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Novel Functional Crystal Materials for Lasers and Optoelectronic Devices

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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (20 December 2022) | Viewed by 3100

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Special Issue Editors

Prof. Dr. Baitao Zhang

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Guest Editor

Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
Interests: laser or nonlinear crystals; ultrafast lasers; infrared lasers; optical properties of 2D materials

Prof. Dr. Chaokuei Lee

E-Mail Website
Guest Editor

Department of Photonics, National Sun Yat-Sen University, 70, Lienhei Road, Kaohsiung, Taiwan
Interests: THz photonics; two-D material; quantum electronics; Si photonics

Special Issue Information

Dear Colleagues,

Lasing and optoelectronic applications have spread to and greatly influenced various aspects of human life. One generation of materials, one generation of devices. Recent advances in the growth and fabrication of functional crystal materials greatly promote the development of lasers and optoelectronic devices. Based on the bulk laser and nonlinear crystals and fibers, lasers (from the view of state of gain medium, including but not limited solid-state lasers, fiber lasers, semiconductor lasers, molecular lasers, and even nano-lasers, etc.) with output power up to tens of mega-watts, pulse duration as short as in scale of femtoseconds and even attoseconds, single pulse peak power as high as tens of peta-watts, wavelength from violet to mid-infrared and terahertz, have been developed and widely applied in the fields of extreme scientific research, medicine, industry, military, and so on. With novel low-dimensional function materials, including zero-dimensional (0D), one-dimensional (1D), and two-dimensional materials (2D), the flexible, implantable, stretchable, wearable, portable, and cost-effective optoelectronic and photonic devices with outstanding performances have been realized. Besides, the third-generation semiconductors with the representative of gallium nitride (GaN), silicon carbide (SiC) and diamond exhibit various incomparable advantages compared to silicon-based materials and are hopeful to be a prospective field to enhance the level present semiconductors in switching power supplies, RF areas, 5G base stations, and high-power lasers.

We believe that the further development of lasers and optoelectronic devices will, to a large extent, depend on the performance of the materials employed and the innovations in novel functional materials. Therefore, this Special Issue is mainly collecting the latest original research articles, communications, and review articles in the fields of novel functional crystal materials including laser crystals, nonlinear crystals, semiconductors, and low-dimensional materials, as well as their applications.

Prof. Dr. Baitao Zhang
Prof. Dr. Chaokuei Lee
Guest Editors

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Keywords

novel laser crystals
novel nonlinear crystals
novel semiconductor materials
nanocrystals and applications
mid-infrared lasers
ultrafast lasers
novel optoelectronic materials and devices
optoelectronic properties of low-dimensional materials
optical modulation and switch
optical sensing and detecting

Published Papers (2 papers)

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Research

10 pages, 3359 KiB

Open AccessArticle

X-ray-Induced Scintillation Properties of Nd-Doped Bi₄Si₃O₁₂ Crystals in Visible and Near-Infrared Regions

by Kensei Ichiba, Kai Okazaki, Yuma Takebuchi, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi and Takayuki Yanagida

Materials 2022, 15(24), 8784; https://doi.org/10.3390/ma15248784 - 8 Dec 2022

Cited by 10 | Viewed by 1327

Abstract

Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi₄Si₃O₁₂ (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p–6s transitions of Bi³⁺ ions. In addition, the Nd-doped samples had emission peaks due to the 4f–4f transitions of Nd³⁺ ions as well. The PL quantum yield of the 0.5, 1.0, and 2.0% Nd-doped samples in the near-infrared range were 67.9, 73.0, and 56.6%, respectively. Regarding X-ray-induced scintillation properties, all samples showed emission properties similar to PL. Afterglow levels at 20 ms after X-ray irradiation of the undoped, 0.5, 1.0, and 2.0% Nd-doped samples were 192.3, 205.9, 228.2, and 315.4 ppm, respectively. Dose rate response functions had good linearity from 0.006 to 60 Gy/h for the 1.0% Nd-doped BSO sample and from 0.03 to 60 Gy/h for the other samples. Full article

(This article belongs to the Special Issue Novel Functional Crystal Materials for Lasers and Optoelectronic Devices)

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15 pages, 5455 KiB

Open AccessArticle

Mid-Infrared Laser Generation of Zn_1−xMn_xSe and Zn_1−xMg_xSe (x ≈ 0.3) Single Crystals Co-Doped by Cr²⁺ and Fe²⁺ Ions—Comparison of Different Excitation Wavelengths

by Adam Říha, Helena Jelínková, Maxim E. Doroshenko, Michal Jelínek, Jan Šulc, Michal Němec, David Vyhlídal and Nazar O. Kovalenko

Materials 2022, 15(15), 5277; https://doi.org/10.3390/ma15155277 - 30 Jul 2022

Cited by 4 | Viewed by 1291

Abstract

Two different mid-infrared (mid-IR) solid-state crystalline laser active media of Cr

^{2 +}

, Fe

^{2 +}

:Zn

_{1 - x}

_{x}

Se and Cr

^{2 +}

, Fe

^{2 +}

:Zn

_{1 - x}

_{x}

Se with similar amounts of [...] Read more.

Two different mid-infrared (mid-IR) solid-state crystalline laser active media of Cr

^{2 +}

, Fe

^{2 +}

:Zn

_{1 - x}

_{x}

Se and Cr

^{2 +}

, Fe

^{2 +}

:Zn

_{1 - x}

_{x}

Se with similar amounts of manganese or magnesium ions of x ≈ 0.3 were investigated at cryogenic temperatures for three different excitation wavelengths: Q-switched Er:YLF laser at the wavelength of 1.73

μ

m, Q-switched Er:YAG laser at 2.94

μ

m, and the gain-switched Fe:ZnSe laser operated at a liquid nitrogen temperature of 78 K at ∼4.05

μ

m. The temperature dependence of spectral and laser characteristics was measured. Depending on the excitation wavelength and the selected output coupler, both laser systems were able to generate radiation by Cr

^{2 +}

or by Fe

^{2 +}

ions under direct excitation or indirectly by the Cr

^{2 +}

→ Fe

^{2 +}

energy transfer mechanism. Laser generation of Fe

^{2 +}

ions in Cr

^{2 +}

, Fe

^{2 +}

:Zn

_{1 - x}

_{x}

Se and Cr

^{2 +}

, Fe

^{2 +}

:Zn

_{1 - x}

_{x}

Se (x ≈ 0.3) crystals at the wavelengths of ∼4.4 and ∼4.8

μ

m at a temperature of 78 K was achieved, respectively. The excitation of Fe

^{2 +}

ions in both samples by direct 2.94

μ

m as well as ∼4.05

μ

m radiation or indirectly via the Cr

^{2 +}

→ Fe

^{2 +}

ions’ energy transfer-based mechanism by 1.73

μ

m radiation was demonstrated. Based on the obtained results, the possibility of developing novel coherent laser systems in mid-IR regions (∼2.3–2.5 and ∼4.4–4.9

μ

m) based on A

^{II}

^{VI}

matrices was presented. Full article

(This article belongs to the Special Issue Novel Functional Crystal Materials for Lasers and Optoelectronic Devices)

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