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Keywords = charge trapping and release

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10 pages, 878 KB  
Article
Low Afterglow Composite Scintillator for Real-Time X-Ray Imaging
by Xiangzhou Zhang, Yeqi Liu, Nianqiao Liu, Zhaolai Chen, Yuhai Zhang and Xiao Cheng
Materials 2026, 19(2), 437; https://doi.org/10.3390/ma19020437 - 22 Jan 2026
Viewed by 16
Abstract
Rare-earth fluoride nanocrystals have emerged as promising scintillator materials due to their excellent optical properties, environmental stability, and ease of fabrication into flexible screens. However, their practical application is often hindered by persistent afterglow, a phenomenon caused by deep trap states that capture [...] Read more.
Rare-earth fluoride nanocrystals have emerged as promising scintillator materials due to their excellent optical properties, environmental stability, and ease of fabrication into flexible screens. However, their practical application is often hindered by persistent afterglow, a phenomenon caused by deep trap states that capture and slowly release charge carriers after X-ray excitation, which leads to signal overlap and image artifacts in dynamic imaging scenarios. This study addresses this critical challenge by developing Ce3+/Tb3+ co-doped NaLuF4 nanoscintillators with suppressed afterglow. By introducing Ce3+ions as dopants into the Tb3+-activated NaLuF4 host, we successfully quenched the characteristic long afterglow without compromising the intrinsic radioluminescence efficiency of the Tb3+ centers. The optimized nanocrystals were subsequently incorporated into a poly (vinyl alcohol) matrix to fabricate transparent, high-loading composite scintillator films. The resulting films exhibit negligible afterglow, maintain high spatial resolution, and demonstrate excellent radiation stability. This work presents an effective strategy for suppressing afterglow in rare-earth fluoride scintillators through targeted ion doping, which paves the way for their application in real-time, high-quality X-ray imaging technologies such as medical diagnostics and industrial inspection. Full article
(This article belongs to the Special Issue Halide Perovskite Crystal Materials and Optoelectronic Devices)
20 pages, 470 KB  
Review
Peptidylarginine Deiminases: An Overview of Recent Advances in Citrullination Research
by Magdalena Kijak-Boćkowska, Joanna Czerwińska and Agnieszka Owczarczyk-Saczonek
Int. J. Mol. Sci. 2025, 26(24), 12060; https://doi.org/10.3390/ijms262412060 - 15 Dec 2025
Viewed by 946
Abstract
The peptidylarginine deiminase (PAD) family includes five isozymes (PAD1–4 and PAD6) with unique tissue distributions and substrate specificities. These enzymes facilitate citrullination, a post-translational modification where positively charged arginine residues are converted into neutral citrulline residues in the presence of calcium ions. This [...] Read more.
The peptidylarginine deiminase (PAD) family includes five isozymes (PAD1–4 and PAD6) with unique tissue distributions and substrate specificities. These enzymes facilitate citrullination, a post-translational modification where positively charged arginine residues are converted into neutral citrulline residues in the presence of calcium ions. This process significantly changes protein properties, affecting molecular interactions, structural stability, and biological functions. Over the past six years (2019–2025), there has been significant progress in understanding PAD activity mechanisms and their therapeutic potential. Recent discoveries include the regulated nuclear translocation of PAD2, PAD4’s specific role in forming cancer extracellular chromatin networks (CECNs), and the development of next-generation inhibitors with greatly improved pharmacological profiles. PAD4 is crucial in forming neutrophil extracellular traps (NETs). Citrullination of histones H3 and H4 by PAD4 destabilizes chromatin, helping release DNA-protein networks as an antibacterial defense. However, excessive NET formation can contribute to autoimmune diseases and thrombosis. Similarly, the bacterial peptidylarginine deiminase from Porphyromonas gingivalis (PPAD)—the only known prokaryotic citrullinating enzyme—plays a key role. Working with R-gingipains, PPAD triggers pathological citrullination of host proteins, leading to immune tolerance breakdown and linking periodontal disease with systemic autoimmune disorders such as rheumatoid arthritis, atherosclerosis, and Alzheimer’s disease. Once thought to be a rare post-translational modification, citrullination is now understood as a vital regulatory mechanism in both normal physiology and disease, involving both internal processes of homeostasis and external mechanisms of bacterial pathogenesis. Full article
(This article belongs to the Special Issue Current Progress in Neutrophil Extracellular Traps (NETs))
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17 pages, 4400 KB  
Article
Advanced Polyamidoamine Hydrogels for the Selective Cleaning of Artifacts in Heritage Conservation
by Elisabetta Ranucci and Jenny Alongi
Polymers 2025, 17(19), 2680; https://doi.org/10.3390/polym17192680 - 3 Oct 2025
Viewed by 751
Abstract
A polyamidoamine-based hydrogel (H-M-GLY) and its montmorillonite-based composite (H-M-GLY/MMT) were studied as selective cleaning materials for cultural heritage conservation. H-M-GLY was synthesized from a glycine-based polyamidoamine oligomer with acrylamide terminals (M-GLY) through radical polymerization at pH 7.3 and had a basic character. The [...] Read more.
