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Piezoelectrics and Ferroelectrics for End Users

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 March 2025 | Viewed by 5864

Special Issue Editors


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Guest Editor
Instituto de Ciencia de Materiales de Madrid, CSIC, c/ Sor Juana Inés de la Cruz, 3, 24049 Madrid, Spain
Interests: piezoceramics; ferroelectrics; processing; characterization
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Guest Editor
Department of Chemical, Physics, Mathematics and Natural Science, University of Sassari, Via Vienna 2, I-07100 Sassari, Italy
Interests: piezoceramics; structural characterization; wet chemistry; processing
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Guest Editor
James Watt School of Engineering, University of Glasgow, James Watt South Building, Glasgow, UK
Interests: piezoelectric crystals; textured ceramics; ultrasonic testing of materials; material characterization

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Guest Editor Assistant
Thales UK, 350 Longwater Avenue, Reading, Berkshire, UK
Interests: piezoceramics; textured ceramics; single crystals; electromechanical properties; underwater transducers

Special Issue Information

Dear Colleagues,

The study of ferroelectric and piezoelectric materials based on these constitutes a consolidated, but still challenging, field of research activities. Their multifunctionality has resulted in numerous applications as sensors, actuators and transducers, covering a well-known range of human activities (communications, transport, health, manufacture and quality control). Emerging applications in energy (energy storage, piezoelectric harvesting, photovoltaic, thermoelectricity...) are receiving increasing interest nowadays. Increasing effort has been devoted to obtaining high sensitivity and lead-free composition materials since the turn of the century. This was driven by the toxicity of lead oxide, the main component of commercial ceramics, and now by directives for environmental protection, demanding the elimination of lead from piezoelectric components in devices. This demand must be accompanied by the development of green methods of processing. While being a key topic for the performance and life time of these materials, the mechanical properties of ferro-piezoelectric ceramics are difficult to control, and this opens a so far poorly explored field of activities.

Manuscripts and review papers on the topics of “Piezoelectrics and Ferroelectrics for End Users” are welcomed. S. Cochran is the Chairman and L. Stoica and S. Garroni are Co-Chairs of the Conference “ELECTROCERAMICS FOR END USERS XII—PIEZO2023 WITH FERROELECTRICS UK”, 5–8 November 2023, Glasgow University, Glasgow, UK. L. Pardo and S. Garroni are members of the Organization of the European Institute of Piezoelectric Materials and Devices that co-organizes the Conference. Attendees are encouraged to publish the work presented at the event in this Special Issue (Email: [email protected]).

Prof. Dr. Lorena Pardo
Dr. Sebastiano Garroni
Prof. Dr. Sandy Cochran
Guest Editors

Dr. Laura Stoica
Guest Editor Assistant

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Keywords

  • piezoelectrics, pyroelectrics, ferroelectrics, relaxors, tuneable materials
  • ceramics, single crystals, thick and thin films, polymers and composites
  • lead-free materials
  • materials processing including low-temperature sintering techniques and chemical routes avoiding toxic precursors
  • raw materials avoiding environmentally aggressive conditions
  • advanced and innovative characterization of structural, electrical, mechanical, thermal and optical properties of piezoelectrics and ferroelectrics
  • materials and devices for sensors, acoustic transducers and medical imaging
  • materials and devices for energy conversion, energy harvesting, cooling and energy storage
  • piezoelectrics for actuators
  • multiferroics, electrocalorics, magnetoelectrics, photovoltaics, thermoelectrics and photo-ferroelectrics
  • theory and modelling of piezoelectrics and ferroelectrics
  • thermoelectrics and photovoltaics

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Related Special Issue

Published Papers (5 papers)

