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Materials 2019, 12(1), 161; https://doi.org/10.3390/ma12010161

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Korea
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Received: 1 November 2018 / Revised: 17 December 2018 / Accepted: 28 December 2018 / Published: 7 January 2019
(This article belongs to the Special Issue Thin Film Fabrication and Surface Techniques)
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Abstract

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with conventional LTPS TFT. Moreover, the leakage current measured at VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered as a candidate for high performance LTPS TFTs. View Full-Text
Keywords: poly-Si TFT; LTPS TFT; FT-IR; Raman; surface passivation; leakage current poly-Si TFT; LTPS TFT; FT-IR; Raman; surface passivation; leakage current
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Jang, K.; Kim, Y.; Phong, P.D.; Lee, Y.; Park, J.; Yi, J. Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation. Materials 2019, 12, 161.

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