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Feature Review Papers in Electronics
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Feature Review Papers in Electronics

A special issue of Electronics (ISSN 2079-9292).

Deadline for manuscript submissions: 31 December 2025 | Viewed by 16875

Special Issue Editors

Prof. Dr. Costas Psychalinos

E-Mail Website
Guest Editor
Department of Physics, Electronics Laboratory, University of Patras, 26504 Patras, Greece
Interests: fractional-order circuits and systems; analog integrated circuits; fractional-order biomedical circuits; fractional-order filters
Special Issues, Collections and Topics in MDPI journals
Dr. Zhengran He

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, Penn State Behrend, Erie, PA 16563, USA
Interests: machine learning; organic electronics; renewable energy
Prof. Dr. Victor Erokhin

E-Mail Website
Guest Editor
Institute of Materials for Electronics and Magnetism, Consiglio Nazionale delle Ricerche (IMEM-CNR), 43124 Parma, Italy
Interests: organic electronics; memristive devices
Prof. Dr. Byung-Gyu Kim

E-Mail Website
Guest Editor
Division of AI Engineering, Sookmyung Women's University, Seoul 04310, Republic of Korea
Interests: deep learning; multimedia processing; visual intelligence; emotion recognition
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

In the rapidly evolving field of electronics, staying abreast of the latest advancements and trends is crucial for researchers, engineers, and practitioners alike. This Special Issue, “Feature Review Papers in Electronics,” aims to publish cutting-edge reviews that explore electronics and its applications. We expect these papers to be widely read and highly influential.

Topics of interest include, but are not limited to:

  • Emerging trends in semiconductor devices and technology
  • Advances in integrated circuits and systems design
  • Novel approaches in signal processing and communication systems
  • Applications of artificial intelligence and machine learning in electronics
  • Photonics and optoelectronics advancements
  • Power electronics and energy-efficient systems
  • Internet of Things (IoT) devices and architectures
  • Wearable and flexible electronics
  • Biomedical electronics and healthcare applications.

Prof. Dr. Costas Psychalinos
Dr. Zhengran He
Prof. Dr. Victor Erokhin
Prof. Dr. Byung-Gyu Kim
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • circuit and signal processing
  • power electronics
  • semiconductor devices
  • electronic materials
  • microwave and wireless communications
  • computer science & engineering
  • artificial intelligence

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  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (9 papers)

