Search Results (925)

Graphene’s exceptional carrier mobility and broadband absorption make it promising for ultrafast photodetection. However, its low optical absorption limits responsivity, while the absence of a bandgap results in high dark current, constraining the signal-to-noise ratio and efficiency. Although silicon (Si) photodetectors normally offer fabrication compatibility, their performance is severely hindered by interface trap states and optical shading. To overcome these limitations, we demonstrate an epitaxial graphene/n-Si heterojunction photodiode. This device utilizes graphene epitaxially grown on germanium integrated with a transferred Si thin film, eliminating polymer residues and interface defects common in transferred graphene. As a result, the fabricated photodetector achieves an ultralow dark current of 1.2 × 10⁻⁹ A, a high responsivity of 1430 A/W, and self-powered operation at room temperature. This work provides a strategy for high-sensitivity and low-power photodetection and demonstrates the practical integration potential of graphene/Si heterostructures for advanced optoelectronics. Full article

Highly integrable silicon carbide (SiC) has emerged as a promising platform for photonic integrated circuits (PICs), offering a comprehensive set of material and optical properties that are ideal for the integration of nonlinear devices and solid-state quantum defects. However, despite significant progress in nanofabrication technology, the development of SiC on an insulator (SiCOI)-based photonics faces challenges due to fabrication-induced material optical losses and complex processing steps. An alternative approach to mitigate these fabrication challenges is the direct deposition of amorphous SiC on an insulator (a-SiCOI). However, there is a lack of systematic studies aimed at producing high optical quality a-SiC thin films, and correspondingly, on evaluating and determining their optical properties in the telecom range. To this end, we have studied a single-source precursor, 1,3,5-trisilacyclohexane (TSCH, C₃H₁₂Si₃), and chemical vapor deposition (CVD) processes for the deposition of SiC thin films in a low-temperature range (650–800 °C) on a multitude of different substrates. We have successfully demonstrated the fabrication of smooth, uniform, and stoichiometric a-SiCOI thin films of 20 nm to 600 nm with a highly controlled growth rate of ~0.5 Å/s and minimal surface roughness of ~5 Å. Spectroscopic ellipsometry and resonant micro-photoluminescence excitation spectroscopy and mapping reveal a high index of refraction (~2.7) and a minimal absorption coefficient (<200 cm⁻¹) in the telecom C-band, demonstrating the high optical quality of the films. These findings establish a strong foundation for scalable production of high-quality a-SiCOI thin films, enabling their application in advanced chip-scale telecom PIC technologies. Full article

We investigated the protective properties of ultrathin laminated coatings, comprising three pairs of Al₂O₃ and TiO₂ sublayers with coating thicknesses < 150 nm, deposited on AISI 310 stainless steel (SS) and Si (100) substrates at 80–500 °C by atomic layer deposition. The coatings were chemically etched and subjected to corrosion, ultrasound, and thermal shock tests. The coating etching resistance efficiency (R_e) was determined by measuring via XRF the change in the coating sublayer mass thickness after etching in hot 80% H₂SO₄. The maximum R_e values of ≥98% for both alumina and titania sublayers were obtained for the laminates deposited at 250–400 °C on both substrates. In these coatings, the titania sublayers were crystalline. The lowest R_e values of 15% and 50% for the alumina and titania sublayers, respectively, were measured for laminate grown at 80 °C on silicon. The coatings deposited at 160–200 °C demonstrated a delay in the increase of R_e values, attributed to the changes in the titania sublayers before full crystallization. Coatings grown at higher temperatures were also more resistant to ultrasound and liquid nitrogen treatments. In contrast, coatings deposited at 125 °C on SS had better corrosion protection, as demonstrated via electrochemical impedance spectroscopy and a standard immersion test in FeCl₃ solution. Full article

This paper presents a novel approach employing localized annealing through Joule heating to enhance the performance of Thin-Film Piezoelectric-on-Silicon (TPoS) MEMS resonators that are crucial for applications in sensing, energy harvesting, frequency filtering, and timing control. Despite recent advancements, piezoelectric MEMS resonators still suffer from anchor-related energy losses and limited quality factors (Qs), posing significant challenges for high-performance applications. This study investigates interface modification to boost the quality factor (Q) and reduce the motional resistance, thus improving the electromechanical coupling coefficient and reducing insertion loss. To balance the trade-off between device miniaturization and performance, this work uniquely applies DC current-induced localized annealing to TPoS MEMS resonators, facilitating metal diffusion at the interface. This process results in the formation of platinum silicide, modifying the resonator’s stiffness and density, consequently enhancing the acoustic velocity and mitigating the side-supporting anchor-related energy dissipations. Experimental results demonstrate a Q-factor enhancement of over 300% (from 916 to 3632) and a reduction in insertion loss by more than 14 dB, underscoring the efficacy of this method for reducing anchor-related dissipations due to the highest annealing temperature at the anchors. The findings not only confirm the feasibility of Joule heating for interface modifications in MEMS resonators but also set a foundation for advancements of this post-fabrication thermal treatment technology. Full article

