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Special Issue "Electroceramic Materials"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Smart Materials".

Deadline for manuscript submissions: 15 June 2019

Special Issue Editor

Guest Editor
Dr. Antonio Feteira

Sheffield Hallam University, Sheffield, United Kingdom
Website | E-Mail
Interests: lead free piezoelectrics; low temperature firing oxides for electronics; multiferroics

Special Issue Information

Dear Colleagues,

Electroceramics are at the heart of modern electronics because they afford an unmatchable range of electrical, magnetic and optical properties, which underpin the deployment of new technologies. Indeed, nowadays electroceramics are ubiquitous in the technical, scientific, industrial and consumer arenas. Nevertheless, the ever increasing trend towards further miniaturisation of electronic devices is demanding new and improved electroceramics. Simultaneously, in response to raw materials scarcity and environmental concerns research into electroceramics has been forced to take a more sustainable path. Innovative processing and manufacture of electroceramics has also seen extraordinary advances, with the deployment of complex structures with novel combinations of materials, to create innovative products for both the consumer and industrial markets. In a foreseeable future, developments in the electroceramics field can be expected to be driven by implementation of multiscale modelling for optimal design. In particular tailoring of the local structure may enable new functionalities. These three factors have promoted a good wealth of fundamental and applied research into ceramics materials with potential to meet stringent requirements placed by technological areas ranging from wireless communication, energy storage, sensors and actuators, just to mention a few.

Dr. Antonio Feteira
Guest Editor

Manuscript Submission Information

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Keywords

  • Pb-free piezoelectrics
  • ceramic microwave resonators
  • LTCC
  • thermoelectrics
  • ferroelectrics
  • PTCR
  • NTC
  • energy storage
  • local structure
  • processing
  • ionic conductors
  • batteries

Published Papers (4 papers)

