Special Issue "Advances in Functional Materials and Devices for Semiconductor and Energy Applications"

A special issue of Coatings (ISSN 2079-6412).

Deadline for manuscript submissions: 29 February 2020.

Special Issue Editor

Prof. Dr. You Seung Rim
E-Mail Website
Guest Editor
School of Intelligent Mechatronics Engineering, Sejong University
Interests: printed electronics; biosensors; oxide semiconductors; thin-film transistors; power semiconductor

Special Issue Information

Dear Colleagues,

Recently, new concept-based sensor platforms, such as non-invasive monitoring of body fluids, electric-skin-based pressure-sensitive and stretchable stimulation, particle matter detection, and highly-selective gas detection, have been attracting attention. These sensing platforms can be produced by applying unconventional structures with high strechability, 1D–3D nanomaterials for high sensitivity, and the immobilization of specific receptors for selective reactions. Of course, there are no restrictions in terms of materials, structures, and hybrid components, so many different approaches can be pursued with these platforms irrespective of whether the systems involve organic or inorganic materials.

Another key issue in the processing of sensor materials, such as spray pyrolysis, the ultrathin coating process via a solution process, or ink-jet printing, is the need for high sensitivity and selectivity with a reasonably low cost.

The use of sensor devices can be expanded to diverse applications, such as energy conversion with photocatalytic activity, photovoltaics, and triboelectrics regarding energy harvesting for the best decision of a certain situation through the acquistion of big data. 

This aim of this Special Issue is to focus the research on multidisciplinary material synthesis, processing, and characterization of functional metal oxides, organic/inorganic hybrids, organic semiconductors, and their applications in various devices on the following topics, among others:

  • Synthesis and processing of inorganic materials for highly efficient energy conversion systems;
  • Device performance of nano/micro sensor platforms for biological and environmental conditions;
  • Synthesis and characterization of 1D/2D/3D nanomaterials for highly-sensitive sensors;
  • New materials for highly-sensitive and selective sensors;
  • Structural studies of stretchable and flexible sensors;
  • Printable sensing materials and devices.

Prof. Dr. You Seung Rim
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanomaterials
  • printing process
  • inorganic semiconductors
  • organic semiconductors
  • inorganic/organic hybrid
  • sensor devices
  • stretchable electronics

Published Papers (6 papers)

