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Nanomaterials
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2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing
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2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 30 June 2024 | Viewed by 5034

Special Issue Editors

Dr. Filippo Giannazzo

E-Mail Website
Guest Editor
Consiglio Nazionale delle Ricerche–Institute for Microelectronics and Microsystems (CNR-IMM), Strada VIII, I-95121 Catania, Italy
Interests: 2D materials (graphene, transition metal dichalcogenides); wide-bandgap semiconductors (SiC, GaN); high-power and high-frequency electronics; electrical atomic force microscopy (C-AFM, SCM, SSRM)
Special Issues, Collections and Topics in MDPI journals
Dr. Federica Bondino

E-Mail Website
Guest Editor
CNR-IOM, I-34149 Trieste, Italy
Interests: synthesis and characterization of low-dimensional materials (graphene, nanoribbons, nanographene, transition metal dichalcogenides); reactivity at interfaces and surfaces; on-surface processes; XPS
Dr. Luca Seravalli

E-Mail Website
Guest Editor
CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma, Italy
Interests: CVD growth of transition-metal dichalcogenides; MOVPE growth and characterization of wide-band semiconductor oxides (Ga2O3); MOVPE growth, characterization and modelling of semiconductor nanowires for application in sensing
Special Issues, Collections and Topics in MDPI journals
Dr. Simonpietro Agnello

E-Mail Website
Guest Editor
Dipartimento di Fisica e Chimica—Emilio Segrè, Università degli Studi di Palermo, Via Archirafi 36, 90123 Palermo, Italy
Interests: 2D materials; optical; Raman and electron paramagnetic resonance spectroscopy studies of advanced materials for optics, electronics and photonics; irradiation effects on matter
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

2D layered materials (including graphene, transition metal dichalcogenides and hexagonal boron nitride) and their van der Waals heterostructures have beeen the object of intensive investigations for their potential applications in electronics/optoelectronics, sensing, quantum and energy applications. In particular, the integration of 2D materials with bulk (3D) semiconductors, such as Si, Ge and wide-bandgap semiconductors (SiC, GaN), is currently being explored to combine their functional properties with mature microelectronics technology, thus allowing for the demonstration of advanced or radically new device concepts.

The present Special Issue aims to collect significant contributions on the scalable growth of 2D materials and on the fabrication approaches of 2D materials heterostructures. Advanced characterization methods (optical, vibrational, chemical, electrical) and theoretical modelling of these heterostructures will be in the scope of this collection. Furthermore, we will host papers addressing the challenges involved in 2D material integration and device fabrication, as well as those that demonstrate novel applications in electronics/optoelectronics and sensing.

It is our pleasure to invite you to submit a manuscript for this Special Issue. Full papers, short communications and reviews are welcome.

Dr. Filippo Giannazzo
Dr. Federica Bondino
Dr. Luca Seravalli
Dr. Simonpietro Agnello
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D materials such as graphene, transition metal dichalcogenides, h-BN, Xenes (silicene, stanene, phosphorene, etc.), MXenes
  • Van der Waals heterostructures
  • large area growth methods of 2D materials (CVD, MOCVD, MBE, PLD, ALD)
  • advanced characterizations of 2D materials and heterostructures (AFM, TEM, Raman, optical and photoelectron spectroscopy)
  • theoretical modelling
  • electronic/optoelectronics applications (digital, RF, photodetectors, flexible/wearable electronics)
  • sensors (environmental, chemical, biomedical applications)
  • quantum technologies
  • energy technologies (light harvesting, thermoelectrics, batteries/supercapacitors, hydrogen evolution reaction)

Published Papers (5 papers)

