Search Results (224)

This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO₂ and SrTiO₃ (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO₂/PZT, and Ti/TiO₂/STO/PZT) were synthesized to enable low-temperature growth and improve ferroelectric performance for advanced flexible MEMS. Characterizations including XRD, PFM, and P–E loop analysis evaluated crystallinity, piezoelectric coefficient d₃₃, and polarization behavior. The results demonstrate that the multilayered Ti/TiO₂/STO/PZT structure significantly enhances performance. XRD confirmed the STO buffer layer effectively reduces lattice mismatch with PZT to ~0.76%, promoting stable morphotropic phase boundary (MPB) composition formation. This optimized film exhibited superior piezoelectric and ferroelectric properties, with a high d₃₃ of 113.42 pm/V, representing an ~8.65% increase over unbuffered Ti/PZT samples, and displayed more uniform domain behavior in PFM imaging. Impedance spectroscopy showed the lowest minimum impedance of 8.96 Ω at 10.19 MHz, indicating strong electromechanical coupling. Furthermore, I–V measurements demonstrated significantly suppressed leakage currents in the STO-buffered samples, with current levels ranging from 10⁻¹² A to 10⁻⁹ A over ±3 V. This structure also showed excellent fatigue endurance through one million electrical cycles, confirming its mechanical and electrical stability. These findings highlight the potential of this hydrothermally engineered flexible heterostructure for high-performance actuators and sensors in advanced MEMS applications. Full article

In this study, Hf_0.5Zr_0.5O₂ (HZO) thin-films were deposited using a Co-plasma atomic layer deposition (CPALD) process that combined both remote plasma and direct plasma, for the development of ferroelectric memory devices. Ferroelectric capacitors with a symmetric hybrid TiN/W/HZO/W/TiN electrode structure, incorporating W electrodes as insertion layers, were fabricated. Rapid thermal annealing (RTA) was subsequently employed to control the crystalline phase of the films. The electrical and structural properties of the capacitors were analyzed based on the RTA temperature, and the presence, thickness, and position of the W insertion electrode layer. Consequently, the capacitor with 5 nm-thick W electrode layers inserted on both the top and bottom sides and annealed at 700 °C exhibited the highest remnant polarization (2P_r = 61.0 μC/cm²). Moreover, the symmetric hybrid electrode capacitors annealed at 500–600 °C also exhibited high 2P_r values of approximately 50.4 μC/cm², with a leakage current density of approximately 4 × 10⁻⁵ A/cm² under an electric field of 2.5 MV/cm. The findings of this study are expected to contribute to the development of electrode structures for improved performance of HZO-based ferroelectric memory devices. Full article

Lead ferrite (Pb₂Fe₂O₅) is a promising multiferroic material that exhibits both ferroelectric and magnetic properties at room temperature. This study investigates how substituting niobium and adjusting the synthesis temperature affect the structural, morphological, and ferroelectric properties of lead ferrite thin films deposited via reactive magnetron sputtering. Niobium-substituted PFO films (Pb₂Fe_2(1−x)Nb_2xO₅), where x corresponds to Nb₂O₅ contents of 3 wt.%, 5 wt.% and 10 wt.%, were prepared for this study, and denoted as PFONb3, PFONb5 and PFONb10, respectively. X-ray diffraction analysis confirmed the formation of Nb-substituted PFO phases, while polarization–electric field measurements demonstrated an increase in remnant polarization (P_r), with higher Nb content reaching a maximum P_r of 65 µC/cm² at 10 wt.% Nb and a substrate temperature of 500 °C. Scanning electron microscopy and energy-dispersive spectroscopy revealed a uniform distribution of elements and a well-defined surface structure. These results highlight the need to fine tune synthesis parameters, such as temperature and substitution concentrations, to achieve optimal ferroelectric characteristics. Full article

Porous PZT films offer significant potential due to tunable electromechanical properties, yet the polarization behavior remains insufficiently understood because of discontinuous morphology and domain structures. In this work, we study the impact of porosity on the spontaneous polarization and electromechanical response of PZT thin films fabricated using a multilayer spin-coating technique with various concentrations (0–14%) of polyvinylpyrrolidone (PVP) as a porogen. Atomic force microscopy (AFM) and piezoresponse force microscopy (PFM) were employed to analyze the local topography, domain distribution, and polarization behavior of the films. The results indicate that increasing porosity leads to substantial changes in grain morphology, dielectric permittivity, and polarization response. Films with higher porosity exhibit a more fragmented polarization distribution and reduced piezoresponse, while certain orientations demonstrate enhanced domain mobility. Despite the decrease in overall polarization, the local coercive field remains relatively stable, suggesting structural stability during the local polarization switching. The findings highlight the crucial role of grain boundaries and local charge redistribution in determining local polarization behavior. Full article

