Sign in to use this feature.

Years

Between: -

Subjects

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline

Journals

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline

Article Types

Countries / Regions

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline

Search Results (2,061)

Search Parameters:
Keywords = power semiconductors

Order results
Result details
Results per page
Select all
Export citation of selected articles as:
15 pages, 4731 KB  
Article
AI-Assisted Multi-Physics Evaluation of Mission Profile-Based Traction Inverter Design for Sustainability
by Chi Zhang and Riccardo Negri
World Electr. Veh. J. 2026, 17(1), 43; https://doi.org/10.3390/wevj17010043 - 14 Jan 2026
Viewed by 34
Abstract
As the global transition toward carbon neutrality accelerates, the sustainability of power electronics has received growing attention from both academia and industry. Nevertheless, standardized methodologies for evaluating the sustainability of power electronic systems—particularly traction inverters—remain limited, largely due to the absence of comprehensive [...] Read more.
As the global transition toward carbon neutrality accelerates, the sustainability of power electronics has received growing attention from both academia and industry. Nevertheless, standardized methodologies for evaluating the sustainability of power electronic systems—particularly traction inverters—remain limited, largely due to the absence of comprehensive databases and unified assessment frameworks. Leveraging industrial extensive design experience, this paper presents an enhanced methodology for sustainability evaluation of traction inverters. The proposed framework combines advanced component-level modelling with multi-physics-based analysis to more accurately quantify the environmental impacts associated with different power semiconductor technologies. A Random Forest (RF)-based algorithm is employed for junction temperature (TJ) estimation, offering reliable thermal data crucial for sustainability assessment. Experimental validation on a prototype automotive inverter confirms the accuracy and robustness of the RF-based TJ estimation approach, ensuring realistic thermal–environmental coupling within the evaluation workflow. From a thermal perspective, the sizing of power electronics key components (PEKCs) is performed with high precision, enabling a more accurate estimation of power electronics-related material (PERM) usage. Combined with a preliminary CO2-equivalent (CO2e) emissions database, this allows sustainability assessment to be integrated directly into the design stage of the traction inverter. The effectiveness of the proposed approach is demonstrated through a comparative evaluation of three representative inverter topologies. Full article
Show Figures

Figure 1

18 pages, 2562 KB  
Article
Power Electronics for Aerospace Applications: An Experimental Validation with WBG Technologies
by Rosalina Morais, Ana Dias, Joao L. Afonso and Vitor Monteiro
Energies 2026, 19(2), 381; https://doi.org/10.3390/en19020381 - 13 Jan 2026
Viewed by 100
Abstract
Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers of power-electronics converters for aerospace platforms, where high efficiency, weight reduction, and thermal robustness are critical requirements. This paper presents the main challenges associated with the use [...] Read more.
Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers of power-electronics converters for aerospace platforms, where high efficiency, weight reduction, and thermal robustness are critical requirements. This paper presents the main challenges associated with the use of these technologies, including protection requirements, electromagnetic compatibility, and thermal management, as well as the material advantages that enable higher switching frequencies and lower losses compared to conventional Si technologies. A comparative analysis of semiconductor technologies and suitable power-conversion topologies for the aerospace context is provided. Representative laboratory-scale experimental validation is presented, including the development of a DC–DC boost converter and a DC–AC full-bridge inverter, which are linked through the common DC-link and are used for interfacing batteries and an electrical motor, both based on GaN and SiC diodes. The results demonstrated the correct operation, with stable high-frequency performance under controlled laboratory conditions, supporting aerospace-oriented development, although evaluated in a laboratory environment, confirming the potential of WBG technologies for future power-conversion architectures. Full article
(This article belongs to the Special Issue Power Electronics Technologies for Aerospace Applications)
Show Figures

