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The Optical, Ferroelectric and Dielectric Properties of Thin Films

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: 20 June 2025 | Viewed by 812

Special Issue Editors


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Guest Editor
Departamento de Física de Materiales, Centro de Investigación de Materiales Avanzados, Chihuahua 31136, México
Interests: optical; ceramics; semiconductors nanoparticles; thin films

E-Mail Website
Guest Editor
Departamento de Física de Materiales, Centro de Investigación de Materiales Avanzados, Chihuahua 31136, México
Interests: ferroelectric, piezoelectric and multiferroic thin films; X-ray diffraction; crystallography; sol-gel

E-Mail Website
Guest Editor
Departamento de Ingeniería y Química de Materiales, Centro de Investigación de Materiales Avanzados, Chihuahua 31136, México
Interests: nanostructured materials; catalysis; photocatalysis; artificial photosynthesis

Special Issue Information

Dear Colleagues,

We are pleased to announce a Special Issue entitled “The Optical, Ferroelectric and Dielectric Properties of Thin Films”.

The miniaturization of microelectronic devices is a challenge. Ferroelectric films are used in sensors, actuators, piezoelectric, and memories. At the nanometer scale, the aim of these films is to increase power and decrease leakage currents when thin films are polarized.

In thin optical films where the propagation of light depends on the polarization of light and control over the thickness and morphology of the films, the latter limits our ability to adjust the films’ optical response for the desired applications. Multiferroic thin films can possibly coexist with these properties in a single phase. Studies of multiferroics have led to the discovery of new materials and remarkable magnetoelectric phenomena.

In this Special Issue, we are interested in the properties of thin films such as the following:

  • Optics, Piezoelectricity, Ferroelectrics, Multiferroics, and Semiconductors;
  • The interaction between waves and microstructure, functionality, and novel synthesis techniques.

This Special Issue will be published under the journal Materials, which has an Impact Factor of 3.1 and a CiteScore of 5.8. The deadline for submissions is 20 June 2025.

We cordially invite you to submit your work for publication in this Special Issue.

Dr. Hilda Esperanza Esparza-Ponce
Dr. Armando Reyes Reyes-Rojas
Dr. Alfredo Aguilar-Elguézabal
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optical systems
  • ferroelectrics
  • semiconductors
  • dielectrics
  • piezoelectric
  • thin films

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Published Papers (2 papers)

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Research

9 pages, 2242 KiB  
Communication
Stability Improvement of Solution-Processed Metal Oxide Thin-Film Transistors Using Fluorine-Doped Zirconium Oxide Dielectric
by Haoxuan Xu, Bo Deng and Xinan Zhang
Materials 2025, 18(9), 1980; https://doi.org/10.3390/ma18091980 - 27 Apr 2025
Viewed by 137
Abstract
Solution-processed metal oxide dielectrics often result in unstable thin-film transistor (TFT) performance, hindering the development of next-generation metal oxide electronics. In this study, we prepared fluorine (F)-doped zirconium oxide (ZrO2) dielectric layers using a chemical solution method to construct TFTs. The [...] Read more.
Solution-processed metal oxide dielectrics often result in unstable thin-film transistor (TFT) performance, hindering the development of next-generation metal oxide electronics. In this study, we prepared fluorine (F)-doped zirconium oxide (ZrO2) dielectric layers using a chemical solution method to construct TFTs. The characterization by X-ray photoelectron spectroscopy (XPS) revealed that appropriate fluoride doping significantly reduces oxygen vacancies and the concentration of hydroxyl groups, thereby suppressing polarization processes. Subsequently, the electrical properties of Al/F:ZrO2/n++Si capacitors were evaluated, demonstrating that the optimized 10% F:ZrO2 dielectric exhibits a low leakage current density and stable capacitance across a wide frequency range. Indium zinc oxide (IZO) TFTs incorporating 10% F:ZrO2 dielectric layers were then fabricated. These devices displayed reliable electrical characteristics, including high mobility over a broad frequency range, reduced dual-sweep hysteresis, and excellent stability under positive-bias stress (PBS) after three months of aging. These findings indicate that the use of the fluorine-doped ZrO2 dielectric is a versatile strategy for achieving high-performance metal oxide thin-film electronics. Full article
(This article belongs to the Special Issue The Optical, Ferroelectric and Dielectric Properties of Thin Films)
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28 pages, 13218 KiB  
Article
Optothermal Properties of Donor–Acceptor Layers, Including PTB7, PTB7th, Y5, and Y6, for Organic Photovoltaic Cell Applications
by Gabriela Lewinska, Jarosław Kanak, Jerzy Sanetra and Konstanty W. Marszalek
Materials 2025, 18(8), 1841; https://doi.org/10.3390/ma18081841 - 17 Apr 2025
Viewed by 279
Abstract
This study addresses the development and optothermal analysis of donor–acceptor thin layers, including materials universally used in organic photovoltaic cells. This article presents the impact of temperature on the optical properties and morphology of thin films made from materials commonly used in organic [...] Read more.
This study addresses the development and optothermal analysis of donor–acceptor thin layers, including materials universally used in organic photovoltaic cells. This article presents the impact of temperature on the optical properties and morphology of thin films made from materials commonly used in organic solar cells. This research focused on two donor materials (PTB7 and PTB7th) and two non-fullerene acceptors (Y5 and Y6), individually and in binary combinations with PTB7 and PTB7th. This study employed various techniques, including UV–Vis spectroscopy, ellipsometry, and atomic force microscopy (AFM), to analyze changes in the absorption, refractive index, extinction coefficient, and morphology at temperatures ranging from 30 °C to 120 °C. This research shows reversible changes in thickness and absorption with temperature, but the extent of these changes differs between PTB7 and PTB7th. Y5 shows some reversible changes, while Y6 demonstrates greater instability and more permanent changes at higher temperatures. The enhanced thermal stability of binary mixtures compared to single-component materials was observed. Full article
(This article belongs to the Special Issue The Optical, Ferroelectric and Dielectric Properties of Thin Films)
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