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Crystals
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Recent Research on Electronic Materials and Packaging Technology
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Recent Research on Electronic Materials and Packaging Technology

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Hybrid and Composite Crystalline Materials".

Deadline for manuscript submissions: 20 June 2026 | Viewed by 4236

Special Issue Editors

Dr. Siliang He

E-Mail Website
Guest Editor
School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Interests: electronics packaging; soldering; sintering
Dr. Jinguo Ge

E-Mail Website
Guest Editor
School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Interests: electronics packaging; additive manufacturing; microstructural control
Dr. Jing Liu

E-Mail Website
Guest Editor
School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Interests: dynamic information storage and encryption; light response regulation; molecular self-assembly

Special Issue Information

Dear Colleagues,

The field of electronics continues to evolve at an exponential pace, driven by advancements in miniaturization, energy efficiency, and multifunctional device integration. Electronic materials and packaging technologies must balance conflicting requirements, such as high thermal conductivity with electrical insulation, mechanical flexibility with structural integrity, and environmental sustainability with cost-effectiveness. Recent progress in crystalline materials—including semiconductors, oxides, metals, ceramics, plastics, composites and 2D nanomaterials—has unlocked new possibilities. However, challenges remain, such as interface regulation mechanisms in composites, interfacial thermal resistance in layered structures, signal attenuation in high-frequency systems, and the environmental impact of lead-based solders.

This Special Issue seeks to address these gaps through interdisciplinary research. We are interested in research that explores the design, structure, and application of these materials. Potential topics include material selection and properties, design and structure optimization, advanced manufacturing techniques, applications in electronics, and environmental and sustainability considerations. We welcome both research articles and review papers that contribute to the development of electronic information materials and packaging materials.

Dr. Siliang He
Dr. Jinguo Ge
Dr. Jing Liu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • electronics packaging
  • advanced manufacturing techniques
  • crystalline materials
  • microstructure characterization
  • semiconductor crystals
  • thermal interface materials

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (3 papers)

