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Open AccessArticle

Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

1
Department of Information Engineering, University of Padova, 35131 Padova, Italy
2
Institut d’Electronique, de Microélectronique et de Nanotechnologie, Centre National de la Recherche Scientifique (IEMN-CNRS), 59652 Villeneuve d’Ascq, France
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(11), 1840; https://doi.org/10.3390/electronics9111840
Received: 29 September 2020 / Revised: 26 October 2020 / Accepted: 28 October 2020 / Published: 3 November 2020
(This article belongs to the Special Issue Nitride Semiconductors Revolution: Material, Devices and Applications)
In this article, we investigate the behavior of InGaN–GaN Multiple Quantum Well (MQW) photodetectors under different excitation density (616 µW/cm2 to 7.02 W/cm2) and temperature conditions (from 25 °C to 65 °C), relating the experimental results to carrier recombination/escape dynamics. We analyzed the optical-to-electrical power conversion efficiency of the devices as a function of excitation intensity and temperature, demonstrating that: (a) at low excitation densities, there is a lowering in the optical-to-electrical conversion efficiency and in the short-circuit current with increasing temperature; (b) the same quantities increase with increasing temperature when using high excitation power. Moreover, (c) we observed an increase in the signal of photocurrent measurements at sub-bandgap excitation wavelengths with increasing temperature. The observed behavior is explained by considering the interplay between Shockley–Read–Hall (SRH) recombination and carrier escape. The first mechanism is relevant at low excitation densities and increases with temperature, thus lowering the efficiency; the latter is important at high excitation densities, when the effective barrier height is reduced. We developed a model for reproducing the variation of JSC with temperature; through this model, we calculated the effective barrier height for carrier escape, and demonstrated a lowering of this barrier with increasing temperature, that can explain the increase in short-circuit current at high excitation densities. In addition, we extracted the energy position of the defects responsible for SRH recombination, which are located 0.33 eV far from midgap. View Full-Text
Keywords: efficiency; gallium nitride; multiple quantum wells photodetectors; photodetectors; wide bandgap semiconductors efficiency; gallium nitride; multiple quantum wells photodetectors; photodetectors; wide bandgap semiconductors
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MDPI and ACS Style

Caria, A.; De Santi, C.; Dogmus, E.; Medjdoub, F.; Zanoni, E.; Meneghesso, G.; Meneghini, M. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. Electronics 2020, 9, 1840. https://doi.org/10.3390/electronics9111840

AMA Style

Caria A, De Santi C, Dogmus E, Medjdoub F, Zanoni E, Meneghesso G, Meneghini M. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors. Electronics. 2020; 9(11):1840. https://doi.org/10.3390/electronics9111840

Chicago/Turabian Style

Caria, Alessandro; De Santi, Carlo; Dogmus, Ezgi; Medjdoub, Farid; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo. 2020. "Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors" Electronics 9, no. 11: 1840. https://doi.org/10.3390/electronics9111840

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