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Advanced Electroceramics and Their Applications in Energy Harvesting, Conversion and Storage

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced and Functional Ceramics and Glasses".

Deadline for manuscript submissions: 20 May 2025 | Viewed by 1872

Special Issue Editors


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Guest Editor
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Interests: ferro-/piezoelectric materials and their application
School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an 710021, China
Interests: (anti)ferro-/piezoelectric materials and their application

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Guest Editor
Department of Chemistry, Simon Fraser University, Burnaby, BC V5A 1S6, Canada
Interests: solid state materials chemistry

Special Issue Information

Dear Colleagues,

The need for research on sustainable and efficient energy solutions has never been more pressing than today. Electroceramics, with their unique properties and versatile applications, have emerged as promising candidates in this endeavor. Examples include dielectric, piezoelectric, ferroelectric, and multiferroic materials, which exhibit remarkable capacitive, electromechanical, and magnetoelectric properties. In particular, ferro-/piezoelectric materials can efficiently convert mechanical energy into electrical energy and vice versa, making them ideal for energy harvesting and conversion applications. Multiferroic materials enable efficient energy conversion between magnetic and electrical energy due to the bidirectional coupling between magnetic and electric properties. Additionally, the ability to store and release electrical energy in dielectric materials makes them useful for energy storage devices. Intensive research has been carried out around the world to develop novel electroceramic materials, fabrication techniques, and device architectures to enhance energy density, efficiency, durability, and reliability, leading to significant progress in recent years. This Special Issue aims to showcase the latest advancements in this field, providing a platform for researchers to share their new insights, innovative methodologies, and latest findings. We welcome research papers or review articles that explore and discuss various aspects of advanced electroceramics, including but not limited to:

  1. Novel synthesis and fabrication techniques for advanced electroceramics;
  2. Structural characterization of advanced electroceramics;
  3. Physical and chemical properties of advanced electroceramics;
  4. Modelling and simulation of electroceramic materials and devices;
  5. Applications of electroceramics in energy harvesting, conversion, and storage technologies.

Dr. Zenghui Liu
Dr. Pan Gao
Prof. Dr. Zuo-Guang Ye
Guest Editors

Manuscript Submission Information

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Keywords

  • electroceramics
  • dielectric materials
  • piezoelectric materials
  • ferroelectric materials
  • multiferroic materials
  • energy storage
  • energy conversion
  • energy harvesting

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Published Papers (1 paper)

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Research

14 pages, 5354 KiB  
Article
Preparation of Sn-Doped Ga2O3 Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering
by Yantao Liu, Rong Huang, Tao Lin, Jiale Dang, Haoxiang Huang, Jiahao Shi and Sui Chen
Materials 2024, 17(13), 3227; https://doi.org/10.3390/ma17133227 - 1 Jul 2024
Cited by 2 | Viewed by 1414
Abstract
Sn-doped Ga2O3 thin films and metal–semiconductor–metal (MSM) ultraviolet detectors were prepared using the co-sputtering method to enhance their photoelectric performance. The results revealed that Sn doping can effectively change the optical and electrical properties of thin films, greatly improving the [...] Read more.
Sn-doped Ga2O3 thin films and metal–semiconductor–metal (MSM) ultraviolet detectors were prepared using the co-sputtering method to enhance their photoelectric performance. The results revealed that Sn doping can effectively change the optical and electrical properties of thin films, greatly improving the photoelectric responsiveness of the devices. Through microstructure testing results, all of the thin film structures were determined to be monoclinic beta phase gallium oxide. At a DC power of 30 W, the thickness of the Sn-doped thin film was 430 nm, the surface roughness of the thin film was 4.94 nm, and the carrier concentration, resistivity, and mobility reached 9.72 × 1018 cm−3, 1.60 × 10−4 Ω·cm, and 45.05 cm3/Vs, respectively. The optical results show that Sn doping clearly decreases the transmission of thin films and that the bandgap can decrease to 3.91 eV. Under 30 W DC power, the photo dark current ratio of the detector can reach 101, time responses of tr = 31 s and tf = 22.83 s were obtained, and the spectral responsivity reached 19.25 A/W. Full article
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