Figure 1

16 pages, 8228 KB  
Article
A Detection Method for Seeding Temperature in Czochralski Silicon Crystal Growth Based on Multi-Sensor Data Fusion
by Lei Jiang, Tongda Chang and Ding Liu
Sensors 2026, 26(2), 516; https://doi.org/10.3390/s26020516 - 13 Jan 2026
Viewed by 72
Abstract
The Czochralski method is the dominant technique for producing power-electronics-grade silicon crystals. At the beginning of the seeding stage, an excessively high (or low) temperature at the solid–liquid interface can cause the time required for the seed to reach the specified length to [...] Read more.
The Czochralski method is the dominant technique for producing power-electronics-grade silicon crystals. At the beginning of the seeding stage, an excessively high (or low) temperature at the solid–liquid interface can cause the time required for the seed to reach the specified length to be too long (or too short). However, the time taken for the seed to reach a specified length is strictly controlled in semiconductor crystal growth to ensure that the initial temperature is appropriate. An inappropriate initial temperature can adversely affect crystal quality and production yield. Accurately evaluating whether the current temperature is appropriate for seeding is therefore essential. However, the temperature at the solid–liquid interface cannot be directly measured, and the current manual evaluation method mainly relies on a visual inspection of the meniscus. Previous methods for detecting this temperature classified image features, lacking a quantitative assessment of the temperature. To address this challenge, this study proposed using the duration of the seeding stage as the target variable for evaluating the temperature and developed an improved multimodal fusion regression network. Temperature signals collected from a central pyrometer and an auxiliary pyrometer were transformed into time–frequency representations via wavelet transform. Features extracted from the time–frequency diagrams, together with meniscus features, were fused through a two-level mechanism with multimodal feature fusion (MFF) and channel attention (CA), followed by masking using spatial attention (SA). The fused features were then input into a random vector functional link network (RVFLN) to predict the seeding duration, thereby establishing an indirect relationship between multi-sensor data and the seeding temperature achieving a quantification of the temperature that could not be directly measured. Transfer comparison experiments conducted on our dataset verified the effectiveness of the feature extraction strategy and demonstrated the superior detection performance of the proposed model. Full article
(This article belongs to the Section Physical Sensors)
Show Figures

Figure 1

35 pages, 6397 KB  
Review
A Review of Femtosecond Laser Processing for Sapphire
by Chengxian Liang, Jiecai Feng, Hongfei Liu, Yanning Sun, Yilian Zhang and Yingzhong Tian
Materials 2026, 19(1), 206; https://doi.org/10.3390/ma19010206 - 5 Jan 2026
Viewed by 351
Abstract
Sapphire (α-Al2O3) has been widely used in high-power lasers, optical windows, semiconductor substrates, radomes, and other applications due to its exceptional optical properties, high hardness, excellent chemical stability, and thermal resistance. However, machining sapphire poses significant challenges because of [...] Read more.
Sapphire (α-Al2O3) has been widely used in high-power lasers, optical windows, semiconductor substrates, radomes, and other applications due to its exceptional optical properties, high hardness, excellent chemical stability, and thermal resistance. However, machining sapphire poses significant challenges because of the material’s high hardness and brittleness. Traditional mechanical and chemical–mechanical machine methods often fail to meet the processing requirements for micro and nanoscale structures. Recently, the use of femtosecond lasers—with ultra-short pulses and extremely high peak power—has allowed for the precise machining of sapphire with minimal thermal damage, a method akin to cold processing. Femtosecond laser processing offers significant advantages in fabricating three-dimensional micro- and nanoscale structures, surface and internal modification, optical waveguide writing, grating fabrication and dissimilar materials welding. Thus, this paper systematically reviewed the research progress in femtosecond laser processing of sapphire, covering technical approaches such as ablation, hybrid processing and direct writing micro- and nanoscale fabrication. The capability of femtosecond laser processing to modulate sapphire’s optical properties, wettability and mechanical and chemical characteristics were discussed in detail. The current challenges related to efficiency, cost, process standardization and outlines future development directions, including high-power lasers, parallel processing, AI optimization and multifunctional integration were also analyzed. Full article
(This article belongs to the Special Issue Advances in Materials Processing (4th Edition))
Show Figures

