Electronics, Volume 5, Issue 1

An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR material parameters and a method to account for the density of states of one-d...

We demonstrate the production of organic bottom gate transistors with self-aligned electrodes, using only continuous roll-to-roll (R2R) techniques. The self-alignment allows accurate <5 µm layer-to-layer registration, which is usually a challenge...

Layered transition-metal dichalcogenides have extraordinary electronic properties, which can be easily modified by various means. Here, we have investigated how the stability and electronic structure of MoS...