3D Pixel Sensors and Detectors

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: closed (15 November 2020) | Viewed by 15348

Special Issue Editors


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Guest Editor
Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Instituto de Microelectrónica de Barcelona, 08193 Barcelona, Spain
Interests: wide bandgap semiconductors; radiation detectors; dosimetry and microdosimetry; FLASH therapy; harsh environments
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Instituto de Física de Cantabria (IFCA), CSIC-Universidad de Cantabria, 39005 Santander, Spain
Interests: CMS; pixel detectors; timing detectors; HEP; semicondactor physics
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Guest Editor
Department of Experimental Particle Physics, Jožef Stefan Institute and Department of Physics, University of Ljubljana, SI-1001 Ljubljana, Slovenia
Interests: radiation detection; semiconductor physics; neutron irradiation; HEP
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Special Issue Information

Dear Colleagues,

In order to increase the radiation hardness of silicon radiation detectors, sensors with a three-dimensional array of electrodes that penetrate into the detector bulk were proposed by S. Parker et al. in 1999. The advantage of this geometry is to set the maximum drift and depletion distance by the electrode spacing rather than by the detector thickness as in the more conventional planar technology. The advantage of this structure includes short collection distances, fast collection times, and low depletion voltages, depending on the electrode diameter and pitch chosen.

The success of this geometry obtained combining VLSI and MEMS (Micro Electro Mechanical Systems) technologies was clear when they were selected for the innermost layer of the ATLAS IBL experiment. The detectors were produced matching the pixel readout electronic geometry and have been in use since 2014 at CERN experiments.

Different applications have benefited from advancements in 3D detector technologies. For instance, new micro-dosimeters that can measure the linear energy transfer (LET) of ionizing particles at cellular levels were developed recently at CNM-IMB. At the same time, highly efficient neutron detectors with trenches or 3D detectors made in diamond were also developed by several research groups around the world.

Dr. Giulio Pellegrini
Dr. Ivan Vila
Dr. Gregor Kramberger
Guest Editors

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Keywords

  • Radiation hard sensors for HEP
  • Timing detectors, HEP or medical
  • Dosimetry (medical and space)
  • Neutron detectors
  • Diamond detectors

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Published Papers (3 papers)

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Research

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23 pages, 10912 KiB  
Article
Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM
by David Quirion, Maria Manna, Salvador Hidalgo and Giulio Pellegrini
Micromachines 2020, 11(12), 1126; https://doi.org/10.3390/mi11121126 - 18 Dec 2020
Cited by 17 | Viewed by 9109
Abstract
This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve [...] Read more.
This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology. Full article
(This article belongs to the Special Issue 3D Pixel Sensors and Detectors)
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13 pages, 4551 KiB  
Article
Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector
by Manwen Liu, Tao Zhou and Zheng Li
Micromachines 2020, 11(7), 674; https://doi.org/10.3390/mi11070674 - 10 Jul 2020
Cited by 5 | Viewed by 2582
Abstract
In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon detector cell [...] Read more.
In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon detector cell with p-type bulk silicon, such as electric potential distribution, electric field distribution, hole concentration distribution, and leakage current to analyze the full detector depletion voltage and other detector properties. To verify the prediction of ultra-fast response times, we simulate the instant induced current curves before and after irradiation with different minimum ionizing particle (MIP) hitting positions. High position resolution pixel detectors can be fabricated by constructing an array of these extremely small detector cells. Full article
(This article belongs to the Special Issue 3D Pixel Sensors and Detectors)
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Review

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20 pages, 3278 KiB  
Review
Silicon 3D Microdetectors for Microdosimetry in Hadron Therapy
by Consuelo Guardiola, Celeste Fleta, David Quirion, Giulio Pellegrini and Faustino Gómez
Micromachines 2020, 11(12), 1053; https://doi.org/10.3390/mi11121053 - 28 Nov 2020
Cited by 16 | Viewed by 2964
Abstract
The present overview describes the evolution of new microdosimeters developed in the National Microelectronics Center in Spain (IMB-CNM, CSIC), ranging from the first ultra-thin 3D diodes (U3DTHINs) to the advanced 3D-cylindrical microdetectors, which have been developed over the last 10 years. In this [...] Read more.
The present overview describes the evolution of new microdosimeters developed in the National Microelectronics Center in Spain (IMB-CNM, CSIC), ranging from the first ultra-thin 3D diodes (U3DTHINs) to the advanced 3D-cylindrical microdetectors, which have been developed over the last 10 years. In this work, we summarize the design, main manufacture processes, and electrical characterization of these devices. These sensors were specifically customized for use in particle therapy and overcame some of the technological challenges in this domain, namely the low noise capability, well-defined sensitive volume, high spatial resolution, and pile-up robustness. Likewise, both architectures reduce the loss of charge carriers due to trapping effects, the charge collection time, and the voltage required for full depletion compared to planar silicon detectors. In particular, a 3D‒cylindrical architecture with electrodes inserted into the silicon bulk and with a very well‒delimited sensitive volume (SV) mimicked a cell array with shapes and sizes similar to those of mammalian cells for the first time. Experimental tests of the carbon beamlines at the Grand Accélérateur National d’Lourds (GANIL, France) and Centro Nazionale Adroterapia Oncologica (CNAO, Italy) showed the feasibility of the U3DTHINs in hadron therapy beams and the good performance of the 3D‒cylindrical microdetectors for assessing linear energy distributions of clinical beams, with clinical fluence rates of 5 × 107 s−1cm−2 without saturation. The dose-averaged lineal energies showed a generally good agreement with Monte Carlo simulations. The results indicated that these devices can be used to characterize the microdosimetric properties in hadron therapy, even though the charge collection efficiency (CCE) and electronic noise may pose limitations on their performance, which is studied and discussed herein. In the last 3D‒cylindrical microdetector generation, we considerably improved the CCE due to the microfabrication enhancements, which have led to shallower and steeper dopant profiles. We also summarize the successive microdosimetric characterizations performed with both devices in proton and carbon beamlines. Full article
(This article belongs to the Special Issue 3D Pixel Sensors and Detectors)
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