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14 pages, 3488 KB  
Article
Study on the IMC Growth Mechanism of Cu/Sn-58Bi/Cu Joint Under Electromigration with Alternating Current
by Bo Wang, Peiying Zhu, Guopei Zhang, Chunyuan Deng, Kaixuan He, Wei Huang and Kailin Pan
Crystals 2026, 16(2), 127; https://doi.org/10.3390/cryst16020127 - 9 Feb 2026
Viewed by 417
Abstract
With the ongoing miniaturization of solder joints in three-dimensional integrated electronic packaging, electromigration reliability has become a pressing concern. This study systematically examines the interfacial intermetallic compound (IMC) growth behavior of Cu/Sn-58Bi/Cu joint under electromigration (EM) with a symmetrical square-wave alternating current (AC). [...] Read more.
With the ongoing miniaturization of solder joints in three-dimensional integrated electronic packaging, electromigration reliability has become a pressing concern. This study systematically examines the interfacial intermetallic compound (IMC) growth behavior of Cu/Sn-58Bi/Cu joint under electromigration (EM) with a symmetrical square-wave alternating current (AC). Electron backscatter diffraction (EBSD) was employed to perform statistical spatial analysis of Sn grain orientations within the joints to reveal the growth mechanism of interfacial IMC. Results demonstrate that the AC field markedly enhances the anisotropy of IMC growth in Cu/Sn-58Bi/Cu joints, exhibiting two phenomena: uniform growth on both sides and rapid growth (polar growth) on one side of the interfacial IMC. Among them, the IMC thickness difference characterization quantity ΔIMC reached as high as 45.56% for the latter. This is attributed to the directional regulation of atomic migration rate by Sn grain orientation (the angle θ between the c-axis and the electron flow) and is further amplified by the altered atomic diffusion pathways imposed by the Bi phase distribution. Specifically, the Sn grains exhibit a pronounced preferential orientation mode along the current path (horizontal direction), with an orientation gradient of 0.915 μm−1. The arrangement of Bi-rich phases alters the distribution of Sn grains in Cu/Sn-58Bi/Cu joints, thereby reshaping the internal electron transport pathways and significantly intensifying the orientation-dependent effect of IMC growth. Moreover, Sn grains adjacent to the Bi-rich phase boundaries (phase boundary grains) display a stronger tendency for c-axis orientation parallel to the current direction, exhibiting an average effective orientation parameter 1.948 times greater than that of bulk grains, which establishes a well-defined spatial orientation gradient. Full article
(This article belongs to the Special Issue Recent Research on Electronic Materials and Packaging Technology)
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18 pages, 8734 KB  
Article
Effect of Current Density on Shear Performance and Fracture Behavior of Cu/Sn-58Bi/Cu Solder Joints
by Kailin Pan, Zimeng Chen, Menghao Liu, Zhanglong Ke, Bo Wang, Kaixuan He, Wei Huang and Siliang He
Crystals 2025, 15(11), 945; https://doi.org/10.3390/cryst15110945 - 31 Oct 2025
Viewed by 841
Abstract
Characterized by its low melting temperature of 138 °C, the eutectic Sn-58Bi solder expands the melting temperature range of interconnect joints in electronic packaging, making it widely used in multi-level packaging processes. However, its reliability at higher current densities poses a challenge. This [...] Read more.
Characterized by its low melting temperature of 138 °C, the eutectic Sn-58Bi solder expands the melting temperature range of interconnect joints in electronic packaging, making it widely used in multi-level packaging processes. However, its reliability at higher current densities poses a challenge. This paper employs a hybrid process combining laser soldering and hot-air reflow to fabricate Cu/Sn-58Bi/Cu solder joints in ball grid array (BGA) structures. Through mechanical testing under current loading, the effects of increasing current density (0 A/cm2, 0.85 × 103 A/cm2, 1.70 × 103 A/cm2, 2.55 × 103 A/cm2, 3.40 × 103 A/cm2, 4.25 × 103 A/cm2) were studied systematically. Results indicate that the shear strength decreases markedly with increasing current density, exhibiting a reduction of approximately 5.63% to 95.75%. This degradation is initiated by the overall temperature increase and material softening due to Joule heating. It is further exacerbated by the loss of the non-thermal electron wind’s strengthening contribution, which weakens as the dominant thermal impact escalates with current density. Fracture mode transitions from ductile failure within the solder matrix to a ductile-brittle mixture at the solder/IMC interface, with the transition initiating at 3.40 × 103 A/cm2. Finite element simulations reveal that current crowding in Sn-rich regions and at the solder/IMC interface induces localized Joule heating and thermomechanical strain, which jointly drive the degradation in shear strength and the shift in fracture path. Full article
(This article belongs to the Special Issue Recent Research on Electronic Materials and Packaging Technology)
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15 pages, 6277 KB  
Article
High-Performance Ferroelectric Capacitors Based on Pt/BaTiO3/SrRuO3/SrTiO3 Heterostructures for Nonvolatile Memory Applications
by Zengyuan Fang, Yiming Peng, Haiou Li, Xingpeng Liu and Jianghui Zhai
Crystals 2025, 15(4), 337; https://doi.org/10.3390/cryst15040337 - 2 Apr 2025
Cited by 1 | Viewed by 2388
Abstract
BaTiO3 (BTO), a lead-free chalcogenide ferroelectric material, has emerged as a promising candidate for ferroelectric memories due to its advantageous ferroelectric properties, notable flexibility, and mechanical stability, along with a high dielectric constant and minimal leakage. These attributes lay a crucial foundation [...] Read more.
BaTiO3 (BTO), a lead-free chalcogenide ferroelectric material, has emerged as a promising candidate for ferroelectric memories due to its advantageous ferroelectric properties, notable flexibility, and mechanical stability, along with a high dielectric constant and minimal leakage. These attributes lay a crucial foundation for multi-value storage. In this study, high-quality BaTiO3 ferroelectric thin films have been successfully prepared on STO substrates by pulsed laser deposition (PLD), and Pt/BaTiO3/SrRuO3/SrTiO3 ferroelectric heterojunctions were finally prepared by a combination of UV lithography and magnetron sputtering. Characterization and performance tests were carried out by AFM, XRD, and a semiconductor analyzer. The results demonstrate that the ferroelectric heterojunction prepared in this study exhibits excellent ferroelectric properties. Furthermore, the device demonstrates fatigue-free operation after 107 bipolar switching cycle tests, and the polarization value exhibits no significant decrease in the holding characteristic test at 104 s, thereby further substantiating its exceptional reliability and durability. These findings underscore the considerable promise of BTO ferroelectric memories for nonvolatile storage applications and lay the foundation for the development in the fields of both in-memory computing systems and neuromorphic computing. Full article
(This article belongs to the Special Issue Recent Research on Electronic Materials and Packaging Technology)
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