Celebration of 60th Anniversary of Moore's Law: The Significant Milestone in Micromachines

A special issue of Micromachines (ISSN 2072-666X).

Deadline for manuscript submissions: 31 December 2025 | Viewed by 785

Special Issue Editors


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Guest Editor
Department of Electrical, Computer and Biomedical Engineering, University of Pavia, 27100 Pavia, Italy
Interests: MEMS; MOEMS; optical sensors; interferometry; microphotonics; biophotonics; biosensors; lab on a chip
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Guest Editor
School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
Interests: MEMS; CMOS-MEMS sensors; micromirrors; microactuators; piezoelectric MEMS microspeakers; pMUTs; photoacoustic microscopy; optical endomicroscopy
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Guest Editor
Queensland Micro- and Nanotechnology Centre, Griffith University, West Creek Road, Nathan, QLD 4111, Australia
Interests: microfluidics; nanofluidics; micro/nanomachining technologies; micro/nanoscale science; instrumentation for biomedical applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

In an article published on 19 April 1965, Intel co-founder Gordon Moore predicted a doubling of the number of transistors in state-of-the-art integrated circuits (units per chip) every year for the following 10 years.

In 1975, Moore revised his first projection into a doubling every two years, which was known as Moore’s Law. This extrapolation based on an emerging trend has been a guiding principle for the semiconductor industry for close to 60 years. Moore's Law guided the semiconductor industry in long-term planning and setting targets for research and development (R&D). Moore's Law has been a driving force of technological and social change, productivity, and economic growth. The advanced development of the semiconductor industry lays a solid foundation for the progression of MEMS technology.

This Special Issue is a celebration of the 60th anniversary of Moore's law, an important development that drives innovation-based competition within the semiconductor industry; to mark this important milestone in microelectronics, MEMS, microsystems, microsensors, and microactuators, this Special Issue of Micromachines invites proposals for new reviews and original research papers. Topics include, but are not limited to, the following subjects:

  • Basic structures of MEMS (interdigital transducer; cantilever; microchannel, etc.);
  • Applications of MEMS (sensors; actuators; switches; microfluidics; microphotonics, etc.);
  • Processes of MEMS (surface micromachining; deposition; lithography; etching; 3D microfabrication, etc.);
  • Bio-MEMS and related fields;
  • Integrated circuits;
  • Integrated photonic circuits;
  • Semiconductor devices;
  • 2D semiconductor materials;
  • Complementary metal–oxide–semiconductor (CMOS);
  • Metal–oxide–semiconductor field-effect transistor (MOSFET);
  • Nanotransistor;
  • Photodetectors;
  • Quantum devices.

All members of this wide and active community are encouraged to submit original articles, critical reviews, and perspectives on any of the above-listed topics.

We express our gratitude to the eminent scientists who, over the past six decades, have been inspired and guided by Moore's Law, contributing significantly to the advancement of science.

Prof. Dr. Sabina Merlo
Prof. Dr. Huikai Xie
Prof. Dr. Nam-Trung Nguyen
Guest Editors

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Keywords

  • basic structures of MEMS 
  • applications of MEMS 
  • processes of MEMS
  • bio-MEMS and related fields 
  • integrated circuits
  • integrated photonic circuits
  • semiconductor devices
  • 2D semiconductor materials
  • complementary metal–oxide–semiconductor (CMOS)
  • metal–oxide–semiconductor field-effect transistor (MOSFET)
  • nanotransistor
  • photodetectors
  • quantum devices
  • finFETs

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Published Papers (1 paper)

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Research

11 pages, 1701 KB  
Article
Design Strategies for Optimized Bulk-Linearized MOS Pseudo-Resistor
by Lorenzo Benatti, Tommaso Zanotti and Francesco Maria Puglisi
Micromachines 2025, 16(8), 941; https://doi.org/10.3390/mi16080941 - 16 Aug 2025
Viewed by 385
Abstract
The bulk linearization technique is a design strategy used to extend the linear region of a metal oxide semiconductor field effect transistor (MOSFET) by increasing its saturation voltage through a composite structure and a gate biasing circuit. This allows us to develop compact [...] Read more.
The bulk linearization technique is a design strategy used to extend the linear region of a metal oxide semiconductor field effect transistor (MOSFET) by increasing its saturation voltage through a composite structure and a gate biasing circuit. This allows us to develop compact and flexible pseudo-resistor elements for integrated circuit designs. In this paper we propose a new simple yet effective design approach, focused on the biasing circuit, that optimizes area, offset, and power consumption without altering the design complexity of the original solution. Post-layout simulations verify the presented design strategy, which is then applied for designing a band-pass filter for neural action potential acquisition. Results of harmonic distortion and noise analysis strengthen the validity of the proposed strategy. Full article
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