A polyamidoamine-based hydrogel (H-M-GLY) and its montmorillonite-based composite (H-M-GLY/MMT) were studied as selective cleaning materials for cultural heritage conservation. H-M-GLY was synthesized from a glycine-based polyamidoamine oligomer with acrylamide terminals (M-GLY) through radical polymerization at pH 7.3 and had a basic character. The M-GLY oligomer was in turn synthesized from N,N′-methylenebisacrylamide and glycine in a 1:0.85 molar ratio. H-M-GLY/MMT was obtained by cross-linking a 1:0.1—weight ratio—M-GLY/MMT mixture at pH 4.0, to promote polyamidoamine-MMT interaction. The composite hydrogel absorbed less water than the plain hydrogel and proved tougher, due to montmorillonite’s electrostatic interactions with the positively charged M-GLY units. Scanning electron microscopic analysis showed that MMT was uniformly dispersed throughout the hydrogel. Both hydrogels were subjected to ink bleeding tests on papers written with either iron gall or India ink. Microscopic observation revealed neither bleeding nor release of hydrogel fragments. Being basic, H-M-GLY successfully deacidified the surface of aged paper. H-M-GLY/MMT, swollen in a 1:9 ethanol/water solution, was found to be effective in removing wax, known to trap carbonaceous particles and form dark stains on artistic artifacts. This study demonstrates the great potential of polyamidoamine-based hydrogels as versatile selective cleaning systems for cellulosic and other cultural heritage materials. Full article
(This article belongs to the Section Polymer Chemistry)
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13 pages, 2498 KB  
Article
Evaluation of Dynamic On-Resistance and Trapping Effects in GaN on Si HEMTs Using Rectangular Gate Voltage Pulses
by Pasquale Cusumano, Alessandro Sirchia and Flavio Vella
Electronics 2025, 14(14), 2791; https://doi.org/10.3390/electronics14142791 - 11 Jul 2025
Cited by 2 | Viewed by 2573
Abstract
Dynamic on-resistance (RON) of commercial GaN on Si normally off high-electron-mobility transistor (HEMT) devices is a very important parameter because it is responsible for conduction losses that limit the power conversion efficiency of high-power switching converters. Due to charge trapping effects, [...] Read more.