Figure 1

41 pages, 9730 KB  
Review
In-Vehicle Gas Sensing and Monitoring Using Electronic Noses Based on Metal Oxide Semiconductor MEMS Sensor Arrays: A Critical Review
by Xu Lin, Ruiqin Tan, Wenfeng Shen, Dawu Lv and Weijie Song
Chemosensors 2026, 14(1), 16; https://doi.org/10.3390/chemosensors14010016 - 4 Jan 2026
Viewed by 302
Abstract
Volatile organic compounds (VOCs) released from automotive interior materials and exchanged with external air seriously compromise cabin air quality and pose health risks to occupants. Electronic noses (E-noses) based on metal oxide semiconductor (MOS) micro-electro-mechanical system (MEMS) sensor arrays provide an efficient, real-time [...] Read more.
Volatile organic compounds (VOCs) released from automotive interior materials and exchanged with external air seriously compromise cabin air quality and pose health risks to occupants. Electronic noses (E-noses) based on metal oxide semiconductor (MOS) micro-electro-mechanical system (MEMS) sensor arrays provide an efficient, real-time solution for in-vehicle gas monitoring. This review examines the use of SnO2-, ZnO-, and TiO2-based MEMS sensor arrays for this purpose. The sensing mechanisms, performance characteristics, and current limitations of these core materials are critically analyzed. Key MEMS fabrication techniques, including magnetron sputtering, chemical vapor deposition, and atomic layer deposition, are presented. Commonly employed pattern recognition algorithms—principal component analysis (PCA), support vector machines (SVM), and artificial neural networks (ANN)—are evaluated in terms of principle and effectiveness. Recent advances in low-power, portable E-nose systems for detecting formaldehyde, benzene, toluene, and other target analytes inside vehicles are highlighted. Future directions, including circuit–algorithm co-optimization, enhanced portability, and neuromorphic computing integration, are discussed. MOS MEMS E-noses effectively overcome the drawbacks of conventional analytical methods and are poised for widespread adoption in automotive air-quality management. Full article
(This article belongs to the Special Issue Detection of Volatile Organic Compounds in Complex Mixtures)
Show Figures

Graphical abstract

20 pages, 1157 KB  
Article
A Dynamic Physics-Guided Ensemble Model for Non-Intrusive Bond Wire Health Monitoring in IGBTs
by Xinyi Yang, Zhen Hu, Yizhi Bo, Tao Shi and Man Cui
Micromachines 2026, 17(1), 70; https://doi.org/10.3390/mi17010070 - 1 Jan 2026
Viewed by 258
Abstract
Bond wire degradation represents the predominant failure mechanism in IGBT modules, accounting for approximately 70% of power converter failures and posing significant reliability challenges in modern power electronic systems. Existing monitoring techniques face inherent trade-offs between measurement accuracy, implementation complexity, and electromagnetic compatibility. [...] Read more.
Bond wire degradation represents the predominant failure mechanism in IGBT modules, accounting for approximately 70% of power converter failures and posing significant reliability challenges in modern power electronic systems. Existing monitoring techniques face inherent trade-offs between measurement accuracy, implementation complexity, and electromagnetic compatibility. This paper proposes a physics-constrained ensemble learning framework for non-intrusive bond wire health assessment via Vce-on prediction. The methodological innovation lies in the synergistic integration of multidimensional feature engineering, adaptive ensemble fusion, and domain-informed regularization. A comprehensive 16-dimensional feature vector is constructed from multi-physical measurements, including electrical, thermal, and aging parameters, with novel interaction terms explicitly modeling electro-thermal stress coupling. A dynamic weighting mechanism then adaptively fuses three specialized gradient boosting models (CatBoost for high-current, LightGBM for thermal-stress, and XGBoost for late-life conditions) based on context-aware performance assessment. Finally, the meta-learner incorporates a physics-based regularization term that enforces fundamental semiconductor properties, ensuring thermodynamic consistency. Experimental validation demonstrates that the proposed framework achieves a mean absolute error of 0.0066 V and R2 of 0.9998 in predicting Vce-on, representing a 48.4% improvement over individual base models while maintaining 99.1% physical constraint compliance. These results establish a paradigm-shifting approach that harmonizes data-driven learning with physical principles, enabling accurate, robust, and practical health monitoring for next-generation power electronic systems. Full article
(This article belongs to the Special Issue Insulated Gate Bipolar Transistor (IGBT) Modules, 2nd Edition)
Show Figures

