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New Techniques for Preparing Thin Films: Characteristics and Further Developments
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New Techniques for Preparing Thin Films: Characteristics and Further Developments

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: 10 March 2026 | Viewed by 1543

Special Issue Editors

Dr. Peng Xiao

E-Mail Website
Guest Editor
Guangdong-HongKong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, China
Interests: printed electronics; new photoelectric materials and devices; flexible supercapacitors
Dr. Baiquan Liu

E-Mail Website
Guest Editor
School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Interests: organic light-emitting diodes; perovskite light-emitting diodes; quantum-dot light-emitting diodes; organic electronics; flexible; solution processesd; solar cells
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

New techniques for preparing thin films is of great significance in electronic devices, including thin-film transistors, sensors, organic/quantum light-emitting diodes. Emerging concepts, strategies, and techniques can benefit thin-film preparation, the understanding of thin-film science, the optimization of film morphologies, the exploration of film interfaces, the innovation of device architectures, and the investigation of working mechanisms. Moreover, theoretical simulations provide new insights into the intrinsic properties of thin-film devices, and may introduce the potential of further unexplored applications.

This Special Issue, enttiled “New Techniques for Preparing Thin Films: Characteristics and Further Developments”, aims to present the recent developments in the field of advanced micro/nano electronics, including novel concepts, fundamental research, and theoretical results. The scope of this research topic also includes the preparation, characterization, and application of various thin films. We welcome original research, reviews, mini-reviews, and perspective articles on themes including, but not limited to, the following:

  • New preparation techniques for thin film technology, such as inkjet printing;
  • Optical and electrical characteristics of thin-film devices;
  • Film morphology;
  • Interfacial and surface physics;
  • Applications of thin films in various fields, particularly for thin-film transistors and organic/quantum light-emitting diodes;
  • Working mechanisms of optoelectronic devices;
  • Theoretical modeling;
  • Challenges in the development of electronic devices.

Dr. Peng Xiao
Dr. Baiquan Liu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • printed electronics
  • flexible electronics
  • photoelectric detection
  • thin-film transistors
  • organic light-emitting diodes
  • quantum light-emitting diodes

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Published Papers (3 papers)

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Research

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12 pages, 2688 KiB  
Communication
Growth and Characterization of n-Type Hexagonal Ta2O5:W Films on Sapphire Substrates by MOCVD
by Xiaochen Ma, Yuanheng Li, Xuan Liu, Deqiang Chen, Yong Le and Biao Zhang
Materials 2025, 18(13), 3073; https://doi.org/10.3390/ma18133073 - 28 Jun 2025
Viewed by 145
Abstract
Tantalum oxide is a wide bandgap material commonly used as an insulating dielectric layer for devices. In this work, hexagonal Ta2O5 (δ-Ta2O5) films doped with tungsten (W) were deposited on α-Al2O [...] Read more.
Tantalum oxide is a wide bandgap material commonly used as an insulating dielectric layer for devices. In this work, hexagonal Ta2O5 (δ-Ta2O5) films doped with tungsten (W) were deposited on α-Al2O3 (0001) by metal–organic chemical vapor deposition (MOCVD). The effects of W doping on the structural, morphology, and photoelectrical properties of the obtained films were studied. The results showed that all W-doped films were n-type semiconductors. The XRD measurement result exhibited that the increase in the W doping concentration leads to the changes in the preferred growth crystal plane of the films from δ-Ta2O5 (101¯1) to (0001). The 1.5% W-doped film possessed the best crystal quality and conductivity. The Hall measurement showed that the minimum resistivity of the film was 2.68 × 104 Ω∙cm, and the maximum carrier concentration was 7.39 × 1014 cm3. With the increase in the W concentration, the surface roughness of the film increases, while the optical bandgap decreases. The optical band gap of the 1.5% W-doped film was 3.92 eV. The W doping mechanisms were discussed. Full article
(This article belongs to the Special Issue New Techniques for Preparing Thin Films: Characteristics and Further Developments)
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9 pages, 4243 KiB  
Article
Phase Evolution in Mn1.6Zn0.2Ni0.6Mg0.2Al0.4O4 High-Entropy Oxide Films by Heat Treatment
by Wei Ren, Xianhai Liu, Wenting Wu and Weili Wang
Materials 2024, 17(23), 5967; https://doi.org/10.3390/ma17235967 - 5 Dec 2024
Viewed by 714
Abstract
In this work, Mn-Zn-Ni-Mg-Al multi-layer films were annealed in air at different temperatures to form spinel-structured Mn1.6Zn0.2Ni0.6Mg0.2Al0.4O4 high-entropy oxide films. X-ray diffraction results demonstrate that the films possess a polycrystalline spinel phase [...] Read more.
In this work, Mn-Zn-Ni-Mg-Al multi-layer films were annealed in air at different temperatures to form spinel-structured Mn1.6Zn0.2Ni0.6Mg0.2Al0.4O4 high-entropy oxide films. X-ray diffraction results demonstrate that the films possess a polycrystalline spinel phase as well as impurity phases: when annealed at 650 °C and 750 °C, MnO2 and Al2O3 impurity phases exist; at 950 °C, an Al2O3 impurity phase exists. Only at 850 °C does a pure spinel phase exist. However, the film at 750 °C exhibits the best conductive behavior, which indicates that the impurity phases may not have to be removed to maintain the best electrical properties of the film. Full article
(This article belongs to the Special Issue New Techniques for Preparing Thin Films: Characteristics and Further Developments)
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Review

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48 pages, 6397 KiB  
Review
Advancements in Electrochromic Technology for Multifunctional Flexible Devices
by Alice Marciel, Joel Borges, Luiz Pereira, Rui F. Silva and Manuel Graça
Materials 2025, 18(13), 2964; https://doi.org/10.3390/ma18132964 - 23 Jun 2025
Viewed by 363
Abstract
The design and investigation of electrochromic devices have advanced significantly, including distinct applications such as self-charged smart windows, aerospace interactive windows, low power flexible and ecofriendly displays, automatic dimming rearview, wearable smart textiles, military and civilian camouflage systems, electrochromic sensors, among others. Although [...] Read more.
The design and investigation of electrochromic devices have advanced significantly, including distinct applications such as self-charged smart windows, aerospace interactive windows, low power flexible and ecofriendly displays, automatic dimming rearview, wearable smart textiles, military and civilian camouflage systems, electrochromic sensors, among others. Although significant progress has been made in related fields, achieving the full potential of electrochromic devices to meet the standards of maturity and practical applications remains a persistent challenge. Electrochromic devices are typically multilayered structures that can be designed as either rigid or flexible systems, depending on the type of substrate employed. Conventional electrochromic devices comprise layered structures that include transparent electrodes, electrochromic materials, ionic conductors, and ion storage materials. On the other hand, multifunctional systems integrate bifunctional materials or distinct functional layers to simultaneously achieve optical modulation and additional capabilities such as energy storage. The development of advanced materials, comprehensive electrochemical kinetic analysis, the optimization and advancement of process techniques and deposition methods, and innovative device designs are active areas of extensive global research. This review focuses on the recent advances in multifunctional electrochromic materials and devices with particular emphasis on the integration of electrochromic technology with other functional technologies. It further identifies current challenges, proposes potential solutions, and outlines future research directions focused on advancing this technology in both niche and scalable applications. Full article
(This article belongs to the Special Issue New Techniques for Preparing Thin Films: Characteristics and Further Developments)
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