Dynamic on-resistance (RON) of commercial GaN on Si normally off high-electron-mobility transistor (HEMT) devices is a very important parameter because it is responsible for conduction losses that limit the power conversion efficiency of high-power switching converters. Due to charge trapping effects, dynamic RON is always higher than in DC, a behavior known as current collapse. To study how short-time dynamics of charge trapping and release affects RON we use rectangular 0–5 V gate voltage pulses with durations in the 1 μs to 100 μs range. Measurements are first carried out for single pulses of increasing duration, and it is found that RON depends on both pulse duration and drain current ID, being higher at shorter pulse durations and lower ID. For a train of five pulses, RON decreases with pulse number, reaching a steady state after a time interval of 100 μs. The response to a five pulses train is compared to that of a square-wave signal to study the time evolution of RON toward a dynamic steady state. The DC RON is also measured, and it is a factor of ten smaller than dynamic RON at the same ID. This confirms that a reduction in trapped charges takes place in DC as compared to the square-wave switching operation. Additional off-state stress tests at VDS = 55 V reveal the presence of residual surface traps in the drain access region, leading to four times increase in RON in comparison to pristine devices. Finally, the dynamic RON is also measured by the double-pulse test (DPT) technique with inductive load, giving a good agreement with results from single-pulse measurements. Full article
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35 pages, 11695 KB  
Article
Polymorphism in Glu-Phe-Asp Proteinoids
by Panagiotis Mougkogiannis and Andrew Adamatzky
Biomimetics 2025, 10(6), 360; https://doi.org/10.3390/biomimetics10060360 - 3 Jun 2025
Cited by 3 | Viewed by 930
Abstract
Glu-Phe-Asp (GFD) proteinoids represent a class of synthetic polypeptides capable of self-assembling into microspheres, fibres, or combinations thereof, with morphology dramatically influencing their electrical properties. Extended recordings and detailed waveforms demonstrate that microspheres generate rapid, nerve-like spikes, while fibres exhibit consistent and gradual [...] Read more.
Glu-Phe-Asp (GFD) proteinoids represent a class of synthetic polypeptides capable of self-assembling into microspheres, fibres, or combinations thereof, with morphology dramatically influencing their electrical properties. Extended recordings and detailed waveforms demonstrate that microspheres generate rapid, nerve-like spikes, while fibres exhibit consistent and gradual variations in voltage. Mixed networks integrate multiple components to achieve a balanced output. Electrochemical measurements show clear differences. Microspheres have a low capacitance of 1.926±5.735μF. They show high impedance at 6646.282±178.664 Ohm. Their resistance is low, measuring 15,830.739 ± 652.514 mΩ. This structure allows for quick ionic transport, leading to spiking behaviour. Fibres show high capacitance (9.912±0.171μF) and low impedance (209.400±0.286 Ohm). They also have high resistance (163,067.613 ± 9253.064 mΩ). This combination helps with charge storage and slow potential changes. The 50:50 mixture shows middle values for all parameters. This confirms that hybrid electrical properties have emerged. The differences come from basic structural changes. Microspheres trap ions in small, round spaces. This allows for quick release. In contrast, fibers spread ions along their length. This leads to slower wave propagation. In mixed systems, diverse voltage zones emerge, suggesting cooperative dynamics between morphologies. This electrical polymorphism in simple proteinoid systems may explain complexity in biological systems. This study shows that structural polymorphism in GFD proteinoids affects their electrical properties. This finding is significant for biomimetic computing and sheds light on prebiotic information-processing systems. Full article
(This article belongs to the Section Biomimetic Surfaces and Interfaces)
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14 pages, 3948 KB  
Article
Using Triangular Gate Voltage Pulses to Evaluate Hysteresis and Charge Trapping Effects in GaN on Si HEMTs
by Pasquale Cusumano, Flavio Vella and Alessandro Sirchia
Electronics 2025, 14(10), 1991; https://doi.org/10.3390/electronics14101991 - 13 May 2025
Cited by 1 | Viewed by 1206
Abstract
Charge carrier traps due to crystal defects in GaN on Si HEMT devices are responsible for dynamic performance degradation, long-term reliability limitations, and peculiar failure modes. The behavior of traps depends on many variables including heterostructure quality, the specific device structure, and operating [...] Read more.
