Advances in Integrated Photonics

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: closed (30 April 2025) | Viewed by 2743

Special Issue Editors


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Guest Editor
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 611731, China
Interests: integrated photonics; microwave photonics; optical device; optical communications; all-optical signal processing; nonlinear optics

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Guest Editor
State Key Laboratory for Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou 310058, China
Interests: on-chip multi-dimensional manipulation; multimode photonics; nonlinear optics

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Guest Editor
1. Optoelectronic Research Institute, Westlake University, No. 600 Dunyu Road, Sandun Town, Xihu District, Hangzhou 310030, China
2. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Avenue, West High-Tech Zone, Chengdu 611731, China
Interests: integrated photonics; thin film lithium niobite; microwave photonics; silicon photonics; heterogeneous integration

Special Issue Information

Dear Colleagues,

In recent decades, integrated photonics research has made significant progress in terms of materials, physical mechanisms, and fabrication techniques. By merging photonics, electronics, and mechanics into a single waveguide chip, integrated photonics offers exceptional efficiency, performance and scalability, making it a compelling alternative to conventional discrete devices across various applications.

Silicon photonics has received considerable attention due to its high integration density and compatibility with CMOS processes. Additionally, other material platforms including III-V compounds, silicon nitride, and thin film lithium niobate have gained traction due to their exceptional material properties such as ultra-low loss, high carrier mobility, and large electro-optic and nonlinear coefficients.

Heterogeneous integration of multiple materials enables the assembly of light sources, modulators, routers, detectors and other devices on a single substrate, addressing system-on-chip requirements. Integrated photonics extends beyond traditional optical communication and information processing, offering immense potential in optical computing, medical imaging, LiDAR, sensing, spectral analysis, microwave photonics, biophotonics and optical quantum technology. The integration of diverse materials and functionalities paves the way for groundbreaking optical systems that will shape future technologies.

This Special Issue aims to highlight the advancements in integrated photonics. Authors are encouraged to submit their research papers focusing on innovative developments and breakthroughs in this striking field. Topics of interest include, but are not limited to, the following:

  • Integrated optical passive devices and active devices;
  • Integrated optical nonlinear devices;
  • Heterogeneous integration;
  • Integrated optical communication devices;
  • Integrated optical sensors;
  • Biophotonic chips;
  • Optical quantum chips;
  • Optical logic chips;
  • Microwave photonic chips.

Dr. Zhefeng Hu
Dr. Weike Zhao
Dr. Mengruo Zhang
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • integrated optical passive devices and active devices
  • integrated optical nonlinear devices
  • heterogeneous integration

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Published Papers (3 papers)