Laser annealing of oxide functional thin films makes them compatible with substrates of various types, especially flexible materials. The effects of optical annealing on Ni-doped ZnO thin films were the subject of investigation and analysis in this study. Using pulsed laser deposition, we deposited polycrystalline ZnNiO films on sapphire and silicon substrates. The deposited film was annealed by laser heating. A continuous CO₂ laser was used for this purpose. The uniformly distributed long-wavelength radiation of the CO₂ laser can penetrate deeper from the surface of the thin film compared to short-wavelength lasers such as UV and IR lasers. After growth, optical post-annealing processes were applied to improve the conductive properties of the films. The crystallinity and surface morphology of the grown films and annealed films were analyzed using SEM, and their electrical parameters were evaluated using van der Pauw effect measurements. We used electrical conductivity measurements and investigated the photovoltaic properties of the ZnNiO film. After CO₂ laser annealing, changes in both the crystalline structure and surface appearance of ZnO were evident. Subsequent to laser annealing, the crystallinity of ZnO showed both change and degradation. High-power CO₂ laser annealing changed the structure to a mixed grain size. Surface nanostructuring occurred. This was confirmed by SEM morphological studies. After irradiation, the electrical conductivity of the films increased from 0.06 Sm/cm to 0.31 Sm/cm. The lifetime of non-equilibrium charge carriers decreased from 2.0·10⁻⁹ s to 1.2·10⁻⁹ s. Full article

In the field of high-altitude operations, the frequent occurrence of fall accidents is usually closely related to safety measures such as the incorrect use of safety locks and the wrong installation of safety belts. At present, the manual inspection method cannot achieve real-time monitoring of the safety status of the operators and is prone to serious consequences due to human negligence. This paper designs a new type of high-altitude operation safety device based on the STM32F103 microcontroller. This device integrates ultra-wideband (UWB) ranging technology, thin-film piezoresistive stress sensors, Beidou positioning, intelligent voice alarm, and intelligent safety lock. By fusing five modes, it realizes the functions of safety status detection and precise positioning. It can provide precise geographical coordinate positioning and vertical ground distance for the workers, ensuring the safety and standardization of the operation process. This safety device adopts multi-modal fusion high-altitude operation safety monitoring technology. The UWB module adopts a bidirectional ranging algorithm to achieve centimeter-level ranging accuracy. It can accurately determine dangerous heights of 2 m or more even in non-line-of-sight environments. The vertical ranging upper limit can reach 50 m, which can meet the maintenance height requirements of most transmission and distribution line towers. It uses a silicon carbide MEMS piezoresistive sensor innovatively, which is sensitive to stress detection and resistant to high temperatures and radiation. It builds a Beidou and Bluetooth cooperative positioning system, which can achieve centimeter-level positioning accuracy and an identification accuracy rate of over 99%. It can maintain meter-level positioning accuracy of geographical coordinates in complex environments. The development of this safety device can build a comprehensive and intelligent safety protection barrier for workers engaged in high-altitude operations. Full article

This work investigates the impact of an internal electric field on the annihilation characteristics of positrons implanted in a $180\left(10\right)\mathrm{nm}$ SiO₂ layer of a Metal-Oxide-Silicon (MOS) capacitor, using Positron Annihilation Lifetime Spectroscopy (PALS). By varying the gate voltage, electric fields up to $1.72\mathrm{MV}/\mathrm{cm}$ were applied. The measurements reveal a field-dependent suppression of positronium (Ps) formation by up to $64\%$, leading to an enhancement of free positron annihilation. The increase in free positrons suggests that vacancy clusters are the dominant defect type in the oxide layer. Additionally, drift towards the SiO₂/Si interface reveals not only larger void-like defects but also a distinct population of smaller traps that are less prominent when drifting to the Al/SiO₂ interface. In total, by combining positron drift with PALS, more detailed insights into the nature and spatial distribution of defects within the SiO₂ network and in particular near the SiO₂/Si interface are obtained. Full article

