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Crystals
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Multiferroic Ceramics and Thin Film Nanostructures for Logic and Memory...
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Multiferroic Ceramics and Thin Film Nanostructures for Logic and Memory Applications

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Polycrystalline Ceramics".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 10492

Special Issue Editors

Dr. Dhiren K. Pradhan

E-Mail Website
Guest Editor
1. Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996, USA
2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Interests: ferroelectrics; magnetism; multiferroics; scanning probe microscopy; high energy density capacitor
Special Issues, Collections and Topics in MDPI journals
Dr. Venkata Sreenivas Puli

E-Mail Website
Guest Editor
National Research Council, Washington, DC 20001, USA
Interests: ferroelectrics; multiferroics; multicaloric materials, oixde based high energy density capacitor, scanning probe microscopy
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Manuel Henrique Lente

E-Mail Website
Guest Editor
Department of Science and Technology, Federal University of São Paulo (UNIFESP), São Paulo, Brazil
Interests: multiferroic materials; piezophotonics; photoferroelectrics; ferroelectric single crystals; ferroelectrics

Special Issue Information

Dear Colleagues,

Multiferroics represent an appealing class of multifunctional materials that simultaneously exhibit several ferroic orders such as ferroelectricity, (anti)ferromagnetism, and ferroelasticity. The coexistence of several order parameters in such materials brings about novel physical phenomena and offers possibilities for new device applications. Of particular interest is the existence of a cross-coupling between the magnetic and electric orders, termed as magnetoelectric (ME) coupling. This coupling enables the control of the ferroelectric polarization by a magnetic field and conversely, the manipulation of magnetization by an electric field. Hence, the coexistence of several order parameters and the magnetoelectric coupling in such materials can be exploited for novel memory application. As ferroelectric polarization and magnetization are used to encode binary information in FeRAMs (ferroelectric random access memories) and MRAMs (magnetic random access memories), respectively, the coexistence of magnetization and polarization in a multiferroic material allow the realization of four-state logics in a single device. The basic operation of such magnetoelectric random access memories (MERAMs) combines the magnetoelectric coupling with the interfacial exchange, coupling between a multiferroic and a ferromagnet to switch the magnetization of the ferromagnetic layer by using a voltage and vice versa. MeRAM’s key advantages over existing technologies is that it requires extraordinarily low operating voltage with very high-density microelectronic elements, high-speed reading and writing times, and nonvolatility.

Dr. Dhiren K. Pradhan
Dr. Venkata Puli
Prof. Dr. Manuel Henrique Lente
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • multiferroics
  • magnetoelectric
  • thin films
  • nanostructures
  • logic and memory devices

Published Papers (4 papers)