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Research

11 pages, 3048 KiB  
Article
Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer
by Bhishma Pandit, Bhaskar Parida, Hyeon-Sik Jang and Keun Heo
Nanomaterials 2024, 14(6), 551; https://doi.org/10.3390/nano14060551 - 21 Mar 2024
Viewed by 712
Abstract
In this study, a self-powered broadband photodetector based on graphene/NiO/n-Si was fabricated by the direct spin-coating of nanostructured NiO on the Si substrate. The current–voltage measurement of the NiO/Si heterostructure exhibited rectifying characteristics with enhanced photocurrent under light illumination. Photodetection capability was measured [...] Read more.
In this study, a self-powered broadband photodetector based on graphene/NiO/n-Si was fabricated by the direct spin-coating of nanostructured NiO on the Si substrate. The current–voltage measurement of the NiO/Si heterostructure exhibited rectifying characteristics with enhanced photocurrent under light illumination. Photodetection capability was measured in the range from 300 nm to 800 nm, and a higher photoresponse in the UV region was observed due to the wide bandgap of NiO. The presence of a top graphene transparent conducting electrode further enhanced the responsivity in the whole measured wavelength region from 350 to 800 nm. The photoresponse of the NiO/Si detector at 350 nm was found to increase from 0.0187 to 0.163 A/W at −1 V with the insertion of the graphene top layer. A high photo-to-dark current ratio (≃104) at the zero bias indicates that the device has advantageous application in energy-efficient high-performance broadband photodetectors. Full article
(This article belongs to the Special Issue 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing)
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14 pages, 3105 KiB  
Article
Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors
by Gennadiy Murastov, Muhammad Awais Aslam, Simon Leitner, Vadym Tkachuk, Iva Plutnarová, Egon Pavlica, Raul D. Rodriguez, Zdenek Sofer and Aleksandar Matković
Nanomaterials 2024, 14(5), 481; https://doi.org/10.3390/nano14050481 - 06 Mar 2024
Viewed by 1059
Abstract
Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to WSe2 [...] Read more.
Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to WSe2 remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal–oxide–semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effect transistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate that PdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type WSe2 devices with PdSe2 van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the WSe2 under the contacts, enabling pinning of the threshold voltage to the valence band of WSe2, yielding pure p-type operation of the devices. Full article
(This article belongs to the Special Issue 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing)
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14 pages, 3152 KiB  
Article
Asymmetric Schottky Barrier-Generated MoS2/WTe2 FET Biosensor Based on a Rectified Signal
by Xinhao Zhang, Shuo Chen, Heqi Ma, Tianyu Sun, Xiangyong Cui, Panpan Huo, Baoyuan Man and Cheng Yang
Nanomaterials 2024, 14(2), 226; https://doi.org/10.3390/nano14020226 - 20 Jan 2024
Viewed by 914
Abstract
Field-effect transistor (FET) biosensors can be used to measure the charge information carried by biomolecules. However, insurmountable hysteresis in the long-term and large-range transfer characteristic curve exists and affects the measurements. Noise signal, caused by the interference coefficient of external factors, may destroy [...] Read more.
Field-effect transistor (FET) biosensors can be used to measure the charge information carried by biomolecules. However, insurmountable hysteresis in the long-term and large-range transfer characteristic curve exists and affects the measurements. Noise signal, caused by the interference coefficient of external factors, may destroy the quantitative analysis of trace targets in complex biological systems. In this report, a “rectified signal” in the output characteristic curve, instead of the “absolute value signal” in the transfer characteristic curve, is obtained and analyzed to solve these problems. The proposed asymmetric Schottky barrier-generated MoS2/WTe2 FET biosensor achieved a 105 rectified signal, sufficient reliability and stability (maintained for 60 days), ultra-sensitive detection (10 aM) of the Down syndrome-related DYRK1A gene, and excellent specificity in base recognition. This biosensor with a response range of 10 aM–100 pM has significant application potential in the screening and rapid diagnosis of Down syndrome. Full article
(This article belongs to the Special Issue 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing)
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9 pages, 3493 KiB  
Communication
Symmetry-Engineering-Induced In-Plane Polarization Enhancement in Ta2NiS5/CrOCl van der Waals Heterostructure
by Yue Su, Peng Chen, Xiangrui Xu, Yufeng Zhang, Weiwei Cai, Gang Peng, Xueao Zhang and Chuyun Deng
Nanomaterials 2023, 13(23), 3050; https://doi.org/10.3390/nano13233050 - 29 Nov 2023
Viewed by 812
Abstract
Van der Waals (vdW) interfaces can be formed via layer stacking regardless of the lattice constant or symmetry of the individual building blocks. Herein, we constructed a vdW interface of layered Ta2NiS5 and CrOCl, which exhibited remarkably enhanced in-plane anisotropy [...] Read more.
Van der Waals (vdW) interfaces can be formed via layer stacking regardless of the lattice constant or symmetry of the individual building blocks. Herein, we constructed a vdW interface of layered Ta2NiS5 and CrOCl, which exhibited remarkably enhanced in-plane anisotropy via polarized Raman spectroscopy and electrical transport measurements. Compared with pristine Ta2NiS5, the anisotropy ratio of the Raman intensities for the B2g, 2Ag, and 3Ag modes increased in the heterostructure. More importantly, the anisotropy ratios of conductivity and mobility in the heterostructure increased by one order of magnitude. Specifically speaking, the conductivity ratio changed from ~2.1 (Ta2NiS5) to ~15 (Ta2NiS5/CrOCl), while the mobility ratio changed from ~2.7 (Ta2NiS5) to ~32 (Ta2NiS5/CrOCl). Such prominent enhancement may be attributed to the symmetry reduction caused by lattice mismatch at the heterostructure interface and the introduction of strain into the Ta2NiS5. Our research provides a new perspective for enhancing artificial anisotropy physics and offers feasible guidance for future functionalized electronic devices. Full article
(This article belongs to the Special Issue 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing)
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13 pages, 6187 KiB  
Article
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
by Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet and Filippo Giannazzo
Nanomaterials 2023, 13(21), 2837; https://doi.org/10.3390/nano13212837 - 26 Oct 2023
Cited by 2 | Viewed by 1041
Abstract
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using [...] Read more.
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS2 grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (ns from ~1 × 1013 to ~3.4 × 1013 cm−2 from T = 300 K to 500 K), with a donor ionization energy of Ei = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS2/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕB ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS2 on GaN in electronics/optoelectronics. Full article
(This article belongs to the Special Issue 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing)
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