Charge carrier traps due to crystal defects in GaN on Si HEMT devices are responsible for dynamic performance degradation, long-term reliability limitations, and peculiar failure modes. The behavior of traps depends on many variables including heterostructure quality, the specific device structure, and operating conditions. To study the short time dynamics of charge trapping and release on the threshold voltage shift and hysteresis of commercial normally off GaN HEMTs we use triangular 0–5 V gate voltage pulses in the μs to ms duration range. Measurements are performed for single pulses by varying pulse duration and for a train of a few pulses by varying their number. The results indicate that hysteresis and related threshold voltage shift occur after repeated pulses, suggesting an accumulation of trapped charges. However, for a triangular wave hysteresis vanishes, meaning that a dynamic balance between charge trapping and release is established in the device. This can be considered as a positive indicator of device robustness and reliability. The same method, used to measure the gate threshold voltage shift and dynamic RON after a 30 min off-state DC stress at VDS = 55 V with a floating gate, highlights an appreciable performance degradation of the device. Full article
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20 pages, 4935 KB  
Article
Characterization, Performance, and Toxicological Assessment of Polysulfone-Sulfonated Polyether Ether Ketone Membranes for Water Separation Applications
by Muhammad Usman Yousaf, Lucca Madeo Cortarelli, Nerissa I. Jebet, Jason M. Unrine, Nirupam Aich, Olga V. Tsyusko and Isabel C. Escobar
Membranes 2025, 15(3), 87; https://doi.org/10.3390/membranes15030087 - 8 Mar 2025
Cited by 3 | Viewed by 3391
Abstract
The removal of small molecular weight charged compounds from aqueous solutions using membrane remains a challenge. In this study, polysulfone (PSf)- and sulfonated polyether ether ketone (SPEEK)-based membranes were fabricated via non-solvent induced phase separation process (NIPS) using N-Methyl-2-Pyrrolidone (NMP) as solvent and [...] Read more.
The removal of small molecular weight charged compounds from aqueous solutions using membrane remains a challenge. In this study, polysulfone (PSf)- and sulfonated polyether ether ketone (SPEEK)-based membranes were fabricated via non-solvent induced phase separation process (NIPS) using N-Methyl-2-Pyrrolidone (NMP) as solvent and water as non-solvent. Membranes were characterized structurally and morphologically, followed by toxicity assessment conducted before and after filtration, both with and without annealing at various pH values to evaluate potential leaching of trapped solvent from the membrane pores. Additionally, membrane performance was characterized using binary mixtures of cationic and anionic dyes. The results demonstrated selective filtration behavior, with cationic dyes being preferentially rejected due to size exclusion and electrostatic interactions. Additionally, a key focus of this work was the investigation of solvent leaching, framed within a Safe(r)-by-Design (SbD) approach aimed at enhancing functional performance while minimizing environmental toxicity. Toxicity assessments using a model organism, a nematode Caenorhabditis elegans, revealed that annealing reduced solvent leaching and thus permeate toxicity, particularly at neutral pH values, by facilitating trapped solvent release prior to membrane use. These findings provide insights for the importance of including an SbD approach during membrane casting to fabricate membranes with desirable properties while minimizing toxicity. Full article
(This article belongs to the Section Membrane Fabrication and Characterization)
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19 pages, 3432 KB  
Article
Stress Distributions and Luminescent Responses of Mechanoluminescent Cylinders with Various Sizes and Loading Paths
by Chang-Ying Sun, Wei Liu, Xin Shi, Guang-Hui Rao and Jing-Tai Zhao
Materials 2025, 18(2), 331; https://doi.org/10.3390/ma18020331 - 13 Jan 2025
Cited by 2 | Viewed by 2509
Abstract
Mechanoluminescent (ML) materials emit light by trapping and releasing charge carriers under mechanical stress. However, previous studies do not fully reveal the relationship between emitting light intensity and mechanical stress, thereby affecting the accuracy of stress measurement. This study addresses this gap by [...] Read more.
