- Article
Study on Tungsten Metallization and Interfacial Bonding of Silicon Nitride High-Temperature Co-Fired Ceramic Substrates
- Ling-Feng Wang,
- Zhe Li,
- Bo-An Zhou,
- Yu-Sen Duan,
- Ning Liu and
- Jing-Xian Zhang
For the first time, Si3N4 HTCC has been prepared using W as the metal phase by high-temperature co-firing (1830 °C/600 KPa/2 h) as a potential substrate candidate in electronic applications. It was discovered that the addition of Si3N4 to the W p...