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Research

Open AccessFeature PaperArticle
Temperature Stable Cold Sintered (Bi0.95Li0.05)(V0.9Mo0.1)O4-Na2Mo2O7 Microwave Dielectric Composites
Materials 2019, 12(9), 1370; https://doi.org/10.3390/ma12091370
Received: 6 March 2019 / Revised: 25 March 2019 / Accepted: 25 April 2019 / Published: 27 April 2019
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Abstract
Dense (Bi0.95Li0.05)(V0.9Mo0.1)O4-Na2Mo2O7 (100−x) wt.% (Bi0.95Li0.05)(V0.9Mo0.1)O4 (BLVMO)-x wt.% Na2Mo2O7 (NMO) composite ceramics were successfully fabricated [...] Read more.
Dense (Bi0.95Li0.05)(V0.9Mo0.1)O4-Na2Mo2O7 (100−x) wt.% (Bi0.95Li0.05)(V0.9Mo0.1)O4 (BLVMO)-x wt.% Na2Mo2O7 (NMO) composite ceramics were successfully fabricated through cold sintering at 150 °C under at 200 MPa for 30 min. X-ray diffraction, back-scattered scanning electron microscopy, and Raman spectroscopy not only corroborated the coexistence of BLVMO and NMO phases in all samples, but also the absence of parasitic phases and interdiffusion. With increasing NMO concentration, the relative pemittivity (εr) and the Temperature Coefficient of resonant Frequency (TCF) decreased, whereas the Microwave Quality Factor (Qf) increased. Near-zero TCF was measured for BLVMO-20wt.%NMO composites which exhibited εr ~ 40 and Qf ~ 4000 GHz. Finally, a dielectric Graded Radial INdex (GRIN) lens was simulated using the range of εr in the BLVMO-NMO system, which predicted a 70% aperture efficiency at 26 GHz, ideal for 5G applications. Full article
(This article belongs to the Special Issue Electroceramic Materials)
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Open AccessArticle
Intentional Carrier Doping to Realize n-Type Conduction in Zintl Phases Eu5−yLayIn2.2Sb6
Materials 2019, 12(2), 264; https://doi.org/10.3390/ma12020264
Received: 18 December 2018 / Revised: 9 January 2019 / Accepted: 14 January 2019 / Published: 15 January 2019
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Abstract
Due to the tunable electrical transport properties and lower thermal conductivity, Zintl phase compounds have been considered as a promising candidate for thermoelectric applications. Most Sb-based Zintl compounds exhibit essentially p-type conduction as result of the cation vacancy. Herein, n-type Zintl [...] Read more.
Due to the tunable electrical transport properties and lower thermal conductivity, Zintl phase compounds have been considered as a promising candidate for thermoelectric applications. Most Sb-based Zintl compounds exhibit essentially p-type conduction as result of the cation vacancy. Herein, n-type Zintl phases Eu5−yLayIn2.2Sb6 has been successfully synthesized via controlling the vacancy defect combined with intentional electron doping. Excess of In would occupy the vacancy while La doping enables the electron to be the major carrier at the measured temperate range, realizing the n-type conduction for Eu5−yLayIn2.2Sb6 (y ≥ 0.04). Meanwhile, the thermal conductivity of Eu5−yLayIn2.2Sb6 reduces from 0.90 W/mK to 0.72 W/mK at 583 K derived from the La doping-induced disorder. The maximum thermoelectric figure of merit zT = 0.13 was obtained. This work firstly realizes the n-type conduction in Eu5In2Sb6, which sheds light on the strategy to synthesize n-type Zintl thermoelectric materials and promotes the practical applications of Zintl thermoelectric devices. Full article
(This article belongs to the Special Issue Electroceramic Materials)
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Open AccessArticle
Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics
Materials 2018, 11(10), 2000; https://doi.org/10.3390/ma11102000
Received: 18 September 2018 / Revised: 3 October 2018 / Accepted: 9 October 2018 / Published: 16 October 2018
Cited by 1 | PDF Full-text (3843 KB) | HTML Full-text | XML Full-text
Abstract
In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a [...] Read more.
In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a key factor in affecting the fracture characteristics of GaN ceramics. The stress, electric displacement, and electric current intensity factors were numerically calculated and then a set of empirical formulae was obtained. By fitting the experimental data, a fracture criterion under combined mechanical and electrical loading was obtained in the form of an ellipsoid function of intensity factors. Such a fracture criterion can be extended to predict the failure behavior of other piezoelectric semiconductors or devices with a crack, which are useful in their reliability design and applications. Full article
(This article belongs to the Special Issue Electroceramic Materials)
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Open AccessArticle
Reliability of X7R Multilayer Ceramic Capacitors During High Accelerated Life Testing (HALT)
Materials 2018, 11(10), 1900; https://doi.org/10.3390/ma11101900
Received: 19 September 2018 / Revised: 1 October 2018 / Accepted: 3 October 2018 / Published: 4 October 2018
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Abstract
Multilayer ceramic capacitors (MLCC) are essential components for determining the reliability of electronic components in terms of time to failure. It is known that the reliability of MLCCs depends on their composition, processing, and operating conditions. In this present work, we analyzed the [...] Read more.
Multilayer ceramic capacitors (MLCC) are essential components for determining the reliability of electronic components in terms of time to failure. It is known that the reliability of MLCCs depends on their composition, processing, and operating conditions. In this present work, we analyzed the lifetime of three similar X7R type MLCCs based on BaTiO3 by conducting High Accelerated Life Tests (HALT) at temperatures up to 200 °C at 400 V and 600 V. The results were adjusted to an Arrhenius equation, which is a function of the activation energy (Ea) and a voltage stress exponent (n), in order to predict their time to failure. The values of Ea are in the range of 1–1.45 eV, which has been reported for the thermal failure and dielectric wear out of BaTiO3-based dielectric capacitors. The stress voltage exponent value was in the range of 4–5. Although the Ea can be associated with a failure mechanism, n only gives an indication of the effect of voltage in the tests. It was possible to associate those values with each type of tested MLCC so that their expected life could be estimated in the range of 400–600 V. Full article
(This article belongs to the Special Issue Electroceramic Materials)
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