Search Results (301)

To improve the efficiency and stability of the system, this paper proposes a monolithic integrated optical path design for a cavity optomechanical accelerometer based on a 250 nm top silicon thickness silicon-on-insulator (SOI) wafer instead of readout through U-shape fiber coupling. Finite Element Analysis (FEA) and Finite-Difference Time-Domain (FDTD) methods are employed to systematically investigate the performance of key optical structures, including the resonant modes and bandgap characteristics of photonic crystal (PhC) microcavities, transmission loss of strip waveguides, coupling efficiency of tapered-lensed fiber-to-waveguide end-faces, coupling characteristics between strip waveguides and PhC waveguides, and the coupling mechanism between PhC waveguides and microcavities. Simulation results demonstrate that the designed PhC microcavity achieves a quality factor (Q-factor) of 2.26 × 10⁵ at a 1550 nm wavelength while the optimized strip waveguide exhibits a low loss of merely 0.2 dB over a 5000 μm transmission length. The strip waveguide to PhC waveguide coupling achieves 92% transmittance at the resonant frequency, corresponding to a loss below 0.4 dB. The optimized edge coupling structure exhibits a transmittance of 75.8% (loss < 1.2 dB), with a 30 μm coupling length scheme (60% transmittance, ~2.2 dB loss) ultimately selected based on process feasibility trade-offs. The total optical path system loss (input to output) is 5.4 dB. The paper confirms that the PhC waveguide–microcavity evanescent coupling method can effectively excite the target cavity mode, ensuring optomechanical coupling efficiency for the accelerometer. This research provides theoretical foundations and design guidelines for the fabrication of high-precision monolithic integrated cavity optomechanical accelerometers. Full article

Metal–organic frameworks (MOFs), particularly ZIF-8, have emerged as promising materials due to their high porosity, tunability, and chemical stability. In this study, we report the synthesis of ZnFe₂O₃-doped ZIF-8 composites with 10 wt% loading via a solvothermal method to enhance their optical and photocatalytic performance. Structural analyses confirmed the successful incorporation of ZnFe₂O₃ without disrupting the ZIF-8 framework. Optical studies revealed enhanced absorption in the visible range, a narrowed bandgap (4.26 eV vs. 4.37 eV for pristine ZIF-8), and an increased extinction coefficient, indicating superior light-harvesting potential. The photocatalytic activity was evaluated by methylene blue (MB) degradation under visible light, where the 10 wt% ZnFe₂O₃-ZIF-8 composite achieved 90% degradation efficiency, outperforming pristine ZIF-8 (67.8%). The catalyst also demonstrated excellent recyclability over five cycles and a proposed degradation mechanism involving ·OH and ·O₂⁻ radical formation. These findings demonstrate the potential of highly doped ZnFe₂O₃@ZIF-8 composites for environmental remediation and photonic applications. Full article

Monolayer (ML) molybdenum disulfide (MoS₂) is a typical valleytronic material which has important applications in, for example, polarization optics and information technology. In this study, we examine the effect of continuous wave (CW) laser pumping on the basic optoelectronic properties of ML MoS₂ placed on a sapphire substrate, where the pump photon energy is larger than the bandgap of ML MoS₂. The pump laser source is provided by a compact semiconductor laser with a 445 nm wavelength. Through the measurement of THz time-domain spectroscopy, we obtain the complex optical conductivity for ML MoS₂, which are found to be fitted exceptionally well with the Drude–Smith formula. Therefore, we expect that the reduction in conductivity in ML MoS₂ is mainly due to the effect of electronic backscattering or localization in the presence of the substrate. Meanwhile, one can optically determine the key electronic parameters of ML MoS₂, such as the electron density n_e, the intra-band electronic relaxation time τ, and the photon-induced electronic localization factor c. The dependence of these parameters upon CW laser pump intensity is examined here at room temperature. We find that 445 nm CW laser pumping results in the larger n_e, shorter τ, and stronger c in ML MoS₂ indicating that laser excitation has a significant impact on the optoelectronic properties of ML MoS₂. The origin of the effects obtained is analyzed on the basis of solid-state optics. This study provides a unique and tractable technique for investigating photo-excited carriers in ML MoS₂. Full article

