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Open AccessFeature PaperArticle

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Institut für Mikro-und Nanoelektronik, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany
Author to whom correspondence should be addressed.
Academic Editor: Zhenqiang Ma
Electronics 2016, 5(1), 3;
Received: 2 November 2015 / Revised: 22 December 2015 / Accepted: 29 December 2015 / Published: 12 January 2016
(This article belongs to the Special Issue Two-Dimensional Electronics - Prospects and Challenges)
An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel) with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates. View Full-Text
Keywords: graphene; graphene transistor; GNR MOSFET; simulation graphene; graphene transistor; GNR MOSFET; simulation
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Nanmeni Bondja, C.; Geng, Z.; Granzner, R.; Pezoldt, J.; Schwierz, F. Simulation of 50-nm Gate Graphene Nanoribbon Transistors. Electronics 2016, 5, 3.

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