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Review

23 pages, 7289 KiB  
Review
Analysis of Edge Termination Techniques for Gallium Nitride Pseudo-Vertical p-n Diodes: Modeling Based on Technology Computer-Aided Design and Review of Current Developments
by Mohammed El Amrani, Julien Buckley, Daniel Alquier, Philippe Godignon and Matthew Charles
Electronics 2025, 14(6), 1188; https://doi.org/10.3390/electronics14061188 - 18 Mar 2025
Viewed by 367
Abstract
Edge termination techniques play a crucial role in enhancing the breakdown voltage (BV) and managing electric field distribution in GaN-based power devices. This review explores six key termination methods—field plate (FP), mesa, bevel, trench, ion implantation, and guard ring (GR)—with a focus on [...] Read more.
Edge termination techniques play a crucial role in enhancing the breakdown voltage (BV) and managing electric field distribution in GaN-based power devices. This review explores six key termination methods—field plate (FP), mesa, bevel, trench, ion implantation, and guard ring (GR)—with a focus on their performance, fabrication complexity, and insights derived from TCAD simulations. FP and trench terminations excel in high-voltage applications due to their superior electric field control but are accompanied by significant fabrication challenges. Mesa and bevel terminations, while simpler and cost-effective, are more suited for medium-voltage applications. Ion implantation and GR techniques strike a balance, offering customizable parameters for improved BV performance. TCAD simulations provide a robust framework for analyzing these techniques, highlighting optimal configurations and performance trade-offs. The choice of edge termination depends on the specific application, balancing BV requirements with manufacturing feasibility. This review offers a comprehensive comparison, emphasizing the critical role of simulations in guiding the selection and design of edge termination techniques for GaN power devices. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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32 pages, 9855 KiB  
Review
A Review of Circuits and Systems for Advanced Sub-THz Transceivers in Wireless Communication
by Runzhou Chen, Boxun Yan and Mau-Chung Frank Chang
Electronics 2025, 14(5), 861; https://doi.org/10.3390/electronics14050861 - 21 Feb 2025
Viewed by 949
Abstract
Sub-terahertz (sub-THz) frequencies (100–300 GHz) are gaining prominence in the development of next-generation wireless communication systems, promising ultra-high data rates and wide bandwidths essential for applications like 6G networks and beyond. Despite the immense potential of these frequencies, several design and implementation challenges [...] Read more.
Sub-terahertz (sub-THz) frequencies (100–300 GHz) are gaining prominence in the development of next-generation wireless communication systems, promising ultra-high data rates and wide bandwidths essential for applications like 6G networks and beyond. Despite the immense potential of these frequencies, several design and implementation challenges remain, especially in transceiver architectures, high-order modulation, and beam-forming capabilities. In this paper, we survey recent advances in sub-THz transceiver design, with a particular focus on D-band frequencies. We explore the latest developments in circuit performance and architectures, including innovative transmitter and receiver designs that utilize direct-digital modulation (and demodulation) and phased-array systems. To ensure a comprehensive and up-to-date analysis, this work selects over 100 data points from top-tier conferences and journals, with most publications dating within the past five years, reflecting the state of the art in the field. Meanwhile, we discuss practical challenges, future directions, and opportunities to optimize sub-THz systems for high-speed, high-capacity wireless communication. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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31 pages, 2302 KiB  
Review
Low-Power Silicon-Based Frequency Dividers: An Overview
by Alessandro Badiali and Mattia Borgarino
Electronics 2025, 14(4), 652; https://doi.org/10.3390/electronics14040652 - 8 Feb 2025
Viewed by 3009
Abstract
Frequency divider circuits divide the frequency of an input signal by a specified ratio. They are critical components in analog, digital, and mixed-signal microelectronics. In power-constrained environments, such as cryogenic electronics or implanted biomedical devices, minimizing power consumption is crucial. This paper reviews [...] Read more.
Frequency divider circuits divide the frequency of an input signal by a specified ratio. They are critical components in analog, digital, and mixed-signal microelectronics. In power-constrained environments, such as cryogenic electronics or implanted biomedical devices, minimizing power consumption is crucial. This paper reviews operational principles, benefits, trade-offs, and circuit solutions of three main typologies of frequency divider: Current Mode Logic (CML), Injection-Locking (IL), and True Single-Phase Clock (TSPC). Distinct trade-offs between operation speed, power efficiency, complexity, and integration make each of them suitable for specific applications. Nevertheless, hybrid circuit solutions combining different typologies could potentially balance performance and energy efficiency. This paper thus also reports and discusses examples of hybrid frequency dividers. Examples of frequency dividers implemented in emerging technologies, such as the FinFETs CMOS, are addressed, as well. The purpose of this paper is to guide designers in selecting frequency divider solutions that best meet the design-specific requirements. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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17 pages, 1061 KiB  
Review
