Submit to Materials Review for Materials Propose a Special Issue

Journal Browser

► Journal Browser

Organic Transistors: Current Status and Opportunities

Print Special Issue Flyer
Special Issue Editors
Special Issue Information
Keywords
Published Papers

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (30 June 2021) | Viewed by 13176

Share This Special Issue

Special Issue Editor

Dr. Mamatimin Abbas

E-Mail Website
Guest Editor

CNRS Centre National de la Recherche Scientifique, Paris, France
Interests: organic electronic devices: field effect transistors, organic solar cells, dye sensitized solar cells and photodetectors; solution processed oxide thin film transistors; thin film deposition techniques; X-ray photoelectron and absorption spectroscopies

Special Issue Information

Dear colleagues,

Organic semiconductors have the potential to make available printable, low-cost, flexible, and large-area devices, thus becoming a major research area in materials science. Chemical and device engineering together have ushered in considerable development in this field, where we have already witnessed the appearance, in full force, of organic light-emitting diodes in the market.

Being the backbone of the electronic circuits, organic transistors have also attracted enormous research attention. The performances of both vacuum and solution-processed organic transistors have far exceeded that of amorphous silicon. Their biocompatibility has provided a unique opportunity for their applications as sensing units in bioelectronics. The possibility of the integration of organic transistors in various opto-electronic components provides valuable opportunities to achieve the desired functions. However, there remain a number of challenges before their full potential can be exploited and become a driving force for future electronics. Their stability in various conditions has to go through rigorous tests. N-channel devices have to reach a similar performance as those of their p-channel counterparts, which is one major limiting factor for the development of organic circuits. Organic transistors as a potential candidate to realize an electrically pumped organic laser are to be explored further.

This Special Issue, “Organic Transistors: Current Status and Opportunities”, intends to provide a platform for the research community, where the current status of organic transistors will be highlighted through review articles and recent research results. Research results on any field where organic transistor is utilized can be considered for publication. The scope of this issue includes but is not limited to material synthesis/device evaluation, transistor stability, device simulation, transistor integration into bio/chemical/mechanical sensors, hybrid devices, etc.

Dr. Mamatimin Abbas
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

organic synthesis
device performance
stability
simulation
sensors
hybrid devices
circuits

Published Papers (4 papers)

Download All Papers

Research

Jump to: Other

8 pages, 6323 KiB

Open AccessArticle

Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

by Gizem Acar, Muhammad Javaid Iqbal and Mujeeb Ullah Chaudhry

Materials 2021, 14(4), 901; https://doi.org/10.3390/ma14040901 - 14 Feb 2021

Cited by 2 | Viewed by 2734

Abstract

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm² V⁻¹ s⁻¹ and EQE of 1.6% at a luminance of 2600 cd m⁻². Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications. Full article

(This article belongs to the Special Issue Organic Transistors: Current Status and Opportunities)

► Show Figures

Figure 1

15 pages, 2864 KiB

Open AccessArticle

Carbonyl-Terminated Quinoidal Oligothiophenes as p-Type Organic Semiconductors

by Takato Asoh, Kohsuke Kawabata and Kazuo Takimiya

Materials 2020, 13(13), 3020; https://doi.org/10.3390/ma13133020 - 06 Jul 2020

Cited by 6 | Viewed by 3021

Abstract

A series of quinoidal oligothiophenes terminated with carbonyl groups (nTDs, n = 2–4) are studied as p-type organic semiconductors for the active materials in organic field-effect transistors (OFETs) both by the theoretical and experimental approaches. The theoretical calculations clearly show their high-lying highest occupied molecular orbital (HOMO) energy levels (E_HOMOs), small reorganization energies for hole transport (λ_holes), and large contribution of sulfur atoms to HOMOs, all of which are desirable for p-type organic semiconductors. Thus, we synthesized nTDs from the corresponding aromatic oligothiophene precursors and then evaluated their physicochemical properties and structural properties. These experimental evaluations of nTDs nicely proved the theoretical predictions, and the largest 4TDs in the series (4,4′′′-dihexyl- and 3′,4,4″,4′′′-tetrahexyl-5H,5′′′H-[2,2′:5′,2″:5″,2′′′-quaterthiophene]-5,5′′′-dione) can afford solution-processed OFETs showing unipolar p-type behaviors and hole mobility as high as 0.026 cm² V⁻¹ s⁻¹. Full article

(This article belongs to the Special Issue Organic Transistors: Current Status and Opportunities)

► Show Figures

Graphical abstract

12 pages, 3608 KiB

Open AccessArticle

One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta₂O₅ Gate Dielectrics

by Navid Mohammadian, Sheida Faraji, Srikrishna Sagar, Bikas C. Das, Michael L. Turner and Leszek A. Majewski

Materials 2019, 12(16), 2563; https://doi.org/10.3390/ma12162563 - 12 Aug 2019

Cited by 19 | Viewed by 4367

Abstract

Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. However, for these devices to operate at low voltage, robust and high capacitance gate dielectrics are urgently needed. Herein, the fabrication of OTFTs that operate at 1 V is reported. These devices comprise a solution-processed, self-assembled monolayer (SAM) modified tantalum pentoxide (Ta₂O₅) as the gate dielectric. The morphology and dielectric properties of the anodized Ta₂O₅ films with and without n-octadecyltrichlorosilane (OTS) SAM treatment have been studied. The thickness of the Ta₂O₅ film was optimized by varying the anodization voltage. The results show that organic TFTs gated with OTS-modified tantalum pentoxide anodized at 3 V (d ~7 nm) exhibit the best performance. The devices operate at 1 V with a saturation field-effect mobility larger than 0.2 cm² V⁻¹ s⁻¹, threshold voltage −0.55 V, subthreshold swing 120 mV/dec, and current on/off ratio in excess of 5 × 10³. As a result, the demonstrated OTFTs display a promising performance for applications in low-voltage, portable electronics. Full article

(This article belongs to the Special Issue Organic Transistors: Current Status and Opportunities)

► Show Figures

Figure 1

Other

Jump to: Research

7 pages, 874 KiB

Open AccessLetter

Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

by Damien Thuau, Katherine Begley, Rishat Dilmurat, Abduleziz Ablat, Guillaume Wantz, Cédric Ayela and Mamatimin Abbas

Materials 2020, 13(7), 1583; https://doi.org/10.3390/ma13071583 - 30 Mar 2020

Cited by 5 | Viewed by 2514

Abstract

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed. Full article

(This article belongs to the Special Issue Organic Transistors: Current Status and Opportunities)

► Show Figures