Mechanoluminescent (ML) materials emit light by trapping and releasing charge carriers under mechanical stress. However, previous studies do not fully reveal the relationship between emitting light intensity and mechanical stress, thereby affecting the accuracy of stress measurement. This study addresses this gap by systematically investigating ML cylinders with various sizes and loading paths using theoretical analysis and simulations, focusing on the maximum contact stress, equivalent stress distribution, and the relationship between the strain energy density and light intensity at the point of maximum contact stress. In combination with experiments, the mechanical behavior and optical responses of ML cylinders under normal compressive forces reveal that the luminescence intensity is closely related to cylinder size and loading path, effectively reflecting stress distributions in objects of different sizes under complex stress conditions. Particularly, within the elastic range and under ideal conditions where lateral stress is ignored, the maximum contact stress is nearly equal to the equivalent stress. The equivalent stress is linearly related to the light intensity, while the strain energy density at the maximum contact stress point is proportional to the square root of the light intensity. This work promotes the application of ML materials in structural health monitoring and stress visualization. Full article
(This article belongs to the Section Optical and Photonic Materials)
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16 pages, 4254 KB  
Article
Optimizing Bipolar Reset Waveform to Improve Grayscale Stability in Active Matrix Electrowetting Displays
by Taiyuan Zhang, Li Wang, Linwei Liu, Wei Li, Shipeng Wu, Jianyang Guo and Guofu Zhou
Micromachines 2024, 15(10), 1247; https://doi.org/10.3390/mi15101247 - 11 Oct 2024
Cited by 3 | Viewed by 1789
Abstract
The electrowetting display (EWD) device is a new type of electrowetting-on-dielectric (EWOD) equipment that can achieve a paper-like display effect under the control of an electric field. In this microfluidic system, the stability of grayscale can be affected by various factors, such as [...] Read more.
The electrowetting display (EWD) device is a new type of electrowetting-on-dielectric (EWOD) equipment that can achieve a paper-like display effect under the control of an electric field. In this microfluidic system, the stability of grayscale can be affected by various factors, such as the physicochemical properties of the materials, the device structure, and electric field distribution. To improve the grayscale stability of active matrix electrowetting displays (AM-EWDs), the impact of different polarities of driving voltage on oil backflow was investigated in this study. Based on the driving principles of AM-EWD, an optimized inter-frame bipolar reset driving waveform was designed to overcome oil backflow. The proposed driving waveform maintained the stability of the oil state by periodically and rapidly releasing trapped charges in the dielectric layer through a reverse driving voltage. Additionally, the effect of feed-through voltage on pixel driving voltage was eliminated by compensating for the driving voltage on a common electrode. Finally, the performance of the designed driving waveform was evaluated with a 6-inch AM-EWD driving platform. Compared to the conventional unipolar reset driving waveform, the backflow speed decreased by 2.70 a.u./s. The standard deviation of the display luminance was also reduced by 11.24 a.u. Experimental results indicated that both the oil backflow speed and the fluctuation range of luminance were effectively suppressed by the proposed driving waveform. Full article
(This article belongs to the Special Issue Photonic and Optoelectronic Devices and Systems, Second Edition)
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15 pages, 4455 KB  
Article
Improved DC Dielectric Performance of Cross-Linked Polyethylene Modified by Free Radical-Initiated Grafting BMIE
by Peng Li, Xuan Wang, Jin Jin, Hui Zhang and Wei Han
Materials 2023, 16(20), 6659; https://doi.org/10.3390/ma16206659 - 12 Oct 2023
Cited by 3 | Viewed by 1882
Abstract
To enhance the direct current (DC) dielectric properties of cross-linked polyethylene (XLPE) for high-voltage (HV) cable insulation, the polyethylene molecular chain is modified by grafting bismaleimide ethane (BMIE), which creates carrier deep traps within the polymer material. Compared to the traditional modified molecule [...] Read more.