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Research

Open AccessArticle
A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR
Coatings 2020, 10(2), 164; https://doi.org/10.3390/coatings10020164 - 11 Feb 2020
Abstract
A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte [...] Read more.
A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte and a Cu electrolyte. However, the use of a Pb electrolyte is known to cause environmental issues. This study presents an Mn monolayer, which mediated the electrochemical growth of Cu(Mn) film through a sequence of alternating an underpotential deposition (UPD) of Mn, replacing the conventionally used UPD-Pb, with a surface-limited redox replacement (SLRR) of Cu. The use of the sacrificial Mn monolayer uniquely provides redox replacement by Cu2+ owing to the standard reductive potential differences. Repeating the sequence of the UPD-Mn followed by the SLRR-Cu enables Cu(Mn) film growth in an atomic layer growth manner. Further, controlling the time of open circuit potential (OCP) during the Cu-SLRR yields a technique to control the content of the resultant Cu(Mn) film. A longer OCP time caused more replacement of the UPD-Mn by the Cu2+, thus resulting in a Cu(Mn) film with a higher Cu concentration. The proposed layer-by-layer growth method offers a wet, chemistry-based deposition capable of fabricating Cu interconnects without the use of the barrier layer and can be of interest in microelectronics. Full article
Open AccessFeature PaperArticle
Improvement of Electrical Performance by Neutron Irradiation Treatment on IGZO Thin Film Transistors
Coatings 2020, 10(2), 147; https://doi.org/10.3390/coatings10020147 - 06 Feb 2020
Abstract
The effects of the neutron irradiation treatment on indium-gallium-zinc oxide (IGZO) are investigated as a function of the neutron irradiation time. With an increase in neutron irradiation time, the oxygen vacancies associated the oxygen deficient states increase, and both shallow and deep band [...] Read more.
The effects of the neutron irradiation treatment on indium-gallium-zinc oxide (IGZO) are investigated as a function of the neutron irradiation time. With an increase in neutron irradiation time, the oxygen vacancies associated the oxygen deficient states increase, and both shallow and deep band edge states below the conduction band also increase. Moreover, the conduction band offset continuously decreases because of the increase in the oxygen vacancies with increasing the neutron irradiation time. In IGZO TFTs with the neutron irradiation time for 10 s, superior device performance demonstrates such as the lower threshold voltage, higher field effect mobility, smaller sub-threshold gate swing, larger on-off current ratio, and improved bias stability, comparing those of other IGZO TFTs. Full article
Open AccessArticle
The Effect of the Indium(III) Phthalocyanine Chloride Films on the Behavior of Flexible Devices of Flat and Disperse Heterojunction
Coatings 2019, 9(10), 673; https://doi.org/10.3390/coatings9100673 - 17 Oct 2019
Abstract
By means of flat-heterojunction structures based on small semiconductor molecules (MSCs), an analysis of the indium(III) phthalocyanine chloride (In(III)PcCl) film as a constituent of optoelectronic devices was performed. The study included the behavior of In(III)PcCl playing three different roles: a donor species, an [...] Read more.
By means of flat-heterojunction structures based on small semiconductor molecules (MSCs), an analysis of the indium(III) phthalocyanine chloride (In(III)PcCl) film as a constituent of optoelectronic devices was performed. The study included the behavior of In(III)PcCl playing three different roles: a donor species, an electronic acceptor, and a hole layer carrier. The flat-heterojunction structures were prepared by vacuum deposition method that permits a controlled layer-by-layer growth of high purity films. The investigated structures were characterized by scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDS), UV-vis spectroscopy and optical bandgaps were obtained by Tauc’s and Cody’s methods. As the structures exhibit a large spectral absorption in the visible range, they were incorporated into flat-heterojunction devices based on flexible and rigid substrates. However, during the synthesis of those structures, the disperse heterojunction arrangement was found and indeed it showed to be more efficient than the initial flat-heterojunction. In order to complement these results, disperse heterojunction arrangement structure as well as its bandgap value were obtained by DFT calculations. Finally, the electronic behavior of both fabricated devices, disperse heterojunction and flat-heterojunction were compared. Full article
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Open AccessArticle
Boron and Nitrogen Co-Doped Porous Carbons Synthesized from Polybenzoxazines for High-Performance Supercapacitors
Coatings 2019, 9(10), 657; https://doi.org/10.3390/coatings9100657 - 11 Oct 2019
Abstract
Boron and nitrogen co-doped porous carbons (BNPC-X) were synthesized from boron-containing polybenzoxazines through carbonization and chemical activation, where X represents the weight ratio of boric acid to benzoxazine resin. The as-prepared BNPC-X were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, [...] Read more.
Boron and nitrogen co-doped porous carbons (BNPC-X) were synthesized from boron-containing polybenzoxazines through carbonization and chemical activation, where X represents the weight ratio of boric acid to benzoxazine resin. The as-prepared BNPC-X were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, element analysis and electrochemical measurements. The results show that the BNPC-0.15 possesses relatively high weight fractions of boron (2.97 wt %) and nitrogen (2.43 wt %), a homogeneous pore distribution, and remarkable electrochemical capacitive performance. It exhibits high specific capacitance (286 F·g−1 at 0.05 A·g−1), excellent rate capability (at A·g−1), and good charge–discharge stability (>92% capacitance retention after 1,000 cycles at 1.0 A·g−1) in 6 M KOH aqueous solution. Full article
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Open AccessFeature PaperArticle
Cost-Effective and High-Throughput Plasmonic Interference Coupled Nanostructures by Using Quasi-Uniform Anodic Aluminum Oxide
Coatings 2019, 9(7), 420; https://doi.org/10.3390/coatings9070420 - 30 Jun 2019
Abstract
Large-area and uniform plasmonic nanostructures have often been fabricated by simply evaporating noble metals such as gold and silver on a variety of nanotemplates such as nanopores, nanotubes, and nanorods. However, some highly uniform nanotemplates are limited to be utilized by long, complex, [...] Read more.
Large-area and uniform plasmonic nanostructures have often been fabricated by simply evaporating noble metals such as gold and silver on a variety of nanotemplates such as nanopores, nanotubes, and nanorods. However, some highly uniform nanotemplates are limited to be utilized by long, complex, and expensive fabrication. Here, we introduce a cost-effective and high-throughput fabrication method for plasmonic interference coupled nanostructures based on quasi-uniform anodic aluminum oxide (QU-AAO) nanotemplates. Industrial aluminum, with a purity of 99.5%, and copper were used as a base template and a plasmonic material, respectively. The combination of these modifications saves more than 18 h of fabrication time and reduces the cost of fabrication 30-fold. From optical reflectance data, we found that QU-AAO based plasmonic nanostructures exhibit similar optical behaviors to highly ordered (HO) AAO-based nanostructures. By adjusting the thickness of the AAO layer and its pore size, we could easily control the optical properties of the nanostructures. Thus, we expect that QU-AAO might be effectively utilized for commercial plasmonic applications. Full article
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Open AccessArticle
Rectifying Characteristics of Thermally Treated Mo/SiC Schottky Contact
Coatings 2019, 9(6), 388; https://doi.org/10.3390/coatings9060388 - 15 Jun 2019
Abstract
The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltage characteristic curve by the Cheung and Cheung method and the Norde method. The as-deposited [...] Read more.
The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltage characteristic curve by the Cheung and Cheung method and the Norde method. The as-deposited Mo/SiC Schottky contacts possessed Schottky barrier heights of 1.17 and 1.22 eV, respectively. The Schottky barrier heights of the diodes were decreased to 1.01 and 0.91 eV after annealing at 400 °C for 30 min. The ideality factor was increased from 1.14 and 1.08 to 1.51 and 1.41, respectively. This implies the presence of non-ideal behaviors due to a current transport mechanism other than ideal thermionic emission, and the non-ideal behaviors increased as a result of excessive thermal annealing. In contrast, only a negligible change was observed in the crystallographic characteristics. This result suggests that the reason for the deviation from the ideal rectifying characteristics of the Mo/SiC Schottky contact through the annealing process was the variation in the current transport mechanism, including recombination, tunneling, and/or minority carrier injection. Full article
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Planned paper 1:

Title: Effect of oxygen deficient on Solution-Processed Ga doped In2O3-based Electrolyte-Gated Transistors for Continuous pH Monitoring

Authors: Joon Hui Park, You Seung Rim

Planned paper 2:
Title: the effect of band alignments in Rutile-Antase TiO2 nano-structures for efficient solar-water splitting
Taekjib Choi
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