Oxide Semiconductor Materials and Devices

Dear Colleagues,

Over the past few decades, oxide semiconductors have been successfully mass-produced for being used as driving transistors in display backplanes. Recently, their applications have expanded to include configurations where oxide semiconductors and silicon transistors are integrated into the same backplane circuitry for low-power operation (known as LTPO). Moreover, there is ongoing research to utilize the low leakage current of oxide semiconductors in various memory devices (such as DRAM and NAND), and efforts are being made to enhance the utilization of silicon chips by integrating oxide transistors monolithically in the BEOL area of silicon chips.

This Special Issue of Materials on “Oxide Semiconductor Materials and Devices” aims to present original research and comprehensive review articles on recent advances in all aspects of oxide semiconductor materials and devices. This includes topics such as deposition techniques for oxide semiconductors, characterization methods for oxide semiconductor materials, the electrical properties of oxide semiconductor transistors, and the applications of oxide semiconductors.

Potential topics include but are not limited to the following:

• Fabrication methods: sputter, ALD, CVD, solution,
• High mobility oxide semiconductor
• Instability issues of oxide semiconductor
• Scaling of oxide semiconductor transistors for high-resolution
• Novel, emerging applications of oxide semiconductor

Prof. Dr. Jiyoung Kim
Dr. Si Joon Kim
Dr. Jae Won Na
Guest Editors

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