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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (20 September 2023) | Viewed by 5573

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Dr. Maja Mičetić

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Ruđer Bošković Institute, Bijenička cesta 54, Zagreb 10000, Croatia
Interests: nanostructured thin films; self-assembled growth; grazing-incidence X-ray characterization; opto-electrical characterization of thin films
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Special Issue Information

Dear Colleagues,

We cordially invite you to submit your research work to our Special Issue: “Advances in Semiconductor Materials for Sensors and Devices”. We are facing an increased need for the development of novel sensors and devices, which are important for practically all fields of our lives. Semiconductor materials are the basis of modern technology, and advancements in their engineering are important drivers for the development of novel sensors and other technologies. This Special Issue aims to collect novel research results related to advances in semiconductor materials for sensors and other devices.

The scope of this Special Issue is to present the latest theoretical and experimental research related to the preparation, engineering and application of semiconductor materials in sensors and devices. In particular, the topics of interest include, but are not limited to:

- Preparation and properties of novel bulk and nanostructured semiconductor materials;

- Application of semiconductors in sensors and devices;

- Modelling and engineering of semiconductor-based materials and devices.

Dr. Maja Mičetić
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

semiconductor materials
sensors materials, semiconductor quantum dots and quantum wires
semiconductor modelling
photo-electrical properties
nanostructured sensing materials
semiconductor devices

Published Papers (4 papers)

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Research

13 pages, 1519 KiB

Open AccessArticle

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

by Aleksey N. Klochkov, Almas Yskakov, Aleksander N. Vinichenko, Danil A. Safonov, Nikolay I. Kargin, Maksim V. Bulavin, Aleksey V. Galushko, Vladik R. Yamurzin and Ivan S. Vasil’evskii

Materials 2023, 16(20), 6750; https://doi.org/10.3390/ma16206750 - 18 Oct 2023

Viewed by 756

Abstract

The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 10¹⁴ cm⁻² ÷ 1.2 × 10¹⁶ cm⁻². The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications. Full article

(This article belongs to the Special Issue Advances in Semiconductor Materials for Sensors and Devices)

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12 pages, 2826 KiB

Open AccessArticle

The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors

by Chien-Yie Tsay, Yun-Chi Chen, Hsuan-Meng Tsai, Phongsaphak Sittimart and Tsuyoshi Yoshitake

Materials 2022, 15(22), 8145; https://doi.org/10.3390/ma15228145 - 17 Nov 2022

Cited by 4 | Viewed by 1362

Abstract

Pure CuI and Zn-substituted CuI (CuI:Zn) semiconductor thin films, and metal-semiconductor-metal (MSM) photodetectors were fabricated on glass substrates by a low-temperature solution process. The influence of Zn substitution concentration (0–12 at%) on the microstructural, optical, and electrical characteristics of CuI thin films and its role in improving the optoelectronic performance of CuI MSM photodetectors were investigated in this study. Incorporation of Zn cation dopant into CuI thin films improved the crystallinity and increased the average crystalline size. XPS analysis revealed that the oxidation state of Cu ions in all the CuI-based thin films was +1, and the estimated values of [Cu]/[I] for the CuI:Zn thin films were lower than 0.9. It was found that the native p-type conductivity of polycrystalline CuI thin film was converted to n-type conductivity after the incorporation of Zn ions into CuI nanocrystals, and the electrical resistivity decreased with increases in Zn concentration. A time-resolved photocurrent study indicated that the improvements in the optoelectronic performance of CuI MSM photodetectors were obtained through the substitution of Zn ions, which provided operational stability to the two-terminal optoelectronic device. The 8 at% Zn-substituted CuI photodetectors exhibited the highest response current, responsivity, and EQE, as well as moderate specific detectivity. Full article

(This article belongs to the Special Issue Advances in Semiconductor Materials for Sensors and Devices)

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12 pages, 1679 KiB

Open AccessArticle

Ge/Al and Ge/Si₃N₄/Al Core/Shell Quantum Dot Lattices in Alumina: Boosting the Spectral Response by Tensile Strain

by Ivana Periša, Marija Tkalčević, Senad Isaković, Lovro Basioli, Mile Ivanda, Sigrid Bernstorff and Maja Mičetić

Materials 2022, 15(18), 6211; https://doi.org/10.3390/ma15186211 - 7 Sep 2022

Cited by 3 | Viewed by 1305

Abstract

We investigated the production conditions and optoelectrical properties of thin film material consisting of regularly ordered core/shell Ge/Al and Ge/Si₃N₄/Al quantum dots (QDs) in an alumina matrix. The materials were produced by self–assembled growth achieved by means of multilayer magnetron sputtering deposition. We demonstrated the successful fabrication of well-ordered 3D lattices of Ge/Al and Ge/Si₃N₄/Al core/shell quantum dots with a body-centred tetragonal arrangement within the Al₂O₃ matrix. The addition of shells to the Ge core enables a strong tuning of the optical and electrical properties of the material. An Al shell induces a bandgap shift toward smaller energies, and, in addition, it prevents Ge oxidation. The addition of a thin Si₃N₄ shell induces huge changes in the material spectral response, i.e., in the number of extracted excitons produced by a single photon. It increases both the absolute value and the width of the spectral response. For the best sample, we achieved an enhancement of over 250% of the produced number of excitons in the measured energy range. The observed changes are, as it seems, the consequence of the large tensile strain in Ge QDs which is induced by the Si₃N₄ shell addition and which is measured to be about 3% for the most strained QDs. The tensile strain causes activation of the direct bandgap of germanium, which has a very strong effect on the spectral response of the material. Full article

(This article belongs to the Special Issue Advances in Semiconductor Materials for Sensors and Devices)

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11 pages, 3737 KiB

Open AccessArticle

Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix

by Marija Tkalčević, Denis Boršćak, Ivana Periša, Iva Bogdanović-Radović, Iva Šarić Janković, Mladen Petravić, Sigrid Bernstorff and Maja Mičetić

Materials 2022, 15(15), 5353; https://doi.org/10.3390/ma15155353 - 3 Aug 2022

Cited by 3 | Viewed by 1457

Abstract

Thin films containing 3D-ordered semiconductor quantum wires offer a great tool to improve the properties of photosensitive devices. In the present work, we investigate the photo-generated current in thin films consisting of an interconnected 3D-ordered network of Ge quantum wires in an alumina matrix. The films are prepared using nitrogen-assisted magnetron sputtering co-deposition of Ge and Al₂O₃. We demonstrate a strong photocurrent generation in the films, much stronger than in similar films containing Ge quantum dots. The enhanced photocurrent generation is the consequence of the multiple exciton generation and the films’ specific structure that allows for efficient carrier transport. Thin film with the largest nitrogen content showed enhanced performance compared to other thin films with 1.6 excitons created after absorption of a single photon at an energy nearly equal to the double bandgap value. The bandgap value depends on the geometrical properties of the quantum wires, and it is close to the maximum of the solar irradiance in this case. In addition, we show that the multiple exciton generation is the most pronounced at the photon energy values equal to multiple values of the thin film bandgap. Full article

(This article belongs to the Special Issue Advances in Semiconductor Materials for Sensors and Devices)

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