Figure 1

19 pages, 10771 KB  
Article
When Analog Electronics Extends Solar Life: Gate-Resistance Retuning for PV Reuse
by Euzeli C. dos Santos, Yongchun Ni, Fabiano Salvadori and Haitham Kanakri
Processes 2026, 14(1), 146; https://doi.org/10.3390/pr14010146 - 1 Jan 2026
Viewed by 343
Abstract
This paper proposes an analog retuning strategy that strengthens the functional longevity of photovoltaic (PV) systems operating within circular-economy environments. Although PV modules can be relocated from large generation sites to low-demand rural or remote settings, their electrical behavior offers no adjustable quantities [...] Read more.
This paper proposes an analog retuning strategy that strengthens the functional longevity of photovoltaic (PV) systems operating within circular-economy environments. Although PV modules can be relocated from large generation sites to low-demand rural or remote settings, their electrical behavior offers no adjustable quantities capable of extending service duration. In many cases, even after formal disposal or decommissioning, these solar panels still retain a considerable portion of their energy-generation capability and can operate for many additional years before their output becomes negligible, making second-life deployment both technically viable and economically attractive. In contrast, the associated power-electronic converters contain modifiable gate-driver parameters that can be reconfigured to moderate transient phenomena and lessen device stress. The method introduced here adjusts the external gate resistance in conjunction with coordinated switching-frequency adaptation, reducing overshoot, ringing, and steep dv/dt slopes while preserving the original switching-loss budget. A unified analytical framework connects stress mitigation, ripple evolution, and projected lifetime enhancement, demonstrating that deliberate analog tuning can substantially increase the endurance of aged semiconductor hardware without compromising suitability for second-life PV applications. Analytical results are supported by experimental validation, including hardware measurements of switching waveforms and energy dissipation under multiple gate-resistance configurations. Full article
Show Figures

Figure 1

20 pages, 5227 KB  
Article
Hydrazine-Induced Sulfur Vacancies Promote Interfacial Charge Redistribution in ZnS/Gel-Derived TiO2 for Enhanced CO2 Activation and Methanation
by Zhongwei Zhang, Shuai Liu, Jiefeng Yan, Yang Meng, Dongming Hu and Fuyan Gao
Gels 2026, 12(1), 39; https://doi.org/10.3390/gels12010039 - 31 Dec 2025
Viewed by 230
Abstract
Defect engineering in semiconductor heterojunctions offers a promising route for enhancing the selectivity of photocatalytic CO2 conversion. In this work, a ZnS/gel-derived TiO2 photocatalyst featuring sulfur vacancies introduced via hydrazine hydrate (N2H4) treatment is developed. XRD, HRTEM, [...] Read more.
Defect engineering in semiconductor heterojunctions offers a promising route for enhancing the selectivity of photocatalytic CO2 conversion. In this work, a ZnS/gel-derived TiO2 photocatalyst featuring sulfur vacancies introduced via hydrazine hydrate (N2H4) treatment is developed. XRD, HRTEM, and XPS analyses confirm the formation of a crystalline heterointerface and a defect-rich ZnS surface, enabling effective interfacial electronic modulation. The optimized ZnS/gel-derived TiO2-0.48 composite achieves CH4 and CO yields of 6.76 and 14.47 μmol·g−1·h−1, respectively, with a CH4 selectivity of 31.8% and an electron selectivity of 65.1%, clearly outperforming pristine TiO2 and the corresponding single-component catalysts under identical conditions. Photoluminescence quenching, enhanced photocurrent response, and reduced charge-transfer resistance indicate significantly improved interfacial charge separation. Mott–Schottky analysis combined with optical bandgap measurements reveals pronounced interfacial charge redistribution in the composite system. Considering the intrinsic band structure of ZnS and gel-derived TiO2, a Z-scheme-compatible interfacial charge migration model is proposed, in which photogenerated electrons with strong reductive power are preferentially retained on ZnS, while holes with strong oxidative capability remain on gel-derived TiO2. This charge migration pathway preserves high redox potentials, facilitating multi-electron CO2 methanation and water oxidation. Density functional theory calculations further demonstrate that sulfur vacancies stabilize *COOH and *CO intermediates and reduce the energy barrier for *COOH formation from +0.51 eV to +0.21 eV, thereby promoting CO2 activation and CH4 formation. These results reveal that sulfur vacancies not only activate CO2 molecules but also regulate interfacial charge migration behavior. This work provides a synergistic strategy combining defect engineering and interfacial electronic modulation to enhance selectivity and mechanistic understanding in CO2-to-CH4 photoconversion. Full article
(This article belongs to the Special Issue Gels for Removal and Adsorption (3rd Edition))
Show Figures

