Reprint
Nanowire Field-Effect Transistor (FET)
Edited by
February 2021
96 pages
- ISBN978-3-03936-208-0 (Hardback)
- ISBN978-3-03936-209-7 (PDF)
This book is a reprint of the Special Issue Nanowire Field-Effect Transistor (FET) that was published in
Chemistry & Materials Science
Engineering
Physical Sciences
Summary
In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
Format
- Hardback
License
© 2022 by the authors; CC BY-NC-ND license
Keywords
random dopant; drift-diffusion; variability; device simulation; nanodevice; screening; Coulomb interaction; III-V; TASE; MOSFETs; Integration; nanowire field-effect transistors; silicon nanomaterials; charge transport; one-dimensional multi-subband scattering models; Kubo–Greenwood formalism; schrödinger-poisson solvers; DC and AC characteristic fluctuations; gate-all-around; nanowire; MOSFETs; work function fluctuation; aspect ratio of channel cross-section; timing fluctuation; noise margin fluctuation; power fluctuation; CMOS circuit; statistical device simulation; nanowire field-effect transistors; variability effects; Monte Carlo; Schrödinger based quantum corrections; drift-diffusion; quantum modeling; nonequilibrium Green’s function; nanowire transistor; electron–phonon interaction; phonon–phonon interaction; self-consistent Born approximation; lowest order approximation; Padé approximants; Richardson extrapolation; ZnO; nanowire; charge transport; field effect transistor; conduction mechanism; nanowire field-effect transistors; metal gate; material properties; fabrication; modelling; variability; nanojunction; constriction; quantum electron transport; quantum confinement; dimensionality reduction; stochastic Schrödinger equations; geometric correlations; silicon nanowires; nano-transistors; quantum transport; hot electrons; self-cooling; nano-cooling; thermoelectricity; heat equation; non-equilibrium Green functions; power dissipation