Nitride Semiconductors Revolution: Material, Devices and Applications

Dear Colleagues,

Welcome to the GaN revolution! It is not an exaggeration to define the spectacular developments in the field of nitride semiconductors of last years as a revolution. Only twenty years ago, we illuminated our houses with an incandescent filament that produced light but also a significant cost on the electric bill. Today, we save more than 80% of energy with LED lamps. And that is not all: the newest nitride power devices have performances at least 10 times better than existing silicon devices, leading to significant reductions in energy consumption; amplifiers delivering 50 W in the Ku-band are commercially available; Blu-ray is now an established and well-known technology but twenty years ago was familiar only to Star Wars fans. Still, solar-blind flame detectors, UV sources, nanoscale electronics, spintronics, etc., the list could go on and on!

The purpose of this Special Issue is to cover some of the new research on nitride semiconductors, concerning the design of the devices and the development of new applications, along with advances in material processing. This Special Issue provides a chance to capture the latest advances, propose new exciting challenges, and disseminate innovative studies and breakthrough discoveries on nitride semiconductor devices.

The final goal of this issue is to become an outstanding reference for the latest progress in nitride semiconductor devices and applications for all the researchers working in this field. Being conscious that the revolution is far from over!

Prof. Mosca Mauro
Guest Editor

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