Figure 1

15 pages, 568 KB  
Article
Sustainable Markets Under Geopolitical Stress: Do ESG Indices Outperform Technology Indices in Resilience?
by Maria Czech
Sustainability 2026, 18(1), 374; https://doi.org/10.3390/su18010374 - 30 Dec 2025
Viewed by 703
Abstract
In the face of growing geopolitical instability, an important question remains whether ESG (Environmental, Social, and Corporate Governance) indices are sensitive to geopolitical shocks and whether they can act as protective assets. The aim of the study was to empirically compare the STOXX [...] Read more.
In the face of growing geopolitical instability, an important question remains whether ESG (Environmental, Social, and Corporate Governance) indices are sensitive to geopolitical shocks and whether they can act as protective assets. The aim of the study was to empirically compare the STOXX Global ESG Leaders index with the response of the technology sector (Nasdaq 100 and Philadelphia Semiconductor Index (SOX)) to changes in the geopolitical risk index (GPR). Monthly data from 2019 to 2025 were used, along with a procedure including Vector Autoregression (VAR) modeling, Impulse Response Function (IRF) analyses, the Johansen test, and Granger causality tests. The results indicate a lack of significant relationships between GPR and the analyzed indices in the short and long term: no cointegration was found, IRF responses were weak and quickly faded, and Granger tests did not demonstrate the predictive power of GPR for the analyzed markets. VAR forecasts additionally confirmed the stable trend, unrelated to GPR fluctuations. The results suggest that ESG indices are not directly affected by geopolitical shocks, which indicate their relative resilience. A similar response was observed for technological indices. The results may have practical implications for investors interested in sustainable investing while looking for stable assets in periods of global uncertainty. The results may be important for institutional investors in terms of portfolio stabilization functions during periods of increased geopolitical uncertainty, and for policymakers and market regulators in the context of designing frameworks supporting the stability of ESG markets. Full article
(This article belongs to the Special Issue ESG Investing for Sustainable Business: Exploring the Future)
Show Figures