Dye-sensitized solar cells (DSSCs) are promising alternatives for power generation due to their environmental friendliness, cost effectiveness, and strong performance under diffused light. Conversely, their low spectral response in the ultraviolet (UV) region significantly obliterates their overall performance. The so-called luminescent down-shifting (LDS) presents a practical solution by converting high-energy UV photons into visible light that can be efficiently absorbed by sensitizer dyes. Herein, a conventional solid-state technique was applied for the synthesis of an LDS, europium (II)-doped barium orthosilicate (BaSiO₃:Eu²⁺) material. The material exhibited strong UV absorption, with prominent peaks near 400 nm and within the 200–300 nm range, despite a weaker response in the visible region. The estimated optical bandgap was 3.47 eV, making it well-suited for UV absorbers. Analysis of the energy transfer mechanism from the LDS material to the N719 dye sensitizer depicted a strong spectral overlap of $2\times {10}^{10}{\mathrm{M}}^{-1}{\mathrm{c}\mathrm{m}}^{-1}{\mathrm{n}\mathrm{m}}^4$, suggesting efficient energy transfer from the donor to the acceptor. The estimated Förster distance was approximately $6.83\mathrm{n}\mathrm{m}$, which matches the absorption profile of the dye-sensitizer. Our findings demonstrate the potential of BaSiO₃:Eu²⁺ as an effective LDS material for enhancing UV light absorption and improving DSSC performance through increased spectral utilization and reduced UV-induced degradation. Full article

Nickel (Ni) ultrathin films exhibit phase-dependent electrical, magnetic, and optical characteristics that are significantly influenced by deposition methods. However, these films are inherently prone to rapid oxidation, with the oxidation rate dependent on substrate, temperature, and deposition parameters. The focus of this research is to investigate the temporal oxidation of RF-sputtered Ni ultrathin films on Corning glass under ambient atmospheric conditions and its impact on their structural, surface, and optical characteristics. Controlled film thicknesses were achieved through precise manipulation of deposition parameters, enabling the analysis of oxidation-induced modifications. Atomic force microscopy (AFM) revealed that films with high structural integrity and surface uniformity are exhibiting roughness values (Rq) from 0.679 to 4.379 nm of corresponding thicknesses ranging from 4 to 85 nm. Scanning electron microscopy (SEM) validated the formation of Ni grains interspersed with NiO phases, facilitating SPR-like effects. UV-visible spectroscopy is demonstrating thickness-dependent spectral (plasmonic peak) shifts. Finite Difference Time Domain (FDTD) simulations corroborate the observed thickness-dependent optical absorbance and the resultant shifts in the absorbance-induced plasmonic peak position and bandgap. Increased NiO presence primarily drives the enhancement of electromagnetic (EM) field localization and the direct impact on power absorption efficiency, which are modulated by the tunability of the plasmonic peak position. Our work demonstrates that controlled fabrication conditions and optimal film thickness selection allow for accurate manipulation of the Ni oxidation process, significantly altering their optical properties. This enables the tailoring of these Ni films for applications in transparent conductive electrodes (TCEs), magneto-optic (MO) devices, spintronics, wear-resistant coatings, microelectronics, and photonics. Full article

Transition metal dichalcogenide (TMD) materials have demonstrated promising potential for applications in photodetection due to their tunable bandgaps, high carrier mobility, and strong light absorption capabilities. However, limited by their intrinsic bandgaps, TMDs are unable to efficiently absorb photons with energies below the bandgap, resulting in a significant attenuation of photoresponse in spectral regions beyond the bandgap. This inherently restricts their broadband photodetection performance. By introducing metasurface structures consisting of subwavelength optical elements, localized plasmon resonance effects can be exploited to overcome this absorption limitation, significantly enhancing the light absorption of TMD films. Additionally, the heterogeneous integration process between the metasurface and two-dimensional materials offers low-temperature compatibility advantages, effectively avoiding the limitations imposed by high-temperature doping processes in traditional semiconductor devices. Here, we systematically investigate metasurface-enhanced two-dimensional MoSe₂ photodetectors, demonstrating broadband responsivity extension into the mid-infrared spectrum via precise control of metasurface structural dimensions. The optimized device possesses a wide spectrum response ranging from 808 nm to 10 μm, and the responsivity (R) and specific detection rate (D*) under 4 μm illumination achieve 7.1 mA/W and 1.12 × 10⁸ Jones, respectively. Distinct metasurface configurations exhibit varying impacts on optical absorption characteristics and detection spectral ranges, providing experimental foundations for optimizing high-performance photodetectors. This work establishes a practical pathway for developing broadband optoelectronic devices through nanophotonic structure engineering. Full article

This study of the BaSO₄-Bi phosphor has revealed that the accumulated energy after external optical excitation exhibits specific characteristics. During irradiation with photon energy exceeding the bandgap, in addition to the intrinsic ultraviolet emission of the Bi³⁺ ion, several recombination emissions and emission from the Bi²⁺ ion are observed. At 80 K, the recombination luminescence states and Bi²⁺ ion emission form combined electronic states. Upon heating of the BaSO₄-Bi phosphor, these combined electronic states decay into recombination emissions at 2.34 eV, 2.4 eV, 3.1 eV, and 2.7 eV, as well as Bi²⁺ ion emission at 1.97 eV. It is assumed that the 2.34 eV, 2.4 eV, and 3.1 eV emissions are associated with the recombination of electrons released from ionized ${SO}_4^{3-}$ electron trapping centers with nonequivalently localized holes in the host lattice. The 2.7 eV emission is attributed to the decay of an exciton formed by electron–hole recombination near a Bi³⁺ ion. Full article

