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Advanced Chalcogenide Materials for Optoelectronic Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: 20 July 2024 | Viewed by 731

Special Issue Editor

Optical Processes in Nanostructured Materials, National Institute of Materials Physics, 077125 Bucharest, Romania
Interests: phase change memories; chalcogenide glasses; 2D transition metal dichalcogenides; thin chalcogenide films
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

In the field of optoelectronics, advanced chalcogenide materials stand out due to their versatile applications and unique properties. This Special Issue focuses on the comprehensive exploration of chalcogenide materials, ranging from phase-change materials, chalcogenide glasses, and thin film solar cells, and extending to the area of 2D and layered structures. The focus is placed on both the synthesis and structural characterization of these materials, along with an in-depth examination of their optical and electronic properties, which are crucial for their functionality in optoelectronic devices.

A significant aspect of this issue is the investigation of phase-change materials (PCMs). Known for their quick and reversible transition between crystalline and amorphous states, they offer innovative avenues in data storage and neuromorphic computing applications. This is complemented by studies on amorphous semiconductors and nanocrystalline chalcogenides, paving new paths in material science. The phenomenon of ovonic threshold switching, inherent to these materials, highlights their potential in switching and memory applications.

It is my pleasure to invite you to submit a manuscript for this Special Issue. The papers in this Special Issue should not only review the current state of the art but also push forward our understanding of chalcogenide materials. They should offer insights into the synthesis processes, structural complexities, and functional capabilities of these materials, establishing a comprehensive understanding crucial for further advancements.

Dr. Alin Velea
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • phase-change materials
  • chalcogenide glasses
  • chalcogenide thin film solar cells
  • 2D and layered chalcogenide materials
  • ovonic threshold switching
  • amorphous semiconductors
  • nanocrystalline chalcogenides
  • structural characterization of chalcogenide materials
  • optical and electronic properties
  • chalcogenide material synthesis

Published Papers (1 paper)

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Research

15 pages, 5704 KiB  
Article
Fs Laser Patterning of Amorphous As2S3 Thin Films
by Claudia Mihai, Florin Jipa, Gabriel Socol, Adrian E. Kiss, Marian Zamfirescu and Alin Velea
Materials 2024, 17(4), 798; https://doi.org/10.3390/ma17040798 - 7 Feb 2024
Viewed by 592
Abstract
This study investigates the morphological changes induced by femtosecond (fs) laser pulses in arsenic trisulfide (As2S3) thin films and gold–arsenic trisulfide (Au\As2S3) heterostructures, grown by pulsed laser deposition (PLD). By means of a direct laser [...] Read more.
This study investigates the morphological changes induced by femtosecond (fs) laser pulses in arsenic trisulfide (As2S3) thin films and gold–arsenic trisulfide (Au\As2S3) heterostructures, grown by pulsed laser deposition (PLD). By means of a direct laser writing experimental setup, the films were systematically irradiated at various laser power and irradiation times to observe their effects on surface modifications. AFM was employed for morphological and topological characterization. Our results reveal a clear transition threshold between photoexpansion and photoevaporation phenomena under different femtosecond laser power regimes, occurring between 1 and 1.5 mW, irrespective of exposure time. Notably, the presence of a gold layer in the heterostructure minimally influenced this threshold. A maximum photoexpansion of 5.2% was obtained in As2S3 films, while the Au\As2S3 heterostructure exhibited a peak photoexpansion of 0.8%. The study also includes a comparative analysis of continuous-wave (cw) laser irradiation, confirming the efficiency of fs laser pulses in inducing photoexpansion effects. Full article
(This article belongs to the Special Issue Advanced Chalcogenide Materials for Optoelectronic Applications)
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