Special Issue "Thin Film Transistor"
Deadline for manuscript submissions: closed (28 February 2019).
A printed edition of this Special Issue is available here.
Interests: solid-state lighting devices; solar cells; power device; HEMT; flexible electronics; optoelectronics; Nitride and oxide semiconductor MOCVD growths
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Thin film transistors are a type of field effect transistor made by depositing thin films of an active semiconductor layer, as well as the dielectric layer. There exist a wide variety of applications, such as active-matrix liquid-crystal displays, activematrix organic light-emitting displays, photodetecting devices, and biosensors. Each individual LCD pixel is controlled by one to four transistors. The TFTs acts as an switches which allows the pixels to turn on and off very easily.The basis difference between LCD and TFT is that TFT is technology is used to produce LCDs. Solution processed organic semiconductors have offered potential applications due to their low cost, facile solution process, easy functionalization, mass production, low temperature, large area manufacture, and flexibility. However, conductive polymers have low conductivity and organic materials degrade in moisture, prohibiting suitable application of OTFTs in ambient condition. OTFT have higher on-off ratio, however, suffers from poor field-effect mobility as compared to inorganic semiconductor based thin film transistors.
Recently, new wide-band energy gap semiconductors can be grown by ALD, PLD, sputtering or MOCVD. They have a high potential to fabricate and apply to TFT. The inorganic semiconductors have good stability against environmental degradation over Organic counter parts whereas organic materials are usually flexible, transparent, and solution-processed at low temperatures, they are prone to degradation, when exposed to heat, moisture, and oxygen.
We invite researchers to submit papers that discuss the development of new functional and smart materials inorganic, as well as organic, semiconductor materials such as, ZnO, InZnO, GaO, AlGaO, AnGaO, AlN/GaN, conducting polymers, molecular semiconductors, perovskite based materials, carbon nanotubes, carbon naotubes/polymer composites and 2D materials (for example, grapheme, MoS2), etc., in potential applications for display drivers, radio frequency identification tags, e-paper, gas, chemical and biosensors, etc.
Prof. Dr. Ray-Hua Horng
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- Materials and Method: Synthesis of proposed semiconductor materials as well as dielectrics materials by low-temperature solution process and different thin film deposition techniques
- Crystal growth of semiconductor materials and modeling
- Controlling and optimizing the grain size, crystallinity and surface morphology modification of solution-processed organic semiconductors. Crystallization to improve the field-effect mobility as well as the on–off ratio for application of large-area electronics on flexible substrates
- Understanding the physical parameter of thin film devices
- Material physical, structural and optical characterization such as SEM, HRTEM, BET, XRD, Raman, FTIR, UV-Vis, PL spectroscopy and optimization to improve the interfacial charge transfer
- Morphology, band gaps (Eg), nanostructures, photoluminescence, and charge carrier transport will be implemented to investigate the morphology-structure-property relationship. A simulation model to predict charge trapping behavior, grain boundary effcets, defect states will be developed as well to complement the experimental results of devices
- Study and charge trapping in high-k materials used as gate dielectric
- A facile strategy will be developed to achieve nanostructured morphology variation which generates plasmonics effect
- Organic thin film transistor for chemical and biological sensing
- The reliability (failure modes by measuring the electrical properties) and stability (against the environment moisture) of Organic TFT devices with respect to time, bending (stress and strain) analysis for flexible devices. Demonstrate the resistivity of contact electrodes. Verify the local heating at the electrode/semiconductor interface under continued operation