To enhance the direct current (DC) dielectric properties of cross-linked polyethylene (XLPE) for high-voltage (HV) cable insulation, the polyethylene molecular chain is modified by grafting bismaleimide ethane (BMIE), which creates carrier deep traps within the polymer material. Compared to the traditional modified molecule maleic anhydride (MAH), BMIE has a significantly higher boiling point than the production temperature of XLPE. Additionally, it does not release bubbles during the production process and, thus, preserves the dielectric properties. It was proved by infrared spectroscopy and a gel content test that BMIE was successfully grafted onto the polyethylene molecular chain and had no effect on the crosslinking degree of the polymer while reducing the amount of crosslinker, thereby reducing the influence of the by-products of the decomposition of dicumene peroxide (DCP) on the electrical resistance of polymers. The analysis of DC breakdown field strength, current density, and space charge distribution at various temperatures demonstrates that grafting BMIE can greatly enhance the dielectric properties of insulation. Polar groups in the BMIE molecule create deep trap energy levels in XLPE-g-BMIE, and these trap energy levels contribute to the formation of a charged layer near the electrode, which is shielded by Coulomb potential. As a result, the charge injection barrier increases. Additionally, the presence of these polar groups reduces the mobility of charge carriers through trap-carrier scattering, effectively suppressing the accumulation of space charge within the material. First-principle calculations also confirm that bound states can be introduced as carrier traps by grafting BMIE onto polyethylene molecules. The agreement between experimental results and simulation calculations indicates that grafting BMIE to enhance the dielectric properties of polyethylene is a new and feasible research direction in the exploitation of materials for HVDC cables. Full article
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9 pages, 1940 KB  
Article
Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices
by Hao Wu, Xiaojun Fu, Jun Luo, Manlin Yang, Xiaoyu Yang, Wei Huang, Huan Zhang, Fan Xiang, Yang Pu and Ziwei Wang
Micromachines 2023, 14(10), 1832; https://doi.org/10.3390/mi14101832 - 26 Sep 2023
Cited by 5 | Viewed by 2152
Abstract
GaN devices are nowadays attracting global attention due to their outstanding performance in high voltage, high frequency, and anti-radiation ability. Research on total ionizing dose and annealing effects on E-mode GaN Cascode devices has been carried out. The Cascode device consists of a [...] Read more.
GaN devices are nowadays attracting global attention due to their outstanding performance in high voltage, high frequency, and anti-radiation ability. Research on total ionizing dose and annealing effects on E-mode GaN Cascode devices has been carried out. The Cascode device consists of a low-voltage MOSFET and a high-voltage depletion-mode GaN MISHEMT. Cascode devices of both conventional processed MOSFET and radiation-hardened MOSFET devices are fabricated to observe the TID effects. Experiment results indicate that, for the Cascode device with conventional processed MOSFET, the VTH shifts to negative values at 100 krad(Si). For the Cascode device with radiation-hardened MOSFET, the VTH shifts by −0.5 V at 100 krad(Si), while shifts to negative values are 500 krad(Si). The annealing process, after the TID experiment, shows that it can release trapped charges and help VTH recover. On one hand, the VTH shift and recover trends are similar to those of a single MOSFET device, suggesting that the MOSFET is the vulnerable part in the Cascode which determines the anti-TID ability of the device. On the other hand, the VTH shift amount of the Cascode device is much larger than that of a previously reported p-GaN HEMT device, indicating that GaN material shows a better anti-TID ability than Si. Full article
(This article belongs to the Section E:Engineering and Technology)
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18 pages, 7221 KB  
Article
Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method
by Maissa Belkhiria, Fatma Aouaini, Shatha A. Aldaghfag, Fraj Echouchene and Hafedh Belmabrouk
Electronics 2023, 12(17), 3673; https://doi.org/10.3390/electronics12173673 - 31 Aug 2023
Cited by 7 | Viewed by 3368
Abstract
Trap density refers to the density of electronic trap states within dielectric materials that can capture and release charge carriers (electrons or holes) in a semiconductor channel, affecting the transistor’s performance. This study aims to investigate the influence of trap density on the [...] Read more.
Trap density refers to the density of electronic trap states within dielectric materials that can capture and release charge carriers (electrons or holes) in a semiconductor channel, affecting the transistor’s performance. This study aims to investigate the influence of trap density on the electrothermal behavior of nanowire gate-all-around GAAFET devices. The numerical solution of Poisson’s equations and continuity equations, coupled with the heat conduction model, has been used to predict the temperature inside the GAAFET device. The finite element method has been used to discretize the semiconductor equations. Investigations have been carried out on a number of physical and geometric parameters, such as oxide thickness, nanowire radius, and gate length. Their effects on output characteristics and device temperature have been discussed. A thinner oxide thickness, lower device radius, and longer channel length led to a higher current flow. Results also reveal that high trap densities can have significant impacts on the degradation of electronic devices, particularly in the context of semiconductor devices like transistors. Full article
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13 pages, 2634 KB  
Article
Effect of Sodium Hydroxide and Tripolyphosphate on Curcumin Release from Chitosan-Based Macroparticles
by Alessandro Pistone, Annamaria de Gaetano, Elpida Piperopoulos and Chiara Abate
Materials 2023, 16(17), 5850; https://doi.org/10.3390/ma16175850 - 26 Aug 2023
Cited by 6 | Viewed by 2538
Abstract
This work deals with the synthesis of bare and curcumin (CUR)-loaded chitosan (CS)-based macroparticles by ionic gelation using sodium hydroxide (NaOH) or sodium tripolyphosphate (TPP). The resulting spherical-shaped macroparticles were studied using various characterization techniques, Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy [...] Read more.