A Review of Emerging Sensor Technologies for Tank Inspection: A Focus on LiDAR and Hyperspectral Imaging and Their Automation and Deployment
by Sergio Pallas Enguita, Chung-Hao Chen and Samuel Kovacic
Electronics 2024, 13(23), 4850; https://doi.org/10.3390/electronics13234850 - 9 Dec 2024
Cited by 2 | Viewed by 1245
Abstract
This paper reviews various sensor technologies for tank inspection, focusing on Light Detection and Ranging (LiDAR) and Hyperspectral Imaging (HSI) as advanced solutions for corrosion detection. These technologies are evaluated alongside traditional methods such as ultrasonic, electromagnetic, and thermographic inspections. This review highlights [...] Read more.
This paper reviews various sensor technologies for tank inspection, focusing on Light Detection and Ranging (LiDAR) and Hyperspectral Imaging (HSI) as advanced solutions for corrosion detection. These technologies are evaluated alongside traditional methods such as ultrasonic, electromagnetic, and thermographic inspections. This review highlights their potential to enhance inspection accuracy, reduce the limitations of manual inspection, and support integrated data analysis for comprehensive asset management. Additionally, this paper proposes a pathway for automating these techniques to streamline inspection processes and improve implementation in practical applications. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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29 pages, 31535 KiB  
Review
Plasma Treatment Technologies for GaN Electronics
by Botong Li, Imteaz Rahaman, Hunter D. Ellis, Houqiang Fu, Yuji Zhao, Yong Cai, Baoshun Zhang and Kai Fu
Electronics 2024, 13(22), 4343; https://doi.org/10.3390/electronics13224343 - 6 Nov 2024
Viewed by 1746
Abstract
Nowadays, the third-generation semiconductor led by GaN has brought great changes to the semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown Electric field, and high electron mobility, GaN material is widely applied in areas such as 5G communication and electric [...] Read more.
Nowadays, the third-generation semiconductor led by GaN has brought great changes to the semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown Electric field, and high electron mobility, GaN material is widely applied in areas such as 5G communication and electric vehicles to improve energy conservation and reduce emissions. However, with the progress in the development of GaN electronics, surface and interface defects have become a main problem that limits the further promotion of their performance and stability, increasing leakage current and causing degradation in breakdown voltage. Thus, to reduce the damage, Plasma treatment technologies are introduced in the fabrication process of GaN electronics. Up to now, designs like the high-resistivity p-GaN cap Layer, passivating termination, and surface recovery process have been established via Plasma treatment, reaching the goals of normally-off transistors, diodes with high breakdown voltage and high-reliability GaN electronics, etc. In this article, hydrogen, fluorine, oxygen, and nitrogen Plasma treatment technologies will be discussed, and their application in GaN electronics will be reviewed and compared. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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27 pages, 4137 KiB  
Review
A Review of Advanced Thermal Interface Materials with Oriented Structures for Electronic Devices
by Yuqian Tu, Bin Liu, Guanghong Yao, Hongjie Luo, Xiao Jia, Jun Du and Cui Xu
Electronics 2024, 13(21), 4287; https://doi.org/10.3390/electronics13214287 - 31 Oct 2024
Viewed by 4083
Abstract
In high-power electronic devices, the rapid accumulation of heat presents significant thermal management challenges that necessitate the development of advanced thermal interface materials (TIMs) to ensure the performance and reliability of electronic devices. TIMs are employed to facilitate an effective and stable heat [...] Read more.
In high-power electronic devices, the rapid accumulation of heat presents significant thermal management challenges that necessitate the development of advanced thermal interface materials (TIMs) to ensure the performance and reliability of electronic devices. TIMs are employed to facilitate an effective and stable heat dissipation pathway between heat-generating components and heat sinks. In recent years, anisotropic one-dimensional and two-dimensional materials, including carbon fibers, graphene, and boron nitride, have been introduced as fillers in polymer-based TIMs due to their high thermal conductivity in specific directions. The orientation of the fillers in the polymer matrix has become an important issue in the development of a new generation of high-performance TIMs. To provide a systematic understanding of this field, this paper mainly discusses recent advances in advanced oriented TIMs with high thermal conductivity (>10 W/(m·K)). For each filler, its preparation strategies and enhancement mechanisms are analyzed separately, with a focus on the construction of oriented structures. Notably, there are few reviews related to carbon fiber TIMs, and this paper details recent research results in this field. Finally, the challenges, prospects, and future development directions of advanced TIMs are summarized in the hope of stimulating future research efforts. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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13 pages, 4921 KiB  
Review
Predicting Work-in-Process in Semiconductor Packaging Using Neural Networks: Technical Evaluation and Future Applications
by Chin-Ta Wu, Shing-Han Li and David C. Yen
Electronics 2024, 13(21), 4275; https://doi.org/10.3390/electronics13214275 - 31 Oct 2024
Viewed by 1290
Abstract
