Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
Sadi, T.; Medina-Bailon, C.; Nedjalkov, M.; Lee, J.; Badami, O.; Berrada, S.; Carrillo-Nunez, H.; Georgiev, V.; Selberherr, S.; Asenov, A. Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors. Materials 2019, 12, 124. https://doi.org/10.3390/ma12010124
Sadi T, Medina-Bailon C, Nedjalkov M, Lee J, Badami O, Berrada S, Carrillo-Nunez H, Georgiev V, Selberherr S, Asenov A. Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors. Materials. 2019; 12(1):124. https://doi.org/10.3390/ma12010124
Chicago/Turabian StyleSadi, Toufik, Cristina Medina-Bailon, Mihail Nedjalkov, Jaehyun Lee, Oves Badami, Salim Berrada, Hamilton Carrillo-Nunez, Vihar Georgiev, Siegfried Selberherr, and Asen Asenov. 2019. "Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors" Materials 12, no. 1: 124. https://doi.org/10.3390/ma12010124