Precise photovoltaic (PV) performance modeling is essential for optimizing system design, operational monitoring, and reliable power forecasting—yet spectral correction is often overlooked, despite its significant impact on energy yield uncertainty. This study employs the FARMS-NIT model to assess the impact of spectral irradiance on eight PV technologies across 79 European sites, grouped by Köppen–Geiger climate classification. Unlike previous studies limited to clear-sky or single-site analysis, this work integrates satellite-derived spectral data for both all-sky and clear-sky scenarios, enabling hourly, tilt-optimized simulations that reflect real-world operating conditions. Spectral analyses reveal European climates exhibit blue-shifted spectra versus AM1.5 reference, only 2–5% resembling standard conditions. Thin-film technologies demonstrate superior spectral gains under all-sky conditions, though the underlying drivers vary significantly across climatic regions—a distinction that becomes particularly evident in the clear-sky analysis. Crystalline silicon exhibits minimal spectral sensitivity (<1.6% variations), with PERC/PERT providing highest stability. CZTSSe shows latitude-dependent performance with ≤0.7% variation: small gains at high latitudes and losses at low latitudes. Atmospheric parameters were analyzed in detail, revealing that air mass (AM), clearness index (K_t), precipitable water (W), and aerosol optical depth (AOD) play key roles in shaping spectral effects, with different parameters dominating in distinct climate groups. Full article

Multilayer thin films composed of cobalt (Co), carbon (C), and chromium (Cr) possess promising electromagnetic properties, yet the combined Co–C–Cr system remains underexplored, particularly regarding its performance as a microwave absorber. Existing research has primarily focused on binary Co–C or Co–Cr compositions, leaving a critical knowledge gap in understanding how ternary multilayer architectures influence electromagnetic behavior. This study addresses this gap by investigating the structure, phase composition, and microwave absorption performance of Co–C–Cr multilayer coatings fabricated via magnetron sputtering onto porous silicon substrates. This study compares four-layer and eight-layer configurations to assess how multilayer architecture affects impedance matching, reflection coefficients, and absorption characteristics within the 8.2–12.4 GHz frequency range. Structural analyses using X-ray diffraction and transmission electron microscopy confirm the coexistence of amorphous and nanocrystalline phases, which enhance absorption through dielectric and magnetic loss mechanisms. Both experimental and simulated results show that increasing the number of layers improves impedance gradients and broadens the operational bandwidth. The eight-layer coatings demonstrate a more uniform absorption response, while four-layer structures exhibit sharper resonant minima. These findings advance the understanding of ternary multilayer systems and contribute to the development of frequency-selective surfaces and broadband microwave shielding materials. Full article

This paper focuses on the switching and modulation techniques of terahertz waves, develops ${\mathrm{VO}}_2$ thin-film materials with an SPP structure, and uses terahertz time-domain spectroscopy (THz-TDS) to study the semiconductor–metal phase transition characteristics of ${\mathrm{VO}}_2$ thin films, especially the photoinduced semiconductor–metal phase transition characteristics of silicon-based ${\mathrm{VO}}_2$ thin films. The optical modulation characteristics of silicon-based ${\mathrm{VO}}_2$ thin films to terahertz waves under different light excitation modes, such as continuous light irradiation at different wavelengths and femtosecond pulsed laser irradiation, were analyzed. Combining the optical modulation characteristics of silicon-based ${\mathrm{VO}}_2$ thin films with the filtering characteristics of SPP structures, composite structures of ${\mathrm{VO}}_2$ thin films with metal hole arrays, composite structures of ${\mathrm{VO}}_2$ thin films with metal block arrays, and silicon-based ${\mathrm{VO}}_2$ microstructure arrays were designed. The characteristics of this dual-function device were tested experimentally. The experiment proves that the ${\mathrm{VO}}_2$ film material with an SPP structure has a transmission rate dropping sharply from 32% to 1% under light excitation; the resistivity changes by more than six orders of magnitude, and the modulation effect is remarkable. By applying the SPP structure to the ${\mathrm{VO}}_2$ material, the material can simultaneously possess modulation and filtering functions, enhancing its optical performance in the terahertz band. Full article

In this study, we present the design and electromagnetic performance optimization of a micro-electromechanical system (MEMS) miniature outer-rotor permanent magnet motor. With increased attention towards higher torque density and lower torque pulsations in MEMS micromotor designs, an adaptation of an external rotor can be highly attractive. However, with the design complexity involved in such high-performance MEMS outer-rotor motor designs, the ultra-miniature 3D coil structures and the thin-film topology surrounding the air gap have been one of the main challenges. In this study, an ultra-thin outer-rotor motor with 3D MEMS silicon-based coils and a MEMS-compatible manufacturing method for the 3D coils is presented. Additionally, finite element simulations are conducted for the thin-film topology around the air gap to optimize performance characteristics such as torque developed, torque pulsations, and back electromotive force amplitude. Ultimately, the average magnetic flux density increased by 37.1%, from 0.361 T to 0.495 T. The root mean square (RMS) value of the back EMF per phase rises by 14.4%. Notably, the average torque is improved by 11.3%, while the torque ripple is significantly reduced from 1.281 mNm to 0.74 mNm, corresponding to a reduction of 49.9% in torque ripple percentage. Full article

