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Crystals 2019, 9(3), 168; https://doi.org/10.3390/cryst9030168

Diode-Pumped Actively Q-Switched Nd:YVO4/RTP Intracavity Raman Laser at 1.49 µm

School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan 250100, China
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Received: 19 February 2019 / Revised: 15 March 2019 / Accepted: 18 March 2019 / Published: 22 March 2019
(This article belongs to the Special Issue Crystalline Raman Lasers)
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Abstract

For the first time, a diode-pumped actively Q-switched Nd:YVO4/RbTiOPO4 (RTP) intracavity Raman laser at 1.49 µm was demonstrated to the best of our knowledge. Experimentally, a dual-end diffusion-bonded YVO4–Nd:YVO4–YVO4 crystal was employed as the laser medium to generate 1.34 µm laser radiation, and an RTP crystal as the Raman medium to enable the frequency conversion, by which radiation at 1.49 µm was achieved successfully. With an incident pump power of 10.4 W, an average output power of 502 mW was obtained at a pulse repetition rate of 15 kHz, corresponding to a conversion efficiency of 4.8%. View Full-Text
Keywords: diode-pumped lasers; stimulated Raman scattering; Raman lasers; RbTiOPO4 crystal diode-pumped lasers; stimulated Raman scattering; Raman lasers; RbTiOPO4 crystal
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Jiao, Y.; Liu, Z.; Zhang, X.; Gao, F.; Jia, C.; Chen, X.; Cong, Z. Diode-Pumped Actively Q-Switched Nd:YVO4/RTP Intracavity Raman Laser at 1.49 µm. Crystals 2019, 9, 168.

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