GaN Power Devices: Recent Advances, Applications, and Perspectives
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: closed (30 November 2025) | Viewed by 2399
Special Issue Editors
Interests: GaN power devices; interface states; semiconductor physics
Special Issue Information
Dear Colleagues,
In recent years, remarkable progress has been made in the development of lateral and vertical gallium nitride (GaN)-based power devices. In particular, high-performance lateral multi-channel AlGaN/GaN Schottky barrier diodes with a breakdown voltage over 10 kV, vertical p–n diodes with a blocking voltage greater than 6 kV and very high Baliga's figure-of-merits, vertical junction barrier Schottky diodes with a low on-resistance below than 1 mΩ·cm2, and vertical FETs with a blocking voltage greater than 1 kV and specific on-resistances less than 2 mΩ·cm2 have been successfully demonstrated. In addition, various novel GaN-based edge termination structures have been proposed and demonstrated, including moat etch termination, a hydrogen plasma-based edge termination structure, a NiO junction termination extension (JTE) structure, a step-etched JTE structure, Mg-ion implanted field limiting rings, and a Mg-ion implanted bevel edge termination structure.
The aim of this Special Issue is to present high-quality contributions that address the latest challenges in GaN power devices and applications. The topics of interest include, but are not limited to, the following themes:
- Novel edge termination methods and techniques;
- Novel device architectures and concepts;
- Fabrication technology, reliability, and characterization;
- Simulation and design.
Dr. Maciej Matys
Prof. Dr. Tetsu Kachi
Guest Editors
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Keywords
- lateral and vertical GaN Power devices
- edge termination for GaN Power devices
- TCAD modeling of GaN power devices
- characterization and processing technology of GaN power electronics
- reliability
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