This review paper focuses on the application of neural networks in semiconductor packaging, particularly examining how the Back Propagation Neural Network (BPNN) model predicts the work-in-process (WIP) arrival rates at various stages of semiconductor packaging processes. Our study demonstrates that BPNN models effectively [...] Read more.
This review paper focuses on the application of neural networks in semiconductor packaging, particularly examining how the Back Propagation Neural Network (BPNN) model predicts the work-in-process (WIP) arrival rates at various stages of semiconductor packaging processes. Our study demonstrates that BPNN models effectively forecast WIP quantities at each processing step, aiding production planners in optimizing machine allocation and thus reducing product manufacturing cycles. This paper further explores the potential applications of neural networks in enhancing production efficiency, forecasting capabilities, and process optimization within the semiconductor industry. We discuss the integration of real-time data from manufacturing systems with neural network models to enable more accurate and dynamic production planning. Looking ahead, this paper outlines prospective advancements in neural network applications for semiconductor packaging, emphasizing their role in addressing the challenges of rapidly changing market demands and technological innovations. This review not only underscores the practical implementations of neural networks but also highlights future directions for leveraging these technologies to maintain competitiveness in the fast-evolving semiconductor industry. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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31 pages, 1501 KiB  
Review
Hybridization of Learning Techniques and Quantum Mechanism for IIoT Security: Applications, Challenges, and Prospects
by Ismaeel Abiodun Sikiru, Ahmed Dooguy Kora, Eugène C. Ezin, Agbotiname Lucky Imoize and Chun-Ta Li
Electronics 2024, 13(21), 4153; https://doi.org/10.3390/electronics13214153 - 23 Oct 2024
Cited by 2 | Viewed by 1644
Abstract
This article describes our point of view regarding the security capabilities of classical learning algorithms (CLAs) and quantum mechanisms (QM) in the industrial Internet of Things (IIoT) ecosystem. The heterogeneity of the IIoT ecosystem and the inevitability of the security paradigm necessitate a [...] Read more.
This article describes our point of view regarding the security capabilities of classical learning algorithms (CLAs) and quantum mechanisms (QM) in the industrial Internet of Things (IIoT) ecosystem. The heterogeneity of the IIoT ecosystem and the inevitability of the security paradigm necessitate a systematic review of the contributions of the research community toward IIoT security (IIoTsec). Thus, we obtained relevant contributions from five digital repositories between the period of 2015 and 2024 inclusively, in line with the established systematic literature review procedure. In the main part, we analyze a variety of security loopholes in the IIoT and categorize them into two categories—architectural design and multifaceted connectivity. Then, we discuss security-deploying technologies, CLAs, blockchain, and QM, owing to their contributions to IIoTsec and the security challenges of the main loopholes. We also describe how quantum-inclined attacks are computationally challenging to CLAs, for which QM is very promising. In addition, we present available IIoT-centric datasets and encourage researchers in the IIoT niche to validate the models using the industrial-featured datasets for better accuracy, prediction, and decision-making. In addition, we show how hybrid quantum-classical learning could leverage optimal IIoTsec when deployed. We conclude with the possible limitations, challenges, and prospects of the deployment. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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14 pages, 2788 KiB  
Review
A Review of Current Differencing Buffered Amplifiers: Performance Metrics and Technological Advances
by Shekhar Suman Borah and Prabha Sundaravadivel
Electronics 2024, 13(18), 3623; https://doi.org/10.3390/electronics13183623 - 12 Sep 2024
Cited by 1 | Viewed by 1121
Abstract
Current Differencing Buffered Amplifiers (CDBAs) are a critical class of analog circuit components capable of handling both current and voltage signals with minimal power consumption. Due to their low impedance voltage output, they play a significant role in modern electronics for developing high-performance, [...] Read more.
Current Differencing Buffered Amplifiers (CDBAs) are a critical class of analog circuit components capable of handling both current and voltage signals with minimal power consumption. Due to their low impedance voltage output, they play a significant role in modern electronics for developing high-performance, high-precision analog and mixed-signal circuits. But, designing and characterizing CDBAs pose several challenges, such as ensuring stability at high frequencies, minimizing noise impact for high-precision applications, and enhancing adaptability. Integrating CDBAs with other analog components to create multifunctional integrated circuits opens many opportunities in the analog signal-processing domain. This paper reviews the evolution and applications of CDBAs in analog signal processing. Various implementation schemes, including those using commercial Current Feedback Amplifiers (CFAs) and novel CMOS configurations, are analyzed for their performance metrics such as supply voltage, power dissipation, input/output impedances, and technology node. Future trends and challenges in advancing CDBA technology towards higher integration and lower-voltage operation are discussed, highlighting potential applications in next-generation electronics. Full article
(This article belongs to the Special Issue Feature Review Papers in Electronics)
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