Various types of strain, as well as chemical pressure induced by dopants, can effectively tailor the performance of perovskite thin films, including their optical, electrical or photoelectrochemical properties. The control of these functional properties through such engineering techniques is key to fulfilling the application-specific requirements of ferroelectric devices in various fields. Numerous models and experimental data have been published on this subject, especially on ferrite-based ferroelectric materials. Within this paper, the mechanisms of tuning ferroelectric intrinsic properties, such as polarization and ferroelectric domain configurations, through epitaxial strain and doping, as well as the role of these techniques in influencing functional properties such as dielectric and photoelectrochemical ones, are presented. This review examines the significant improvements in dielectric properties and photoelectrochemical efficiency achieved by the strategical control of key functionalities including dielectric losses, domain structures, charge separation and surface reactions in strained/doped ferroelectric thin films, highlighting the advancements and research progress made in this field in recent years. Full article

BiFeO₃ is a fascinating material with a rhombohedral crystal structure (R3c) at room temperature. This unique structure makes it suitable for use in solar cells, as the interaction of light with the polarized octahedral enhances electron movement. Evaluating its properties on different substrates helps to identify the specific characteristics of thin films. The thin films presented in this work were deposited using reactive RF cathodic sputtering with a homemade 1-inch diameter ceramic target. Their morphology, phase composition, optical, piezoelectric, and ferroelectric properties were evaluated. Fluorine Tin Oxide (FTO) and Indium Tin Oxide (ITO) substrates were used for the presented thin films. The thin films deposited on FTO displayed the “butterfly” behavior typically associated with ferroelectric materials. A d₃₃ value of 2.71 nm/V was determined using SSPFM-DART mode. In contrast, the thin films deposited on ITO at 550 °C reached a maximum saturation polarization of 40.89 μC/cm² and a remnant polarization of 44.87 μC/cm², which are the highest values recorded, but did not present the typical “butterfly” behavior. As the grain size increased, the influence of charge defects became more pronounced, leading to an increase in the leakage current. Furthermore, the presence of secondary phases also contributed to this behavior. Full article

Composites of ferromagnetic and ferroelectric phases are of interest for studies on mechanical strain-mediated coupling between the two phases and for a variety of applications in sensors, energy harvesting, and high-frequency devices. Nanocomposites are of particular importance since their surface area-to-volume ratio, a key factor that determines the strength of magneto-electric (ME) coupling, is much higher than for bulk or thin-film composites. Core–shell nano- and microcomposites of the ferroic phases are the preferred structures, since they are free of any clamping due to substrates that are present in nanobilayers or nanopillars on a substrate. This review concerns recent efforts on ME coupling in coaxial fibers of spinel or hexagonal ferrites for the magnetic phase and PZT or barium titanate for the ferroelectric phase. Several recent studies on the synthesis and ME measurements of fibers with nickel ferrite, nickel zinc ferrite, or cobalt ferrite for the spinel ferrite and M-, Y-, and W-types for the hexagonal ferrites were considered. Fibers synthesized by electrospinning were found to be free of impurity phases and had uniform core and shell structures. Piezo force microscopy (PFM) and scanning microwave microscopy (SMM) measurements of strengths of direct and converse ME effects on individual fibers showed evidence for strong coupling. Results of low-frequency ME voltage coefficient and magneto-dielectric effects on 2D and 3D films of the fibers assembled in a magnetic field, however, were indicative of ME couplings that were weaker than in bulk or thick-film composites. A strong ME interaction was only evident from data on magnetic field-induced variations in the remnant ferroelectric polarization in the discs of the fibers. Follow-up efforts aimed at further enhancement in the strengths of ME coupling in core–shell composites are also discussed in this review. Full article

Ferroelectric thin films with a high dielectric tunability (η) have great potential in electrically tunable applications, including microwave tunable devices such as phase shifters, filters, delay lines, etc. Using a modified Landau–Devonshire type thermodynamic potential, we show that the dielectric tunability η of a (001) tetragonal ferroelectric film can be analytically solved. After a survey of materials, a large η value above 60% was predicted to be achievable in a (001)-oriented tetragonal Pb(Zr_0.52Ti_0.48)O₃ (PZT) film. Experimentally, (001)-oriented PZT thin films were prepared on LaNiO₃-coated (100) SrTiO₃ substrates by using pulsed laser deposition (PLD). These films exhibited good dielectric tunability (η ~ 67.6%) measured at a small electric field E of ~250 kV/cm (corresponding to 5 volts for a 200 nm thick film). It only dropped down to ~54.2% when E was further reduced to 125 kV/cm (2.5 volts for 200 nm film). The measured dielectric tunability η as functions of the applied electric field E and measuring frequency f are discussed for a 500 nm thick PZT film, with the former well described by the theoretical η(E) curves and the latter showing a weak frequency dependence. These observations validate our integrated approach rooted in a theoretical understanding. Full article

