Research on Materials and Properties of Transistors
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (10 August 2022) | Viewed by 148
Special Issue Editor
Interests: 3D HZO ferroelectric logic/memory devices; neuromorphic devices/array; memristor device/circuits; oxide TFTs; nano CMOS; wearable devices; device modeling and characterization
Special Issue Information
Dear Colleagues,
In the transistor era, a discovery of new functional materials and innovative structures is crucial to develop next-generation devices beyond Moore’s law since transistor technologies are reaching their physical limit. In other words, radically different types of materials and properties are required to realize the potential of the next generation transistors. The aim of this Special Issue is to provide in-depth analysis and new insight on semiconductor materials and devices for future electronics. It covers a wide range of current interdisciplinary research: (1) synthesis and characterization of organic/inorganic materials; (2) research on various channel materials, such as Si, Ge, III-V, 2D semiconductor, transition metal oxide (TMO), etc.; (3) fabrication techniques such as film deposition, etching, doping, etc.; (4) 3D structures such as vertical and nanosheet channels; (5) electronic device applications such as logic/memory devices, photovoltaics, power devices, sensors, etc.
Dr. Hagyoul Bae
Guest Editor
Manuscript Submission Information
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Keywords
- functional materials
- organic/inorganic electronic materials
- device fabrication
- logic/memory devices
- power devices
- semiconductor materials
- ferroelectric/dielectric materials
- characterization
- nanostructure