Functional Oxides and Hybrid Materials for Memristive Devices
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: 20 April 2026 | Viewed by 17
Special Issue Editors
2. Department of Physics, Virginia Wesleyan University, Virginia Beach, VA, USA
Interests: nanomaterials; oxides; dielectrics; thin films and nanotechnology; electrical characterization; memristor; device physics
2. EngeniusMicro, LLC, Huntsville, AL, USA
Interests: carbon nanotubes; solar energy; nanomaterials; optoelectronics; interface heat transport
Special Issue Information
Dear Colleagues,
As emerging technologies demand faster, more efficient, and intelligent data processing, traditional memory architectures, such as flash and DRAM, face inherent limitations in scalability, speed, and power consumption. Memristive technologies, particularly resistive switching memory (ReRAM), have garnered significant attention as promising alternatives for both nonvolatile memory (NVM) and neuromorphic computing systems.
This Special Issue will focus on the critical role that innovations in materials science will play in advancing memristor performance and in enabling new device functionalities. Transition metal oxides (MOs) and composite heterostructures—such as HfO2, Al2O3, TiO2, and their bilayer or doped variants—have shown significant potential due to their tunable electrical properties, high endurance, multilevel conductance states, and analog switching characteristics that mimic biological synapses.
Based on our research experience in this field—including publications in the Journal of Materials Chemistry C, ACS Electronic Materials, Applied Physics Letters, etc.—we have seen firsthand how advances in material design, interface control, and defect engineering can substantially enhance device reliability, retention, and scalability.
This Special Issue seeks contributions that bridge innovation in material and device performance in memristive systems. Emphasis is placed on experimental and theoretical studies linking material properties to switching behavior, endurance, retention, and scalability in memory and neuromorphic circuits. Submissions that explore device engineering aspects, including switching layer materials, interface control, defect dynamics, and multifunctional materials for adaptive or reconfigurable devices, are encouraged.
In addition, this Special Issue seeks original articles that focus on novel switching mechanisms, performance reliability, and the real-world integration of advanced materials in memory and neuromorphic architectures. We anticipate that this collection will not only advance the scientific understanding of memristive materials, but also foster collaborations that will drive the future of intelligent computing technologies.
Dr. Pradip Basnet
Guest Editor
Dr. Erik Anderson
Guest Editor Assistant
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- nanomaterials
- metal oxides
- dielectrics
- memristor
- interface electronic transport
- device physics
Benefits of Publishing in a Special Issue
- Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
- Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
- Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
- External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
- Reprint: MDPI Books provides the opportunity to republish successful Special Issues in book format, both online and in print.
Further information on MDPI's Special Issue policies can be found here.