In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nitride/silicon substrates using the sol–gel method, using rapid thermal annealing for defect repair and re-crystallization processing. The crystallization structure and surface morphology of annealed and as-deposited BST films were obtained by XPS, XRD, and SEM measurements. Additionally, the ferroelectric and resistive switching properties for the memory window, the maximum capacitance, and the leakage current were examined for Al/BST/TiN and Cu/BST/TiN structure memory devices. In addition, the first-order reaction equation of the decay reaction behavior for the BST film RRAM devices in the reset state revealed that $r=0.19{[O^{2-}]}^1$. Finally, the Cu/BST/TiN and Al/BST/TiN structures of the ferroelectric BST films RRAM devices exhibited good memory window properties, bipolar switching properties, and non-volatile properties for applications in non-volatile memory devices. Full article

BaTiO₃ (BTO), a lead-free chalcogenide ferroelectric material, has emerged as a promising candidate for ferroelectric memories due to its advantageous ferroelectric properties, notable flexibility, and mechanical stability, along with a high dielectric constant and minimal leakage. These attributes lay a crucial foundation for multi-value storage. In this study, high-quality BaTiO₃ ferroelectric thin films have been successfully prepared on STO substrates by pulsed laser deposition (PLD), and Pt/BaTiO₃/SrRuO₃/SrTiO₃ ferroelectric heterojunctions were finally prepared by a combination of UV lithography and magnetron sputtering. Characterization and performance tests were carried out by AFM, XRD, and a semiconductor analyzer. The results demonstrate that the ferroelectric heterojunction prepared in this study exhibits excellent ferroelectric properties. Furthermore, the device demonstrates fatigue-free operation after 10⁷ bipolar switching cycle tests, and the polarization value exhibits no significant decrease in the holding characteristic test at 10⁴ s, thereby further substantiating its exceptional reliability and durability. These findings underscore the considerable promise of BTO ferroelectric memories for nonvolatile storage applications and lay the foundation for the development in the fields of both in-memory computing systems and neuromorphic computing. Full article

Perovskite-type materials containing Bi³⁺ cations at A sites are interesting from the viewpoints of applications and fundamental science as the lone pair of Bi³⁺ cations often stabilizes polar, ferroelectric structures. This can be illustrated by a lot of discoveries of different new functionalities in bulk and thin films of BiFeO₃ and its derivatives. In this work, we investigated solid solutions of BiCr_1−xFe_xO₃ with 0.1 ≤ x ≤ 0.4 prepared by a high-pressure (HP) method and post-synthesis annealing at ambient pressure (AP). HP-BiCr_1−xFe_xO₃ modifications with 0.1 ≤ x ≤ 0.3 were mixtures of two phases with space groups C2/c and Pbam, and the amount of the C2/c phase decreased with increasing x. The amount of the C2/c phase was also significantly decreased in AP-BiCr_1−xFe_xO₃ modifications, and the C2/c phase almost disappeared in AP-BiCr_1−xFe_xO₃ with 0.2 ≤ x ≤ 0.3. Fundamental, strong reflections of HP-BiCr_1−xFe_xO₃ and AP-BiCr_1−xFe_xO₃ were almost unchanged; on the other hand, weak superstructure reflections were different and showed clear signs of strong anisotropic broadening and incommensurate positions. These structural features prevented us from determining their room-temperature structures. On the other hand, HP-BiCr_1−xFe_xO₃ and AP-BiCr_1−xFe_xO₃ showed high-temperature structural phase transitions to the GdFeO₃-type Pnma modification at T_srt = 450 K (x = 0.1), T_srt = 480 K (x = 0.2), T_srt = 510 K (x = 0.3), and T_srt = 546 K (x = 0.4). Crystal structures of the GdFeO₃-type Pnma modifications of all the samples were investigated by synchrotron powder X-ray diffraction. Magnetic properties of HP-BiCr_1−xFe_xO₃ and AP-BiCr_1−xFe_xO₃ were quite close to each other (HP vs. AP), and the x = 0.2 samples demonstrated negative magnetization phenomena without signs of the exchange bias effect. Full article