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Research

10 pages, 19907 KiB  
Article
Second-Order Raman Scattering in Ferroelectric Ceramic Solid Solutions LiNbxTa1−xO3
by Nikolay Sidorov, Mikhail Palatnikov, Alexander Pyatyshev and Pavel Sverbil
Crystals 2022, 12(4), 456; https://doi.org/10.3390/cryst12040456 - 24 Mar 2022
Cited by 4 | Viewed by 1894
Abstract
In the second-order Raman spectra of ceramic solid solutions, LiNbxTa1−xO3 weak overtone bands of fully symmetric fundamental polar excitations were observed for the first time. The frequencies of the two bands exceeded the value of the overtone frequency [...] Read more.
In the second-order Raman spectra of ceramic solid solutions, LiNbxTa1−xO3 weak overtone bands of fully symmetric fundamental polar excitations were observed for the first time. The frequencies of the two bands exceeded the value of the overtone frequency corresponding to the fully symmetrical vibration 4A1(z). The possibility of the existence of phonon bound states of the antipolar type in the vibrational spectrum of LiNbxTa1−xO3 ceramics is predicted. Full article
(This article belongs to the Special Issue Multiferroic Ceramics and Thin Film Nanostructures for Logic and Memory Applications)
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19 pages, 5414 KiB  
Article
Studies of Optical, Dielectric, Ferroelectric, and Structural Phase Transitions in 0.9[KNbO3]-0.1 [BaNi1/2Nb1/2O3−δ]
by Blanca Yamile Rosas, Alvaro A. Instan, Karuna Kara Mishra, Srungarpu Nagabhusan Achary and Ram S. Katiyar
Crystals 2022, 12(1), 35; https://doi.org/10.3390/cryst12010035 - 27 Dec 2021
Cited by 3 | Viewed by 2365
Abstract
The compound 0.9[KNbO3]-0.1[(BaNi1/2Nb1/2O3−δ] (KBNNO), a robust eco-friendly (lead-free) ferroelectric perovskite, has diverse applications in electronic and photonic devices. In this work, we report the dielectric, ferroelectric, and structural phase transitions behavior in the KBNNO compound [...] Read more.
The compound 0.9[KNbO3]-0.1[(BaNi1/2Nb1/2O3−δ] (KBNNO), a robust eco-friendly (lead-free) ferroelectric perovskite, has diverse applications in electronic and photonic devices. In this work, we report the dielectric, ferroelectric, and structural phase transitions behavior in the KBNNO compound using dielectric, X-ray diffraction, and Raman studies at ambient and as a function of temperature. Analyses of X-ray diffraction (XRD) data at room temperature (rtp) revealed the orthorhombic phase (sp. Gr. Amm2) of the compound with a minor secondary NiO cubic phase (sp. Gr. Fm3m). A direct optical band gap Eg of 1.66 eV was estimated at rtp from the UV–Vis reflectance spectrum analysis. Observation of non-saturated electric polarization loops were attributed to leakage current effects pertaining to oxygen vacancies in the compound. Magnetization studies showed ferromagnetism at room temperature (300 K) in this material. XRD studies on KBNNO at elevated temperatures revealed orthorhombic-to-tetragonal and tetragonal-to-cubic phase transitions at 523 and 713 K, respectively. Temperature-dependent dielectric response, being leaky, did not reveal any phase transition. Electrical conductivity data as a function of temperature obeyed Jonscher power law and satisfied the correlated barrier-hopping model, indicating dominance of the hopping conduction mechanism. Temperature-dependent Raman spectroscopic studies over a wide range of temperature (82–673 K) inferred the rhombohedral-to-orthorhombic and orthorhombic-to-tetragonal phase transitions at ~260, and 533 K, respectively. Several Raman bands were found to disappear, while a few Raman modes such as at 225, 270, 289, and 831 cm−1 exhibited discontinuity across the phase transitions at ~260 and 533 K. Full article
(This article belongs to the Special Issue Multiferroic Ceramics and Thin Film Nanostructures for Logic and Memory Applications)
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10 pages, 6138 KiB  
Article
Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction
by Jinfu Lin, Hongxia Liu, Shulong Wang and Siyu Zhang
Crystals 2021, 11(12), 1462; https://doi.org/10.3390/cryst11121462 - 26 Nov 2021
Cited by 8 | Viewed by 2858
Abstract
The resistive memory has become one of the most promising new memory types because of its excellent performance, and HfO2 resistive material has attracted extensive attention. The conduction mechanism based on oxygen vacancy is widely recognized in the research of new nonvolatile [...] Read more.
The resistive memory has become one of the most promising new memory types because of its excellent performance, and HfO2 resistive material has attracted extensive attention. The conduction mechanism based on oxygen vacancy is widely recognized in the research of new nonvolatile memory. An RRAM electrothermal coupling model based on the oxygen vacancy conduction mechanism was constructed using COMSOL. The resistance process of the device is simulated by solving the coefficient partial differential equation, and the distribution of oxygen vacancy concentration, temperature, electric field, electric potential and other parameters in the dielectric layer at different voltages are obtained. The effects of temperature, dielectric layer thickness, top electrode thermal conductivity and conductive wire size on the resistance characteristics of the device are studied. It has guiding significance to further study the RRAM mechanism. Full article
(This article belongs to the Special Issue Multiferroic Ceramics and Thin Film Nanostructures for Logic and Memory Applications)
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16 pages, 7413 KiB  
Article
Magnetoelectric and Multiferroic Properties of BaTiO3/NiFe2O4/BaTiO3 Heterostructured Thin Films Grown by Pulsed Laser Deposition Technique
by Venkata Sreenivas Puli, Dhiren Kumar Pradhan, Gollapudi Sreenivasulu, Simhachalam Narendra Babu, Nandiraju Venkata Prasad, Kalpana Madgula, Douglas B. Chrisey and Ram S. Katiyar
Crystals 2021, 11(10), 1192; https://doi.org/10.3390/cryst11101192 - 30 Sep 2021
Cited by 5 | Viewed by 2022
Abstract
Development of lead-free BaTiO3/NiFe2O4/BaTiO3 (BTO/NFO/BTO) trilayer structure thin films is significant for the realization of eco-friendly and implantable microelectromechanical systems (MEMS)-based devices. In the present work, we report BTO/NFO/BTO trilayer structure as a representative ferroelectric/ferromagnetic/ferroelectric (FE/FM/FE) [...] Read more.
Development of lead-free BaTiO3/NiFe2O4/BaTiO3 (BTO/NFO/BTO) trilayer structure thin films is significant for the realization of eco-friendly and implantable microelectromechanical systems (MEMS)-based devices. In the present work, we report BTO/NFO/BTO trilayer structure as a representative ferroelectric/ferromagnetic/ferroelectric (FE/FM/FE) system deposited on Pt(111)/TiO2/SiO2/Si using Pulsed Laser Deposition (PLD) technique. We report the ferroelectric, magnetic, and ME properties of BTO/NFO/BTO trilayer nanoscale heterostructure having dimensions 140/80/140 nm, at room temperature. High room temperature dielectric constant ~2145 at 100 Hz with low dielectric loss ~0.05 at 1 MHz is observed. Further, the deposited (BTO/NFO/BTO) tri-layered thin films showed magnetoelectric, multiferroic behavior with remanent polarization of 8.63 μCcm−2 at about 0.25 MV/cm and a reasonably high saturation magnetization of ~16 emu/cm3 at ~10 kOe is witnessed at room temperature. Tri-layered films have shown interesting magnetoelectric (ME) coupling coefficient (αE) ~54.5 mV/cm Oe at room temperature. Full article
(This article belongs to the Special Issue Multiferroic Ceramics and Thin Film Nanostructures for Logic and Memory Applications)
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