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Article

Terahertz Optoelectronic Properties of Monolayer MoS2 in the Presence of CW Laser Pumping

by
Ali Farooq
1,2,
Wen Xu
1,3,4,*,
Jie Zhang
3,5,
Hua Wen
1,2,
Qiujin Wang
3,
Xingjia Cheng
1,2,
Yiming Xiao
3,
Lan Ding
3,
Altayeb Alshiply Abdalfrag Hamdalnile
1,2,
Haowen Li
4 and
Francois M. Peeters
4,6
1
Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
2
University of Science and Technology of China, Hefei 230026, China
3
School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information, Yunnan University, Kunming 650091, China
4
Micro Optical Instruments Inc., Shenzhen 518118, China
5
Kunming Institute of Physics, Kunming 650223, China
6
Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
*
Author to whom correspondence should be addressed.
Physics 2025, 7(3), 27; https://doi.org/10.3390/physics7030027
Submission received: 23 April 2025 / Revised: 14 June 2025 / Accepted: 19 June 2025 / Published: 14 July 2025
(This article belongs to the Section Applied Physics)
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Abstract

Monolayer (ML) molybdenum disulfide (MoS2) is a typical valleytronic material which has important applications in, for example, polarization optics and information technology. In this study, we examine the effect of continuous wave (CW) laser pumping on the basic optoelectronic properties of ML MoS2 placed on a sapphire substrate, where the pump photon energy is larger than the bandgap of ML MoS2. The pump laser source is provided by a compact semiconductor laser with a 445 nm wavelength. Through the measurement of THz time-domain spectroscopy, we obtain the complex optical conductivity for ML MoS2, which are found to be fitted exceptionally well with the Drude–Smith formula. Therefore, we expect that the reduction in conductivity in ML MoS2 is mainly due to the effect of electronic backscattering or localization in the presence of the substrate. Meanwhile, one can optically determine the key electronic parameters of ML MoS2, such as the electron density ne, the intra-band electronic relaxation time τ, and the photon-induced electronic localization factor c. The dependence of these parameters upon CW laser pump intensity is examined here at room temperature. We find that 445 nm CW laser pumping results in the larger ne, shorter τ, and stronger c in ML MoS2 indicating that laser excitation has a significant impact on the optoelectronic properties of ML MoS2. The origin of the effects obtained is analyzed on the basis of solid-state optics. This study provides a unique and tractable technique for investigating photo-excited carriers in ML MoS2.
Keywords: CW laser; monolayer molybdenum disulfide; terahertz optoelectronic properties CW laser; monolayer molybdenum disulfide; terahertz optoelectronic properties

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MDPI and ACS Style

Farooq, A.; Xu, W.; Zhang, J.; Wen, H.; Wang, Q.; Cheng, X.; Xiao, Y.; Ding, L.; Hamdalnile, A.A.A.; Li, H.; et al. Terahertz Optoelectronic Properties of Monolayer MoS2 in the Presence of CW Laser Pumping. Physics 2025, 7, 27. https://doi.org/10.3390/physics7030027

AMA Style

Farooq A, Xu W, Zhang J, Wen H, Wang Q, Cheng X, Xiao Y, Ding L, Hamdalnile AAA, Li H, et al. Terahertz Optoelectronic Properties of Monolayer MoS2 in the Presence of CW Laser Pumping. Physics. 2025; 7(3):27. https://doi.org/10.3390/physics7030027

Chicago/Turabian Style

Farooq, Ali, Wen Xu, Jie Zhang, Hua Wen, Qiujin Wang, Xingjia Cheng, Yiming Xiao, Lan Ding, Altayeb Alshiply Abdalfrag Hamdalnile, Haowen Li, and et al. 2025. "Terahertz Optoelectronic Properties of Monolayer MoS2 in the Presence of CW Laser Pumping" Physics 7, no. 3: 27. https://doi.org/10.3390/physics7030027

APA Style

Farooq, A., Xu, W., Zhang, J., Wen, H., Wang, Q., Cheng, X., Xiao, Y., Ding, L., Hamdalnile, A. A. A., Li, H., & Peeters, F. M. (2025). Terahertz Optoelectronic Properties of Monolayer MoS2 in the Presence of CW Laser Pumping. Physics, 7(3), 27. https://doi.org/10.3390/physics7030027

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