Figure 1

30 pages, 16390 KB  
Review
Auger Electron Spectroscopy for Chemical Analysis of Passivated (Al,Ga)N-Based Systems
by Alina Domanowska and Bogusława Adamowicz
Micromachines 2026, 17(1), 47; https://doi.org/10.3390/mi17010047 - 30 Dec 2025
Viewed by 400
Abstract
This review summarizes the use of Auger Electron Spectroscopy (AES) for microchemical analysis of two different types of dielectric/(Al,Ga)N-based systems: (i) extrinsic dielectric PECVD SiO2, ALD Al2O3, and ECR-CVD SiNx films on AlxGa1−x [...] Read more.
This review summarizes the use of Auger Electron Spectroscopy (AES) for microchemical analysis of two different types of dielectric/(Al,Ga)N-based systems: (i) extrinsic dielectric PECVD SiO2, ALD Al2O3, and ECR-CVD SiNx films on AlxGa1−xN/GaN structures in the context of their application in microelectronic power devices and (ii) intrinsic Al2O3 films on AlN epitaxial layers grown by high-temperature oxidation for nanostructured technology of various gas/ion sensors. Particular attention is given to AES depth profiling across complete multilayer cross-sections, combining qualitative analysis of spectral line shape and intensity evolution as well as kinetic energy shifts with quantitative elemental depth distributions. This approach enables identification of chemical states and oxidation-related transformations at dielectric/semiconductor interfaces. Reported results demonstrate that AES provides micro- to nanometer-scale chemical information essential for distinguishing interfacial from the bulk properties. The capabilities and inherent limitations of AES depth profiling, including sputter-induced artifacts are also addressed, highlighting the role of optimized experimental conditions in reliable interface analysis. Full article
(This article belongs to the Special Issue GaN Power Devices: Recent Advances, Applications, and Perspectives)
Show Figures

Figure 1

16 pages, 5163 KB  
Article
CMOS-Compatible Micro Photovoltaic Generator with Post-Processing Enhanced Optical Absorption
by Hung-Wei Chen, Chi-Yuan Lee and Ching-Liang Dai
Micromachines 2026, 17(1), 48; https://doi.org/10.3390/mi17010048 - 30 Dec 2025
Viewed by 170
Abstract
This work reports the design and realization of a silicon-based micro photovoltaic generator (MPG) fabricated using a standard 0.18 μm complementary metal oxide semiconductor (CMOS) technology. The device harvests optical energy and converts it into electrical power through the photovoltaic effect, leveraging a [...] Read more.
This work reports the design and realization of a silicon-based micro photovoltaic generator (MPG) fabricated using a standard 0.18 μm complementary metal oxide semiconductor (CMOS) technology. The device harvests optical energy and converts it into electrical power through the photovoltaic effect, leveraging a network of engineered p–n junctions formed within the semiconductor. A grid-structured architecture is adopted, in which patterned p-type regions are embedded inside an n-well platform. This configuration expands the effective junction area, increases carrier-collection paths, and strengthens the internal electric field, thereby enhancing photocurrent generation. To further improve optical coupling, a specialized post-CMOS treatment is introduced. A wet etching is used to selectively remove the silicon dioxide layer that normally covers the junction regions in CMOS processes. Eliminating this dielectric layer enables direct photon penetration into the depletion region minimizes reflection-related losses, resulting in a significant improvement in device performance. Under an illumination intensity of 1000 W/m2, the fabricated microgenerator delivers an open-circuit voltage of 0.49 V, a short-circuit current of 239 µA, and a maximum output power of 90 µW. The device exhibits an overall energy conversion efficiency of 12.9%, confirming the effectiveness of the grid-like junction design and the post-processing oxide removal. Full article
(This article belongs to the Special Issue MEMS/NEMS Devices and Applications, 3rd Edition)
Show Figures