Integrated optical waveguide amplifiers, with their compact footprint, low power consumption, and scalability, are the basis for optical communications. The realization of high gain in such integrated devices is made more challenging by the tight optical constraints. In this work, we present efficient amplification in an erbium–ytterbium-based hybrid slot waveguide consisting of a silicon nitride waveguide and a thin-film active layer/electron-beam resist. The electron-beam resist as the upper cladding layer not only possesses the role of protecting the waveguide but also has tighter optical confinement in the vertical cross-section direction. On this basis, an accurate and comprehensive dynamic model of an erbium–ytterbium co-doped amplifier is realized by introducing quenched ions. A modal gain of above 20 dB is achieved at the signal wavelength of 1530 nm in a 1.4 cm long hybrid slot waveguide, with fractions of quenched ions f_q = 30%. In addition, the proposed hybrid waveguide amplifiers exhibit higher modal gain than conventional air-clad amplifiers under the same conditions. Endowing silicon nitride photonic integrated circuits with efficient amplification enriches the integration of various active functionalities on silicon. Full article

The research on ultra-thin inorganic chips is an important field in the development of inorganic flexible electronics. By thinning the inorganic (mainly silicon-based) chip to less than 50 μm, it will gain a certain degree of flexibility. After the ultra-thin chip is integrated into the flexible substrate, it is bent repeatedly during the operation of the system. When the bending angle is excessively large, the chip and substrate will debond, or the chip will break. In this process, whether the chip can be stably adhered to the substrate depends on many factors, and debonding can only be reduced by continuously adjusting the process parameters. From an energy method perspective, this study divides the bending process of flexible silicon-based chips and flexible films into two states: debonding and non-debonding. A debonding mechanical model of flexible chips is established, and the regulatory relationship between the adhesion coefficient between the chip and film, chip geometric size, and material parameters was established. Experiments were also conducted to verify the relevant theoretical results. The theoretical results show that the risk of chip debonding decreases with a reduction in chip thickness, an increase in interface adhesion, and an increase in bending radius. Improving the interface adhesion during the bending process can effectively stabilize the adhesion of flexible chips. This paper provides a theoretical basis for the integration and bending of ultra-thin flexible chips and flexible substrates, promoting the practical assembly and application of ultra-thin chips. Full article

This work presents a comparative analysis of the results of silicon carbide synthesis through the carbonization of Si (001) and Si (111) substrates in the temperature range 1130–1140 °C. The synthesis involved chemical vapor deposition utilizing thermally stimulated methane reduction in a hydrogen gas stream. The experiments employed an Oxford Nanofab Plasmalab System 100 apparatus on substrates from which the native oxide was removed according to established protocols. To minimize random experimental variations (e.g., deviations from set parameters), short synthesis durations of 3 and 5 min were analyzed. The resultant thin films underwent evaluations through several techniques, including X-ray photoelectron spectroscopy, X-ray diffractometry, optical emission spectroscopy with glow discharge, and transmission electron microscopy. A comparison and analysis were conducted between the results from both substrate orientations. Full article

There is considerable interest in broadband nanomaterials, particularly transparent semiconductor oxides, within both fundamental research and technological applications. Historically, it has been considered that the variation in dopant concentration during the synthesis of semiconductor materials is a crucial factor in activating and/or modulating the optical and structural properties, particularly the bandgap and the parameters of the unit cell, of semiconductor oxides. Recently, tin oxide has emerged as a key material due to its excellent structural properties, optical transparency, and various promising applications in optoelectronics. This study utilized the ultrasonic spray pyrolysis technique to synthesize aluminum-doped tin oxide (ATO) thin films on quartz and polished single-crystal silicon substrates. The impact of varying aluminum doping levels (0, 2, 5, and 10 at. %) on morphology and structural and optical properties was examined. The ATO thin films were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmittance spectroscopy. SEM images demonstrated a slight reduction in the size of ATO nanoparticles as the aluminum doping concentration increased. XRD analysis revealed a tetragonal crystalline structure with the space group P42/mnm, and a shift in the XRD peaks to higher angles was noted with increasing aluminum content, indicating a decrease in the crystalline lattice parameters of ATO. The transmittance of the ATO films varied between 75% and 85%. By employing the transmittance spectra and the established Tauc formula the optical bandgap values of ATO films were calculated, showing an increase in the bandgap with higher doping levels. These findings were thoroughly analyzed and discussed; additionally, an effort was made to clarify the contradictory analyses present in the literature and to identify a doping range that avoids the onset of a secondary phase. Full article