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2 June 2025

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Special Issue: 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics, and Sensing

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1
Consiglio Nazionale della Ricerche (CNR), Istituto per la Microelettronica e Microsistemi (IMM), Strada VIII, 5, 95121 Catania, Italy
2
Consiglio Nazionale delle Ricerche (CNR), Istituto Officina dei Materiali (IOM), Area Science Park, S.S. 14 Km. 163, 5, Basovizza, 34149 Trieste, Italy
3
Consiglio Nazionale delle Ricerche (CNR), Istituto dei Materiali per l’Elettronica ed il Magnetismo (IMEM), Parco Area delle Scienze 37/a, 43124 Parma, Italy
4
Department of Physics and Chemistry Emilio Segré, University of Palermo, Via Archirafi 36, 90143 Palermo, Italy
Nanomaterials2025, 15(11), 851;https://doi.org/10.3390/nano15110851
This article belongs to the Special Issue 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing
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Since the first report in 2004 on the electronic properties of graphene exfoliated from graphite [1], the research on two-dimensional materials (2DMs) has grown steadily. To date, hundreds of 2DMs have been investigated experimentally, whereas a database of up to 6000 monolayer structures has recently been compiled through computational studies [2]. Interestingly, the 2DM family covers the entire range of electronic properties, from semimetallic graphene and semiconducting transition metal dichalcogenides (TMDs) to insulating hexagonal boron nitride. Furthermore, van der Waals (vdW) heterostructures with engineered bandgaps have been realized by stacking different layers [3], enabling the demonstration of novel device concepts for electronics/optoelectronic, sensing, quantum, and energy applications.
In this context, this Special Issue, entitled “2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing”, features insightful contributions on the scalable growth of 2DMs, fabrication approaches of vdW heterostructures, advanced characterization methods (optical, vibrational, chemical, electrical), and the theoretical modeling of these heterostructures. Furthermore, it aims to address challenges involved in 2DM integration and device fabrication.
Specifically, the Special Issue includes 10 high-quality, original research papers covering the following topics:
i.
Scalable synthesis of molybdenum disulfide (MoS2) through an advanced chemical vapor deposition (CVD) approach based on liquid Mo precursors [4], as well as by pulsed laser deposition (PLD) on substrates of interest for microelectronics (sapphire, gallium nitride) [5];
ii.
First-principles calculations of electronic and optical properties of graphene, borophene, and boron carbide 2D heterostructures [6];
iii.
Advanced optical and electronic transport characterization of novel vdW heterostructures (Ta2NiS5/CrOCl) [7];
iv.
Electronic and optoelectronic devices based on 2DM heterostructures, i.e., novel 2D field effect transistors with a tungsten diselenide (WSe2) channel and multilayer palladium diselenide (PdSe2) vdW contacts [8]; bipolar transistors based on a MoS2/WSe2/MoS2 heterostructure [9]; photo-transistors and self-powered photodetectors based on graphene/Si [10]; NiO/graphene/Si junctions [11]; photovoltaic devices [12]; and biosensors based on MoS2/WTe2 Schottky barriers [13].
This Special Issue spotlights relevant examples of ongoing research directions in the continuously expanding field of 2D materials and aims to serve as inspiration for researchers working in these areas.

Acknowledgments

The Guest Editors of this Special Issue acknowledge the support of European Union (NextGeneration EU), through the MUR-PRIN2022 project “2DIntegratE” (2022RHRZN2).

Conflicts of Interest

The authors declare no conflicts of interest.

References

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  11. Pandit, B.; Parida, B.; Jang, H.-S.; Heo, K. Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer. Nanomaterials 2024, 14, 551. [Google Scholar] [CrossRef] [Scilit] [PubMed]
  12. Rajpar, H.; Bashir, M.B.A.; Salih, E.Y.; Ahmed, E.M. Fabrication and Enhanced Performance Evaluation of TiO2@Zn/Al-LDH for DSSC Application: The Influence of Post-Processing Temperature. Nanomaterials 2024, 14, 920. [Google Scholar] [CrossRef] [Scilit] [PubMed]
  13. Zhang, X.; Chen, S.; Ma, H.; Sun, T.; Cui, X.; Huo, P.; Man, B.; Yang, C. Asymmetric Schottky Barrier-Generated MoS2/WTe2 FET Biosensor Based on a Rectified Signal. Nanomaterials 2024, 14, 226. [Google Scholar] [CrossRef] [Scilit] [PubMed]
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