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Thin Films, Nanostructures and Devices for Optoelectronics Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: closed (20 April 2024) | Viewed by 1229

Special Issue Editors


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Guest Editor
Faculty of Physics, Alexandru Ioan Cuza University, 700506 Iasi, Romania
Interests: physics of advanced materials–nanoparticle synthesis; thin film deposition (sputtering, thermal vacuum deposition, spin coating); characterization (XRD, XPS, UV-Vis, FTIR, EPR) transport phenomena; functional properties (electrical properties, effect hall, optical properties, magnetic properties, sensing properties); advanced applications
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Guest Editor
Materials Design Center, Research Institute of KUT, Kochi University of Technology, Kochi 782-8502, Japan
Interests: condensed matter physics; film growth technology; solid state crystallization; characterization; first-principles calculation of wideband-gap semiconductors; induced oxide-specific function generation; tailored functional oxide (T-FOX) films; light emitting diodes (LEDs) in the ultraviolet wavelength region; highly transparent conductive oxides (TCO) electrodes for use in flat panel display; LCD TV and in solar cells; IR-plasmonic applications; gas (H2, CO) sensors; antibacterial materials
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Nanotechnology Department Environmental Studies and Research Institute, University of Sadat City, Sadat City P.O. Box 32879, Egypt
Interests: nanoparticles; solar cells; environmental applications; photocatalysis; photobiogas; thin films; self-cleaning surfaces

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Guest Editor
Department of Physics, The American University in Cairo, New Cairo 11835, Egypt
Interests: nanophotonics; nanophysics; silicon photonics; solar energy; computational electromagn
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Optoelectronics is an emerging technology field that includes image pick-up devices, LEDs and elements, information displays, optical storage, remote sensing systems, and optical communication systems. Optoelectronics significantly contributes to the development of the information industry, and to the medical, communications, aerospace, and defense sectors.

Because the fundamental characteristics of optoelectronic devices depend on the active semiconductors, and optionally on dopants, substantial efforts are devoted to developing various semiconductors, dopants, and synthesis procedures to obtain the efficient emission or detection of photons.

For this purpose, understanding the physical mechanisms that determine the optoelectronic properties of high-performance materials is mandatory. If the photoinduced processes and electronic properties are important for optoelectronic applications that rely on charge carrier photogeneration, the capabilities of various experimental techniques used for materials characterization are important for the device’s performance.

This Special Issue is focused on all types of materials (inorganic, organic, hybrid, thin films, artificial structures, nanocomposites, nanostructures) and focuses on (but is not limited to) the following topics:

- Processing methods and technologies for thin films, nanostructures, and devices for optoelectronics;

- Structural and functional characterization studies;

- Theoretical models and simulations for material electronic structures, and for phenomena observed in materials and devices;

- Optoelectronic and photonic device applications.

This Special Issue will include both reviews and regular research papers that include theories and experiments on materials with optoelectronic properties, on materials processing and characterization, and on all types of interactions and phenomena that explain the optoelectronic and photonic properties of materials and devices.

Prof. Dr. Felicia Iacomi
Prof. Dr. Tetsuya Yamamoto
Prof. Dr. Hoda Hafez
Prof. Dr. Mohamed Swillam
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin films
  • nanostructures
  • processing techniques
  • characterization techniques
  • theoretical models and simulations
  • optoelectronics applications

Published Papers (2 papers)

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Research

12 pages, 4316 KiB  
Article
Hysteresis-Free and Bias-Stable Organic Transistors Fabricated by Dip-Coating with a Vertical-Phase-Separation Structure
by Bingxi Wang, Xiaowen Yin, Shuwen Yu and Haibo Wang
Materials 2024, 17(7), 1465; https://doi.org/10.3390/ma17071465 - 22 Mar 2024
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Abstract
The morphology of organic films plays a pivotal role in determining the performance of transistor devices. While the dip-coating technique is capable of producing highly oriented organic films, it often encounters challenges such as limited coverage and the presence of defects in gaps [...] Read more.
The morphology of organic films plays a pivotal role in determining the performance of transistor devices. While the dip-coating technique is capable of producing highly oriented organic films, it often encounters challenges such as limited coverage and the presence of defects in gaps between strips, adversely affecting device performance. In this study, we address these challenges by increasing solution viscosity through the incorporation of a substantial proportion of dielectric polymers, thereby enhancing the participation of additional molecules during the film formation process when pulled up. This method produces continuous and oriented organic films with a notable absence of gaps, significantly improving the carrier mobility of transistor devices by more than twofold. Importantly, the fabricated devices exhibit remarkable reliability, showing no hysteresis even after 200 cycles of measurement. Furthermore, the current and threshold voltages of the devices demonstrate exceptional stability, maintaining steady after 10,000 s of bias measurement. This approach provides a solution for the cost-effective and large-scale production of organic transistors, contributing significantly to the advancement of organic electronics. Full article
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16 pages, 9162 KiB  
Article
Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis
by Meng-Ting Tsai, Yi-Chen Lee, Yung-Mei Lin, Vincent K. S. Hsiao and Chih-Chien Chu
Materials 2024, 17(5), 989; https://doi.org/10.3390/ma17050989 - 21 Feb 2024
Viewed by 442
Abstract
Porous silicon (PSi) has promising applications in optoelectronic devices due to its efficient photoluminescence (PL). This study systematically investigates the effects of various organic solvents and their concentrations during electrochemical etching on the resulting PL and surface morphology of PSi. Ethanol, n-butanol, ethylene [...] Read more.
Porous silicon (PSi) has promising applications in optoelectronic devices due to its efficient photoluminescence (PL). This study systematically investigates the effects of various organic solvents and their concentrations during electrochemical etching on the resulting PL and surface morphology of PSi. Ethanol, n-butanol, ethylene glycol (EG) and N,N-dimethylformamide (DMF) were employed as solvents in hydrofluoric acid (HF)-based silicon etching. The PL peak position exhibited progressive blue-shifting with increasing ethanol and EG concentrations, accompanied by reductions in the secondary peak intensity and emission linewidth. Comparatively, changes in n-butanol concentration only slightly impacted the main PL peak position. Additionally, distinct morphological transitions were observed for different solvents, with ethanol and n-butanol facilitating uniform single-layer porous structures at higher concentrations in contrast to the excessive etching caused by EG and DMF resulting in PL quenching. These results highlight the complex interdependencies between solvent parameters such as polarity, volatility and viscosity in modulating PSi properties through their influence on surface wetting, diffusion and etching kinetics. The findings provide meaningful guidelines for selecting suitable solvent conditions to tune PSi characteristics for optimized device performance. Full article
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