Figure 1

34 pages, 5698 KB  
Review
Optimizing Silicon MOSFETs: The Impact of DTCO and Machine Learning Techniques
by Ammar Tariq, Fortunato Neri, Valeria Cinnera Martino, Salvatore Rinaudo, Carmelo Corsaro and Enza Fazio
Electronics 2026, 15(1), 166; https://doi.org/10.3390/electronics15010166 - 29 Dec 2025
Viewed by 310
Abstract
In an era of rapid technological advancements and growing necessity for effective power management systems, the significance of silicon Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) in contemporary power electronics is more critical than ever. This review explores the advancements in silicon MOSFET technology through the [...] Read more.
In an era of rapid technological advancements and growing necessity for effective power management systems, the significance of silicon Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) in contemporary power electronics is more critical than ever. This review explores the advancements in silicon MOSFET technology through the lens of Design Technology Co-Optimization (DTCO). By integrating design and process technology strategies, DTCO optimizes power, performance, area, and cost (PPAC) metrics, addressing the limitations of traditional scaling methods. The manuscript presents an exhaustive analysis of the foundational principles of MOSFET technology, the progression of DTCO, and its implications on critical design metrics. The inclusion of machine learning techniques enhances the DTCO process, enabling vast simulations and efficient design iterations, which are crucial for navigating the complexities of advanced semiconductor device physics. Empirical evidence from TCAD simulations augmented by machine learning insights demonstrates the effectiveness of DTCO in enhancing device performance, reliability, and manufacturing yield. This review emphasizes the significance of DTCO and machine learning in addressing contemporary challenges and influencing the future trajectory of silicon MOSFET technology. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
Show Figures

Figure 1

44 pages, 6811 KB  
Review
Biomolecule–Photosensitizer Conjugates: A Strategy to Enhance Selectivity and Therapeutic Efficacy in Photodynamic Therapy
by Dominik M. Płaskonka, Dominik Barczyk, Paweł Repetowski, Marta Warszyńska and Janusz M. Dąbrowski
Pharmaceuticals 2026, 19(1), 65; https://doi.org/10.3390/ph19010065 - 29 Dec 2025
Viewed by 472
Abstract
Biomolecule–photosensitizer conjugates have rapidly evolved into one of the most powerful strategies for improving the selectivity, efficacy, and translational potential of photodynamic therapy (PDT). By integrating photosensitizers (PSs) with carbohydrates, amino acids, peptides, aptamers, proteins, cofactors, vitamins or antibodies, these constructs overcome long-standing [...] Read more.
Biomolecule–photosensitizer conjugates have rapidly evolved into one of the most powerful strategies for improving the selectivity, efficacy, and translational potential of photodynamic therapy (PDT). By integrating photosensitizers (PSs) with carbohydrates, amino acids, peptides, aptamers, proteins, cofactors, vitamins or antibodies, these constructs overcome long-standing limitations of classical PDT, including poor solubility, insufficient tumour accumulation, and strong dependence on oxygen availability. Beyond enhancing receptor-mediated uptake and enabling precise interactions with the tumour microenvironment (TME), bioconjugation also modulates aggregation, photochemical properties, intracellular accumulation, and immune system activation. A particularly transformative trend is the emergence of supramolecular architectures in which photosensitizers form defined nanostructured aggregates with peptides or proteins. Once considered an undesirable phenomenon, aggregation is now recognized as a tenable feature that governs photochemical behaviour. Engineered aggregates can undergo environment-triggered disassembly to monomeric, photoactive states, or operate as semiconductor-like nanodomains capable of Type I reaction through symmetry-breaking charge separation. This shift toward oxygen-independent radical pathways offers a promising solution to the challenge of hypoxia, a hallmark of the TME that severely compromises conventional Type II PDT. Parallel advances in 3D experimental platforms such as tumour organoids and organ-on-chip systems provide physiologically relevant validation of these conjugates, enabling the assessment of penetration, subcellular localization, immunogenic cell death, and therapeutic synergy within realistic TME conditions. Collectively, the integration of biomolecular targeting with controlled supramolecular design is redefining the landscape of PDT. Future progress will depend on designing conjugates that retain high activity under hypoxia, engineering dynamic aggregate states, and systematically validating these systems in advanced TME-mimetic models. Together, these developments position biomolecule–photosensitizer conjugates as a versatile and increasingly less oxygen-dependent class of next-generation phototherapeutic agents. Full article
(This article belongs to the Collection Feature Review Collection in Biopharmaceuticals)
Show Figures