Perovskite quantum dots (PVK QDs) are gaining significant attention as potential materials for next-generation memory devices leveraged by their ion dynamics, quantum confinement, optoelectronic synergy, bandgap tunability, and solution-processable fabrication. In this review paper, we explore the fundamental characteristics of organic/inorganic halide PVK QDs and their role in resistive switching memory architectures. We provide an overview of halide PVK QDs synthesis techniques, switching mechanisms, and recent advancements in memristive applications. Special emphasis is placed on the ionic migration and charge trapping phenomena governing resistive switching, along with the prospects of photonic memory devices that leverage the intrinsic photosensitivity of PVK QDs. Despite their advantages, challenges such as stability, scalability, and environmental concerns remain critical hurdles. We conclude this review with insights into potential strategies for enhancing the reliability and commercial viability of PVK QD-based memory technologies. Full article

The Al-Sb co-doped SnO₂ composite thin films were prepared by the sol–gel spin-coating method. The structure, morphology, optical and electrical properties of the samples were investigated using XRD, XPS, SEM, UV-Vis spectroscopy, and Hall effect tester, respectively. It was found that when the aluminum doping amount was 15 at%, the resistivity of the sample was the lowest, and the overall optoelectronic performance was the best. Moreover, the Al-SnO₂ composite thin film transformed from an n-type semiconductor to a p-type semiconductor. When Al and Sb were co-doped, the carrier concentration increased significantly from 4.234 × 10¹⁹ to 6.455 × 10²⁰. Finally, the conduction type of the Al-Sb-SnO₂ composite thin film changed from p-type to n-type. In terms of optical performance, the transmittance of the Al-Sb co-doped SnO₂ composite thin films in the visible light region was significantly improved, reaching up to 80% on average, which is favorable for applications in transparent optoelectronic devices. Additionally, the absorption edge of the thin films exhibited a blue-shift after co-doping, indicating an increase in the bandgap energy, which can be exploited to tune the light-absorption properties of the thin films for specific photonic applications. Full article

In this study, the photonic band structure, transmissivity, and electric field distribution of a two-dimensional photonic crystal coupled waveguide structure are calculated using the supercell technique and finite element method. The waveguide consists of circular $KNb{O}_3$ and functional dielectric cylinders embedded in air. The dielectric constant of a functional medium cylinder is spatially dependent, which is realized through the electro-optic and Kerr effects. The dielectric constant function is defined as ${\epsilon }_c\left(r\right)=k·r+b$ ($0⩽r⩽r_c$), where the coefficient k and parameter b can be adjusted by an external electric field. By tuning k and b, the transmission characteristics of the waveguide, including the propagation direction and light field distribution, exhibit significant adjustability. Specifically, parameter b enhances or suppresses the transmissivity at output ports 1 and 2. By utilizing the regulatory capability of functional media on waveguide transmission characteristics, optical filters with specific filtering functions can be designed. These findings provide novel design strategies for advanced optical devices. Full article

Novel wide-bandgap ZnO, BeO, and ZnBeO materials have recently gained considerable interest due to their stellar optoelectronic properties. These semiconductors are being used in developing high-resolution, flexible, transparent nanoelectronics/photonics and achieving high-power radio frequency modules for sensors/biosensors, photodetectors/solar cells, and resistive random-access memory applications. Despite earlier evidence of attaining p-type wz ZnO with N doping, the problem persists in achieving reproducible p-type conductivity. This issue is linked to charging compensation by intrinsic donors and/or background impurities. In ZnO: Al (Li), the vibrational features by infrared and Raman spectroscopy have been ascribed to the presence of isolated ${\mathrm{A}\mathrm{l}}_{\mathrm{Z}\mathrm{n}}{(\mathrm{L}\mathrm{i}}_{\mathrm{Z}\mathrm{n}})$ defects, nearest-neighbor (NN) ${[\mathrm{A}\mathrm{l}}_{\mathrm{Z}\mathrm{n}}{-\mathrm{N}}_{\mathrm{O}}$] pairs, and second NN ${[\mathrm{A}\mathrm{l}}_{\mathrm{Z}\mathrm{n}}{-\mathrm{O}-\mathrm{L}\mathrm{i}}_{\mathrm{Z}\mathrm{n}};{\mathrm{V}}_{\mathrm{Z}\mathrm{n}}-\mathrm{O}{-\mathrm{L}\mathrm{i}}_{\mathrm{Z}\mathrm{n}}]$ complexes. However, no firm identification has been established. By integrating accurate perturbation models in a realistic Green’s function method, we have meticulously simulated the impurity vibrational modes of ${\mathrm{A}\mathrm{l}}_{\mathrm{Z}\mathrm{n}}$${(\mathrm{L}\mathrm{i}}_{\mathrm{Z}\mathrm{n}})$ and their bonding to form complexes with dopants as well as intrinsic defects. We strongly feel that these phonon features in doped ZnO will encourage spectroscopists to perform similar measurements to check our theoretical conjectures. Full article

