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Article

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

1
Department of Engineering, University of Palermo, Viale delle Scienze, Building 9, I-90128 Palermo, Italy
2
Novagan LLC, EPFL Innovation Park, CH-1015 Lausanne, Switzerland
*
Author to whom correspondence should be addressed.
F.C. is now with ABB Power Grids Switzerland Ltd., Semiconductors, CH-5600 Lenzburg, Switzerland.
Electronics 2020, 9(6), 991; https://doi.org/10.3390/electronics9060991
Received: 7 May 2020 / Revised: 1 June 2020 / Accepted: 11 June 2020 / Published: 13 June 2020
(This article belongs to the Special Issue Nitride Semiconductors Revolution: Material, Devices and Applications)
Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal–organic vapor-phase epitaxy -grown epitaxial layer of p-doped GaN. Circular 200 μm-sized violet-emitting LEDs with a p-n contact distance as low as 3 μm exhibit a turn-on voltage of 3 V, and an emitting optical power at 395 nm of a few microwatts. Electroluminescence spectrum investigation shows that the emissive process can be ascribed to four different recombination transitions, dominated by the electron-hole recombinations on the ZnO side. View Full-Text
Keywords: ZnO/GaN heterojunction LEDs; ZnO nanorods; epitaxial p-GaN layers; chemical bath deposition; ZnO/GaN heterostructure ZnO/GaN heterojunction LEDs; ZnO nanorods; epitaxial p-GaN layers; chemical bath deposition; ZnO/GaN heterostructure
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MDPI and ACS Style

Macaluso, R.; Lullo, G.; Crupi, I.; Sciré, D.; Caruso, F.; Feltin, E.; Mosca, M. Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction. Electronics 2020, 9, 991. https://doi.org/10.3390/electronics9060991

AMA Style

Macaluso R, Lullo G, Crupi I, Sciré D, Caruso F, Feltin E, Mosca M. Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction. Electronics. 2020; 9(6):991. https://doi.org/10.3390/electronics9060991

Chicago/Turabian Style

Macaluso, Roberto, Giuseppe Lullo, Isodiana Crupi, Daniele Sciré, Fulvio Caruso, Eric Feltin, and Mauro Mosca. 2020. "Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction" Electronics 9, no. 6: 991. https://doi.org/10.3390/electronics9060991

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