Graphical abstract

30 pages, 1549 KB  
Article
An Overview of DC-DC Power Converters for Electric Propulsion
by Minghai Dong, Hui Li, Shan Yin, Bin Tian, Sulan Yang and Yuhua Chen
Aerospace 2026, 13(1), 36; https://doi.org/10.3390/aerospace13010036 - 29 Dec 2025
Viewed by 420
Abstract
Electric propulsion (EP) has become a pivotal technology in modern space exploration, enabling prolonged mission durations, increased payload capacity, and precise deep-space navigation through its superior thrust efficiency and low propellant consumption. However, the performance of EP systems is fundamentally limited by the [...] Read more.
Electric propulsion (EP) has become a pivotal technology in modern space exploration, enabling prolonged mission durations, increased payload capacity, and precise deep-space navigation through its superior thrust efficiency and low propellant consumption. However, the performance of EP systems is fundamentally limited by the power processing unit (PPU), with the DC-DC power converter serving as the core of the PPU. Existing research on DC-DC converters often focuses on generic topologies, failing to address the divergent power demands of distinct EP types and the harsh space-specific constraints. This review aims to fill this gap by systematically analyzing DC-DC power converters tailored for EP systems. First, the core requirements of converters across major EP categories are classified. Then, converter topologies are compared by evaluating the suitability for EP operational and space constraints. Moreover, high step-up conversion techniques are explored that bridge the gap between low-voltage spacecraft buses and thruster power needs. Furthermore, this review highlights emerging technologies driving EP converter advancement, such as wide-bandgap semiconductors for improved power density and efficiency, planar magnetics for miniaturization, and direct-drive architecture for simplified Hall-effect thruster integration. It also identifies unresolved challenges, including balancing power density with thermal robustness, mitigating radiation-induced degradation, and suppressing electromagnetic interference (EMI). Finally, it outlines future research directions, such as optimizing WBG-compatible converter topologies, developing advanced thermal management solutions, and standardizing EP-specific design guidelines. This work provides a practical reference for PPU engineers, linking converter design to EP unique demands and space constraints while guiding innovations to advance EP technology for next-generation space missions, from low-Earth orbit satellites to interplanetary exploration. Full article
(This article belongs to the Section Astronautics & Space Science)
Show Figures

Figure 1

20 pages, 9176 KB  
Article
Junction Temperature and Failure Behavior of High-Power Press Pack vs. Module Diodes Under High Anomalous Surge Currents
by Fawad Ahmad, Luis Vaccaro, Armel Asongu Nkembi, Mario Marchesoni, Federico Portesine and Giulio Anyanwu
Electronics 2026, 15(1), 121; https://doi.org/10.3390/electronics15010121 - 26 Dec 2025
Viewed by 289
Abstract
Junction temperature is considered a critical parameter that can directly affect the reliability and power handling capabilities of semiconductor devices. Effective thermal management, particularly under high-surge-current conditions, is therefore essential to maintain a lower junction temperature in order to enhance device performance and [...] Read more.
Junction temperature is considered a critical parameter that can directly affect the reliability and power handling capabilities of semiconductor devices. Effective thermal management, particularly under high-surge-current conditions, is therefore essential to maintain a lower junction temperature in order to enhance device performance and prevent device failure. Among various thermal management strategies, packaging technology plays an important role in optimizing junction temperature and enhancing the robustness of the device. In this article, a comparative analysis of high-power diodes is performed by investigating their junction temperature behavior and surge current handling capability. Moreover, an insulated module diode and a press-pack diode with pressure contact technology (PCT), both with identical specifications and power ratings, are selected for analysis. A 10 ms half-sine surge current waveform generator is developed both experimentally and in simulations to replicate realistic surge events. Experimental measurements of the forward voltage drop across varying surge levels are used to analyze device failure behavior. In addition, electro-thermal simulations are also employed in PSIM 2025.0 software to estimate and compare the temperature. Furthermore, this study enables practical insights into device thermal performance, robustness, and surge current handling capabilities, enabling a performance comparison between the two packaging technologies. Full article
(This article belongs to the Special Issue Advances in Semiconductor Devices and Applications)
Show Figures

Figure 1

Back to TopTop