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Research

19 pages, 2368 KiB  
Article
Reexamination of Gain Theory for Intrinsic Photoconductive Devices
by Nenad Vrucinic and Yong Zhang
Photonics 2025, 12(5), 523; https://doi.org/10.3390/photonics12050523 - 21 May 2025
Abstract
The quantum efficiency (QE) or gain (G) of a photoconductive device is most commonly given in the literature as a ratio of carrier lifetime to transit time, allowing for a value much greater than unity. In this work, by assuming primary photoconductivity, we [...] Read more.
The quantum efficiency (QE) or gain (G) of a photoconductive device is most commonly given in the literature as a ratio of carrier lifetime to transit time, allowing for a value much greater than unity. In this work, by assuming primary photoconductivity, we reexamine the photoconductive theory for the device with an intrinsic (undoped) semiconductor, with nearly zero equilibrium carrier densities. Analytic gain formula is obtained for arbitrary drift and diffusion parameters under a bias voltage and by neglecting the polarization effect due to the relative displacement in the electron and hole distributions. We find that the lifetime/transit-time ratio formula is only valid in the limit of weak field and no diffusion. Numerical simulations are performed to examine the polarization effect, confirming that it does not change the qualitative conclusions. We discuss the distinction between two QE definitions used in the literature: accumulative QE QEacc, considering the contributions of the flow of all photocarriers, regardless of whether they reach the electrode; and apparent QE (QEapp), measuring the photocurrent at the electrode. In general, QEacc>QEapp, due to an inhomogeneous photocurrent in the channel; however, both approach the same unity limit for strong drift. We find that QEacc QEapp is a deficiency of the commonly adopted constant-carrier-lifetime approximation in the recombination terms. Full article
(This article belongs to the Special Issue Advances in Integrated Photonics)
17 pages, 6072 KiB  
Article
Parameter Investigations of Waveguide-Integrated Lithium Niobate Photonic Crystal Microcavity
by Sohail Muhammad, Dingwei Chen, Chengwei Xian, Jun Zhou, Zhongke Lei, Pengju Kuang, Liang Ma, Guangjun Wen, Boyu Fan and Yongjun Huang
Photonics 2025, 12(5), 475; https://doi.org/10.3390/photonics12050475 - 12 May 2025
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Abstract
Despite significant progress, fabricating two-dimensional (2D) lithium niobate (LN)-based photonic crystal (PhC) cavities integrated with tapered and PhC waveguides remains challenging, due to structural imperfections. Notable, especially, are variations in hole radius (r) and inclination angle (°), which induce bandgap shifts [...] Read more.
Despite significant progress, fabricating two-dimensional (2D) lithium niobate (LN)-based photonic crystal (PhC) cavities integrated with tapered and PhC waveguides remains challenging, due to structural imperfections. Notable, especially, are variations in hole radius (r) and inclination angle (°), which induce bandgap shifts and degrade quality factors (Q-factor). These fabrication errors underscore the critical need to address nanoscale tolerances. Here, we systematically investigate the impacts of key geometric parameters on optical performance and optimize a 2D LN-based cavity integrated with taper and PhC waveguide system. Using a 3D Finite-Difference Time-Domain (FDTD) and varFDTD simulations, we identify stringent fabrication thresholds. The a must exceed 0.72 µm to sustain Q > 107; reducing a to 0.69 µm collapses Q-factors below 104, due to under-coupled modes and bandgap misalignment, which necessitates ±0.005 µm precision. When an r < 0.22 µm weakens confinement, Q plummets to 2 × 104 at r = 0.20 µm (±0.01 µm etching tolerance). Inclination angles < 70° induce 100× Q-factor losses, requiring ±2° alignment for symmetric modes. Air slot width (s) variations shift resonant wavelengths and require optimization in coordination with the inclination angle. By optimizing s and the inclination angle (at 70°), we achieve a record Q-factor of 6.21 × 106, with, in addition, C-band compatibility (1502–1581 nm). This work establishes rigorous design–fabrication guidelines, demonstrating the potential for LN-based photonic devices with high nano-fabrication robustness. Full article
(This article belongs to the Special Issue Advances in Integrated Photonics)
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10 pages, 2354 KiB  
Article
Enhanced Photon-Pair Generation Based on Thin-Film Lithium Niobate Doubly Resonant Photonic Crystal Cavity
by Jinmian Zhu, Fengli Liu, Fangheng Fu, Yuming Wei, Tiefeng Yang, Heyuan Guan and Huihui Lu
Photonics 2024, 11(5), 470; https://doi.org/10.3390/photonics11050470 - 17 May 2024
Cited by 2 | Viewed by 1713
Abstract
In this work, a doubly resonant photonic crystal (PhC) cavity is proposed to enhance second harmonic generation (SHG) efficiency and photon pair generation rate (PGR). Through the exploration of geometry parameters, a band-edge mode within the light cone is identified as the first [...] Read more.
In this work, a doubly resonant photonic crystal (PhC) cavity is proposed to enhance second harmonic generation (SHG) efficiency and photon pair generation rate (PGR). Through the exploration of geometry parameters, a band-edge mode within the light cone is identified as the first harmonic (FH) mode, and a band-edge mode outside the light cone is designated as the second harmonic (SH). Subsequently, by increasing the layers of the core region, a heterostructure PhC cavity is designed. The results showcase a doubly resonant PhC cavity achieving a 133/W SHG efficiency and a photon pair generation rate of 3.7 × 108/s. The exceptional conversion efficiency is attributed to the high quality factors Q observed in the FH and SH modes with values of approximately 280,000 and 2100, respectively. The remarkably high Q factors compensate for nonlinear efficiency degradation caused by detuning, simultaneously making the manufacturing process easier and more feasible. This work is anticipated to provide valuable insights into efficient nonlinear conversion and photon pair generation rates. Full article
(This article belongs to the Special Issue Advances in Integrated Photonics)
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