Despite significant progress, fabricating two-dimensional (2D) lithium niobate (LN)-based photonic crystal (PhC) cavities integrated with tapered and PhC waveguides remains challenging, due to structural imperfections. Notable, especially, are variations in hole radius (r) and inclination angle (°), which induce bandgap shifts and degrade quality factors (Q-factor). These fabrication errors underscore the critical need to address nanoscale tolerances. Here, we systematically investigate the impacts of key geometric parameters on optical performance and optimize a 2D LN-based cavity integrated with taper and PhC waveguide system. Using a 3D Finite-Difference Time-Domain (FDTD) and varFDTD simulations, we identify stringent fabrication thresholds. The a must exceed 0.72 µm to sustain Q > ${10}^7$; reducing a to 0.69 µm collapses Q-factors below ${10}^4$, due to under-coupled modes and bandgap misalignment, which necessitates ±0.005 µm precision. When an r < 0.22 µm weakens confinement, Q plummets to 2 × ${10}^4$ at r = 0.20 µm (±0.01 µm etching tolerance). Inclination angles < 70° induce 100× Q-factor losses, requiring ±2° alignment for symmetric modes. Air slot width (s) variations shift resonant wavelengths and require optimization in coordination with the inclination angle. By optimizing s and the inclination angle (at 70°), we achieve a record Q-factor of 6.21 ×${10}^6$, with, in addition, C-band compatibility (1502–1581 nm). This work establishes rigorous design–fabrication guidelines, demonstrating the potential for LN-based photonic devices with high nano-fabrication robustness. Full article

Rare-earth (RE) doping has been found to be a potent method to improve the structural, optical, electronic, and magnetic properties of ZnO, positioning it as a versatile material for future optoelectronic devices. This review herein thoroughly discusses the latest developments in RE-doped ZnO based on the role of the dopant type, concentration, synthesis method, and consequences of property modifications. The 4f electronic states of rare-earth elements create strong visible emissions, control charge carriers, and design defects. These structural changes lead to tunable bandgap energies and increased light absorption. Also, RE doping considerably enhances ZnO’s performance in electronic devices, like UV photodetectors, LEDs, TCOs, and gas sensors. Though, challenges like solubility constraints and lattice distortions at higher doping concentrations are still key challenges. Co-doping methodologies and new synthesis techniques to further optimize the incorporation of RE into ZnO matrices are also reviewed in this article. By showing a systematic comparison of different RE-doped ZnO systems, this paper sheds light on their future optoelectronic applications. The results are useful for the design of advanced ZnO-based materials with customized functionalities, which will lead to enhanced device efficiency and new photonic applications. Full article

This study presents the development of a high-speed, broadband InGaAs/InP photodiode suitable for advanced sensing and optical detection applications across the critical wavelength range of 850–1550 nm. By employing an InAlAs window layer to replace conventional InP, the device significantly improves sensitivity at 850 nm. Additionally, the substitution of traditional GaAs-based materials with InGaAs enhances responsivity and reduces carrier transit times, enabling precise, high-speed signal detection. The introduction of InGaAsP graded bandgap layers (GBLs) further improves device reliability and reduces absorption losses associated with defects, thus enhancing overall sensing performance. The fabricated photodiode, featuring an active area diameter of 35 µm, achieves high bandwidths of 20 GHz, 15 GHz, and 15.5 GHz at 850 nm, 1310 nm, and 1550 nm, respectively, along with responsivities of 0.5 A/W, 0.72 A/W, and 0.64 A/W. These characteristics make the device well suited for integration into multi-wavelength optical sensing systems, broadband photonic sensors, and high-speed optical communication platforms. Full article

We investigate the influence of non-vertical sidewall angles on the band structure characteristics of thin-film lithium niobate (LN) photonic crystals (PhCs), considering both suspended LN membranes and LN on insulator (LNOI) configurations. Utilizing the gap-to-midgap ratio as a figure-of-merit, we observe a 34% reduction for a suspended LN PhC with 60° sidewall angles compared to the one with vertical sidewalls and a more substantial 73% reduction for LNOI PhCs with 70° sidewall angles. We address this challenge through the optimization of geometrical parameters of PhC unit cells with non-vertical sidewalls, taking fabrication feasibility into account. Our work provides a design guideline for the development of realistic LN PhC devices for future large-scale LN photonic circuits. Full article