Research on Materials and Properties of Transistors

Dear Colleagues,

In the transistor era, a discovery of new functional materials and innovative structures is crucial to develop next-generation devices beyond Moore’s law since transistor technologies are reaching their physical limit. In other words, radically different types of materials and properties are required to realize the potential of the next generation transistors. The aim of this Special Issue is to provide in-depth analysis and new insight on semiconductor materials and devices for future electronics. It covers a wide range of current interdisciplinary research: (1) synthesis and characterization of organic/inorganic materials; (2) research on various channel materials, such as Si, Ge, III-V, 2D semiconductor, transition metal oxide (TMO), etc.; (3) fabrication techniques such as film deposition, etching, doping, etc.; (4) 3D structures such as vertical and nanosheet channels; (5) electronic device applications such as logic/memory devices, photovoltaics, power devices, sensors, etc.

Dr. Hagyoul Bae
Guest Editor

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