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Research

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11 pages, 597 KiB  
Article
Magnetic Field Effect on the Electric and Dielectric Properties of the Linear Magnetoelectric Compound Co4Nb2O9
by Iliana N. Apostolova, Angel T. Apostolov and Julia M. Wesselinowa
Materials 2024, 17(23), 5719; https://doi.org/10.3390/ma17235719 - 22 Nov 2024
Viewed by 417
Abstract
Using Green’s function theory and a microscopic model, the multiferroic properties of Co4Nb2O9 are investigated theoretically. There are some discrepancies in the discussion of the electric and dielectric behavior of CNO with and without external magnetic fields. We [...] Read more.
Using Green’s function theory and a microscopic model, the multiferroic properties of Co4Nb2O9 are investigated theoretically. There are some discrepancies in the discussion of the electric and dielectric behavior of CNO with and without external magnetic fields. We try to clarify them. It is observed that the polarization and the dielectric constant do not show a peak at the antiferromagnetic phase transition temperature TN without an external magnetic field h. But applying h, there appears a peak around the Neel temperature TN, which increases with increasing h and then shifts to lower temperatures. The magneto-dielectric coefficient MD(T,h) is also calculated. Moreover, the magnetization rises with an increasing external electric field below the Neel temperature. This shows strong magnetoelectric coupling in Co4Nb2O9. The obtained results are compared with the existing experimental data. There is a good qualitative agreement. Full article
(This article belongs to the Special Issue Piezoelectrics and Ferroelectrics for End Users)
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19 pages, 6696 KiB  
Article
BaHf0.05Ti0.95O3 Ceramics from Sol–Gel and Solid-State Processes: Application to the Modelling of Piezoelectric Energy Harvesters
by Damien Brault, Philippe Boy, Franck Levassort, Guylaine Poulin-Vittrant, Claire Bantignies, Thien Hoang and Maxime Bavencoffe
Materials 2024, 17(7), 1508; https://doi.org/10.3390/ma17071508 - 26 Mar 2024
Viewed by 1063
Abstract
A typical piezoelectric energy harvester is a bimorph cantilever with two layers of piezoelectric material on both sides of a flexible substrate. Piezoelectric layers of lead-based materials, typically lead zirconate titanate, have been mainly used due to their outstanding piezoelectric properties. However, due [...] Read more.
A typical piezoelectric energy harvester is a bimorph cantilever with two layers of piezoelectric material on both sides of a flexible substrate. Piezoelectric layers of lead-based materials, typically lead zirconate titanate, have been mainly used due to their outstanding piezoelectric properties. However, due to lead toxicity and environmental problems, there is a need to replace them with environmentally benign materials. Here, our main efforts were focused on the preparation of hafnium-doped barium titanate (BaHfxTi1−xO3; BHT) sol–gel materials. The original process developed makes it possible to obtain a highly concentrated sol without strong organic complexing agents. Sol aging and concentration can be controlled to obtain a time-stable sol for a few months at room temperature, with desired viscosity and colloidal sizes. Densified bulk materials obtained from this optimized sol are compared with a solid-state synthesis, and both show good electromechanical properties: their thickness coupling factor kt values are around 53% and 47%, respectively, and their converse piezoelectric coefficient d33 values are around 420 and 330 pm/V, respectively. According to the electromechanical properties, the theoretical behavior in a bimorph configuration can be simulated to predict the resonance and anti-resonance frequencies and the corresponding output power values to help to design the final device. In the present case, the bimorph configuration based on BHT sol–gel material is designed to harvest ambient vibrations at low frequency (<200 Hz). It gives a maximum normalized volumetric power density of 0.03 µW/mm3/Hz/g2 at 154 Hz under an acceleration of 0.05 m/s2. Full article
(This article belongs to the Special Issue Piezoelectrics and Ferroelectrics for End Users)
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14 pages, 5691 KiB  
Article
Influence of Grain-Growth Inhibitors on Modified (Ba,Sr)(Sn,Ti)O3 for Electrocaloric Application
by Zhenglyu Li, Christian Molin and Sylvia E. Gebhardt
Materials 2024, 17(5), 1036; https://doi.org/10.3390/ma17051036 - 23 Feb 2024
Cited by 1 | Viewed by 924
Abstract
The paper reports on effect of grain-growth inhibitors MgO, Y2O3 and MnCO3 as well as Ca modification on the microstructure, dielectric, ferroelectric and electrocaloric (EC) properties of Ba0.82Sr0.18Sn0.065Ti0.935O3 (BSSnT). Furthermore, [...] Read more.
The paper reports on effect of grain-growth inhibitors MgO, Y2O3 and MnCO3 as well as Ca modification on the microstructure, dielectric, ferroelectric and electrocaloric (EC) properties of Ba0.82Sr0.18Sn0.065Ti0.935O3 (BSSnT). Furthermore, the effects of the sintering time and temperature on the microstructure and the electrical properties of the most promising material system Ba0.62Ca0.20Sr0.18Sn0.065Ti0.935O3 (BCSSnT-20) are investigated. Additions of MgO (xMgO = 1%), Y2O3 (xY2O3 = 0.25%) and MnCO3 (xMnCO3 = 1%) significantly decreased the mean grain size of BSSnT to 0.4 µm, 0.8 µm and 0.4 µm, respectively. Ba0.62Ca0.20Sr0.18Sn0.065Ti0.935O3 (BCSSnT-20) gained a homogeneous fine-grained microstructure with an average grain size of 1.5 µm, leading to a maximum electrocaloric temperature change |ΔTEC| of 0.49 K at 40 °C with a broad peak of |ΔTEC| > 0.33 K in the temperature range from 10 °C to 75 °C under an electric field change of 5 V µm−1. By increasing the sintering temperature of BCSSnT-20 from 1350 °C to 1425 °C, the grain size increased from 1.5 µm to 7.3 µm and the maximum electrocaloric temperature change |ΔTEC| increased from 0.15 K at 35 °C to 0.37 K at 20 °C under an electric field change of 2 V µm−1. Our results show that under all investigated material systems, BCSSnT-20 is the most promising candidate for future application in multilayer ceramic (MLC) components for EC cooling devices. Full article
(This article belongs to the Special Issue Piezoelectrics and Ferroelectrics for End Users)
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17 pages, 3714 KiB  
Article
Tuning Nb Solubility, Electrical Properties, and Imprint through PbO Stoichiometry in PZT Films
by Betul Akkopru-Akgun and Susan Trolier-McKinstry
Materials 2023, 16(11), 3970; https://doi.org/10.3390/ma16113970 - 25 May 2023
Cited by 1 | Viewed by 1453
Abstract
Lead zirconate titanate (PZT) films with high Nb concentrations (6–13 mol%) were grown by chemical solution deposition. In concentrations up to 8 mol% Nb, the films self-compensate the stoichiometry; single phase films were grown from precursor solutions with 10 mol% PbO excess. Higher [...] Read more.
Lead zirconate titanate (PZT) films with high Nb concentrations (6–13 mol%) were grown by chemical solution deposition. In concentrations up to 8 mol% Nb, the films self-compensate the stoichiometry; single phase films were grown from precursor solutions with 10 mol% PbO excess. Higher Nb concentrations induced multi-phase films unless the amount of excess PbO in the precursor solution was reduced. Phase pure perovskite films were grown with 13 mol% excess Nb with the addition of 6 mol% PbO. Charge compensation was achieved by creating lead vacancies when decreasing excess PbO level; using Kroger-Vink notation, NbTi are ionically compensated by VPb to maintain charge neutrality in heavily Nb-doped PZT films. With Nb doping, films showed suppressed {100} orientation, the Curie temperature decreased, and the maximum in the relative permittivity at the phase transition broadened. The dielectric and piezoelectric properties were dramatically degraded due to increased quantity of the non-polar pyrochlore phase in multi-phase films; εr reduced from 1360 ± 8 to 940 ± 6, and the remanent d33,f value decreased from 112 to 42 pm/V when increasing the Nb concentration from 6 to 13 mol%. Property deterioration was corrected by decreasing the PbO level to 6 mol%; phase pure perovskite films were attained. εr and the remanent d33,f increased to 1330 ± 9 and 106 ± 4 pm/V, respectively. There was no discernable difference in the level of self-imprint in phase pure PZT films with Nb doping. However, the magnitude of the internal field after thermal poling at 150 °C increased significantly; the level of imprint was 30 kV/cm and 11.5 kV/cm in phase pure 6 mol% and 13 mol% Nb-doped films, respectively. The absence of mobile VO, coupled with the immobile VPb in 13 mol% Nb-doped PZT films, leads to lower internal field formation upon thermal poling. For 6 mol% Nb-doped PZT films, the internal field formation was primarily governed by (1) the alignment of (VPbVO )x and (2) the injection and subsequent electron trapping by Ti4+. For 13 mol% Nb-doped PZT films, hole migration between VPb controlled internal field formation upon thermal poling. Full article
(This article belongs to the Special Issue Piezoelectrics and Ferroelectrics for End Users)
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Review