The heterogeneous integration of ferroelectric thin films on silicon- or silicon nitride-based platforms for photonic integrated circuits plays a crucial role in the development of nanophotonic thin film modulators. For this purpose, an ultrathin seed film was recently introduced as an integration method for ferroelectric thin films such as BaTiO₃ and Pb(Zr,Ti)O₃. One issue with this self-orienting seed film is that for non-planarized circuits, it fails to act as a template film for the thin films. To circumvent this problem, we propose a method of planarization without the need for wafer-scale chemical mechanical polishing by using hydrogen silsesquioxane as a precursor to forming amorphous silica, in order to create an oxide cladding similar to the thermal oxide often present on silicon-based platforms. Additionally, this oxide cladding is compatible with the high annealing temperatures usually required for the deposition of these novel ferroelectric thin films (600–800 °C). The thickness of this silica film can be controlled through a dry etch process, giving rise to a versatile platform for integrating nanophotonic thin film modulators on a wider variety of substrates. Using this method, we successfully demonstrate a hybrid BaTiO₃-Si ring modulator with a high Pockels coefficient of $r_{wg}=155.57\pm 10.91$ pm V⁻¹ and a half-wave voltage-length product of $V_{\pi }L=2.638\pm 0.084$ V cm, confirming the integration of ferroelectric thin films on an initially non-planar substrate. Full article

Flexible polymer-based piezoelectric nanogenerators (PENGs) have gained significant interest due to their ability to deliver clean and sustainable energy for self-powered electronics and wearable devices. Recently, the incorporation of fillers into the ferroelectric polymer matrix has been used to improve the relatively low piezoelectric properties of polymer-based PENGs. In this study, we investigated the effect of various nanofillers such as titania (TiO₂), zinc oxide (ZnO), reduced graphene oxide (rGO), and lead zirconate titanate (PZT) on the PENG performance of the nanocomposite thin films containing the nanofillers in poly(vinylidene fluoride-co-trifluoro ethylene) (P(VDF-TrFE)) matrix. The nanocomposite films were prepared by depositing molecularly thin films of P(VDF-TrFE) and nanofiller nanoparticles (NPs) spread at the air/water interface onto the indium tin oxide-coated polyethylene terephthalate (ITO-PET) substrate, and they were characterized by measuring their microstructures, crystallinity, β-phase contents, and piezoelectric coefficients (d₃₃) using SEM, FT-IR, XRD, and quasi-static meter, respectively. Multiple PENGs incorporating various nanofillers within the polymer matrix were developed by assembling thin film-coated substrates into a sandwich-like structure. Their piezoelectric properties, such as open-circuit output voltage (V_OC) and short-circuit current (I_SC), were analyzed. As a result, the PENG containing 4 wt% PZT, which was named P-PZT-4, showed the best performance of V_OC of 68.5 V with the d₃₃ value of 78.2 pC/N and β-phase content of 97%. The order of the maximum V_OC values for the PENGs of nanocomposite thin films containing various nanofillers was PZT (68.5 V) > rGO (64.0 V) > ZnO (50.9 V) > TiO₂ (48.1 V). When the best optimum PENG was integrated into a simple circuit comprising rectifiers and a capacitor, it demonstrated an excellent two-dimensional power density of 20.6 μW/cm² and an energy storage capacity of 531.4 μJ within 3 min. This piezoelectric performance of PENG with the optimized nanofiller type and content was found to be superior when it was compared with those in the literature. This PENG comprising nanocomposite thin film with optimized nanofiller type and content shows a potential application for a power source for low-powered electronics such as wearable devices. Full article

This work explores the deposition of hexagonal (h-) LuMnO₃ thin films in the P6₃cm phase and investigates the conditions under which the synergy of ferroelectric and photoactive properties, can be achieved to confirm the potential of this material for applications in the development of next-generation photovoltaic devices. Single-phase h-LuMnO₃ was successfully deposited on different substrates, and the thermal stability of the material was confirmed by Micro-Raman spectroscopy analysis from 77 to 850 K, revealing the suitable ferro- to para-electric transition near 760 K. Optical measurements confirm the relatively narrow band gap at 1.5 eV, which corresponds to the h-LuMnO₃ system. The presence of domain structures and the signature of hysteresis loops consistent with ferroelectric behaviour were confirmed by piezoresponse force microscopy. In addition, light-dependent photocurrent measurements revealed the photoactive sensitivity of the material. Full article

Lithium niobate (LiNbO₃) has remarkable ferroelectric properties, and its unique crystal structure allows it to undergo significant spontaneous polarization. Lithium niobate plays an important role in the fields of electro-optic modulation, sensing and acoustics due to its excellent electro-optic and piezoelectric properties. Thin-film LiNbO₃ (TFLN) has attracted much attention due to its unique physical properties, stable properties and easy processing. This review introduces several main preparation methods for TFLN, including chemical vapor deposition (CVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), magnetron sputtering and Smartcut technology. The development of TFLN devices, especially the recent research on sensors, memories, optical waveguides and EO modulators, is introduced. With the continuous advancement of manufacturing technology and integration technology, TFLN devices are expected to occupy a more important position in future photonic integrated circuits. Full article