deposition (ALD); heterostructures; interface/bandgap engineering; sensors; solar cells; device fabrication; optoelectronic devices
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Gyeongbuk, Republic of Korea
Interests: nanomaterials; spectroscopy; thin films; solar cells
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The field of optoelectronic device engineering is currently experiencing rapid evolution, driven by continuous advancements in materials, fabrication techniques and diverse application domains. This Special Issue aims to comprehensively explore and showcase the latest breakthroughs and emerging trends that shape the landscape of optoelectronics. Recent developments span a broad spectrum of topics, encompassing novel materials such as quantum dots and nanomaterials, innovative fabrication methods aimed at enhancing performance and scalability and integration with cutting-edge technologies like artificial intelligence and the Internet of Things (IoT). Researchers are pushing the boundaries in ultrafast photonics for high-speed communication systems, advancing both organic and inorganic optoelectronic materials, and exploring diverse applications in biomedical imaging, environmental monitoring and renewable energy solutions.

The Special Issue invites contributions from researchers and experts in the field, welcoming original research articles, comprehensive reviews, insightful perspectives and innovative ideas. These contributions will highlight recent progress and forecast future directions in optoelectronic device engineering, fostering collaboration, inspiring new insights and propelling the field towards transformative advancements. By bringing together diverse perspectives and cutting-edge research, this Special Issue aims to serve as a pivotal platform for exchanging knowledge and shaping the future of optoelectronic technologies. We believe that through this collaboration, we can collectively address challenges and leverage opportunities to accelerate the development and deployment of next-generation optoelectronic devices.

We look forward to receiving your valuable contributions for this engaging Special Issue.

Dr. Indu Sharma
Prof. Dr. Vasudeva Reddy Minnam Reddy
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronics
  • 2D materials
  • thin films
  • semiconducting materials
  • quantum dots
  • photoluminescence
  • bandgap engineering
  • photovoltaics
  • optical sensors
  • light emitting diodes (LEDs)
  • solar cells
  • photodetectors
  • photoelectrochemical
  • water splitting

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • Reprint: MDPI Books provides the opportunity to republish successful Special Issues in book format, both online and in print.

Further information on MDPI's Special Issue policies can be found here.

Related Special Issue

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

14 pages, 61684 KB  
Article
A CMOS-Compatible Silicon Nanowire Array Natural Light Photodetector with On-Chip Temperature Compensation Using a PSO-BP Neural Network
by Mingbin Liu, Xin Chen, Jiaye Zeng, Jintao Yi, Wenhe Liu, Xinjian Qu, Junsong Zhang, Haiyan Liu, Chaoran Liu, Xun Yang and Kai Huang
Micromachines 2026, 17(1), 23; https://doi.org/10.3390/mi17010023 - 25 Dec 2025
Abstract
Silicon nanowire (SiNW) photodetectors exhibit high sensitivity for natural light detection but suffer from significant performance degradation due to thermal interference. To overcome this limitation, this paper presents a high-performance, CMOS-compatible SiNW array natural light photodetector with monolithic integration of an on-chip temperature [...] Read more.
Silicon nanowire (SiNW) photodetectors exhibit high sensitivity for natural light detection but suffer from significant performance degradation due to thermal interference. To overcome this limitation, this paper presents a high-performance, CMOS-compatible SiNW array natural light photodetector with monolithic integration of an on-chip temperature sensor and an embedded intelligent compensation system. The device, fabricated via microfabrication techniques, features a dual-array architecture that enables simultaneous acquisition of optical and thermal signals, thereby simplifying peripheral circuitry. To achieve high-precision decoupling of the optical and thermal signals, we propose a hybrid temperature compensation algorithm that combines Particle Swarm Optimization (PSO) with a Back Propagation (BP) neural network. The PSO algorithm optimizes the initial weights and thresholds of the BP network, effectively preventing the network from getting trapped in local minima and accelerating the training process. Experimental results demonstrate that the proposed PSO-BP model achieves superior compensation accuracy and a significantly faster convergence rate compared to the traditional BP network. Furthermore, the optimized model was successfully implemented on an STM32 microcontroller. This embedded implementation validates the feasibility of real-time, high-accuracy temperature compensation, significantly enhancing the stability and reliability of the photodetector across a wide temperature range. This work provides a viable strategy for developing highly stable and integrated optical sensing systems. Full article
(This article belongs to the Special Issue Emerging Trends in Optoelectronic Device Engineering, 2nd Edition)
Show Figures

Figure 1

Back to TopTop