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16 pages, 1564 KiB  
Review
Piezoelectric Charge Coefficient of Halide Perovskites
by Raja Sekhar Muddam, Joseph Sinclair and Lethy Krishnan Jagadamma
Materials 2024, 17(13), 3083; https://doi.org/10.3390/ma17133083 - 23 Jun 2024
Viewed by 1134
Abstract
Halide perovskites are an emerging family of piezoelectric and ferroelectric materials. These materials can exist in bulk, single-crystal, and thin-film forms. In this article, we review the piezoelectric charge coefficient (dij) of single crystals, thin films, and dimension-tuned halide perovskites based [...] Read more.
Halide perovskites are an emerging family of piezoelectric and ferroelectric materials. These materials can exist in bulk, single-crystal, and thin-film forms. In this article, we review the piezoelectric charge coefficient (dij) of single crystals, thin films, and dimension-tuned halide perovskites based on different measurement methods. Our study finds that the (dij) coefficient of the bulk and single-crystal samples is mainly measured using the quasi-static (Berlincourt) method, though the piezoforce microscopy (PFM) method is also heavily used. In the case of thin-film samples, the (dij) coefficient is dominantly measured by the PFM technique. The reported values of dij coefficients of halide perovskites are comparable and even better in some cases compared to existing materials such as PZT and PVDF. Finally, we discuss the promising emergence of quasi-static methods for thin-film samples as well. Full article
(This article belongs to the Special Issue Piezoelectrics and Ferroelectrics for End Users)
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