This work deals with the synthesis of bare and curcumin (CUR)-loaded chitosan (CS)-based macroparticles by ionic gelation using sodium hydroxide (NaOH) or sodium tripolyphosphate (TPP). The resulting spherical-shaped macroparticles were studied using various characterization techniques, Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR), Thermogravimetric Analysis (TGA), and Differential Scanning Calorimetry (DSC). The release of CUR from the CS-based particles with respect to time was analyzed, and the encapsulation efficiency and degree of swelling were studied. All formulations showed excellent CUR trapping efficiency, exceeding 90%. In particular, the TPP-crosslinked macrobeads released 34 wt% of the charged CUR within minutes, while the remaining 66 wt% was released slowly. The results indicate that the correct choice of gelling agent and its concentration leads to spherical particles capable of encapsulating CUR and releasing it in a wide range of kinetics so that macrospheres can be used in different applications. Full article
(This article belongs to the Special Issue Advanced Materials for Biomedical Applications)
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10 pages, 413 KB  
Article
Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors
by Seema Morab, Manickam Minakshi Sundaram and Almantas Pivrikas
Materials 2023, 16(13), 4691; https://doi.org/10.3390/ma16134691 - 29 Jun 2023
Cited by 10 | Viewed by 2115
Abstract
Charge transport characteristics in organic semiconductor devices become altered in the presence of traps due to defects or impurities in the semiconductors. These traps can lead to a decrease in charge carrier mobility and an increase in recombination rates, thereby ultimately affecting the [...] Read more.
Charge transport characteristics in organic semiconductor devices become altered in the presence of traps due to defects or impurities in the semiconductors. These traps can lead to a decrease in charge carrier mobility and an increase in recombination rates, thereby ultimately affecting the overall performance of the device. It is therefore important to understand and mitigate the impact of traps on organic semiconductor devices. In this contribution, the influence of the capture and release times of trap states, recombination rates, and the Lorentz force on the net charge of a low-mobility organic semiconductor was determined using the finite element method (FEM) and Hall effect method through numerical simulations. The findings suggest that increasing magnetic fields had a lesser impact on net charge at constant capture and release times of trap states. On the other hand, by increasing the capture time of trap states at a constant magnetic field and fixed release time, the net charge extracted from the semiconductor device increased with increasing capture time. Moreover, the net charge extracted from the semiconductor device was nearly four and eight times greater in the case of the non-Langevin recombination rates of 0.01 and 0.001, respectively, when compared to the Langevin rate. These results imply that the non-Langevin recombination rate can significantly enhance the performance of semiconductor devices, particularly in applications that require efficient charge extraction. These findings pave the way for the development of more efficient and cost-effective electronic devices with improved charge transport properties and higher power conversion efficiencies, thus further opening up new avenues for research and innovation in this area of modern semiconductor technology. Full article
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13 pages, 4154 KB  
Article
Knock Mitigation and Power Enhancement of Hydrogen Spark-Ignition Engine through Ammonia Blending
by Haiwen Ge, Ahmad Hadi Bakir and Peng Zhao
Machines 2023, 11(6), 651; https://doi.org/10.3390/machines11060651 - 16 Jun 2023
Cited by 19 | Viewed by 3676
Abstract
Hydrogen and ammonia are primary carbon-free fuels that have massive production potential. In regard to their flame properties, these two fuels largely represent the two extremes among all fuels. The extremely fast flame speed of hydrogen can lead to an easy deflagration-to-detonation transition [...] Read more.
Hydrogen and ammonia are primary carbon-free fuels that have massive production potential. In regard to their flame properties, these two fuels largely represent the two extremes among all fuels. The extremely fast flame speed of hydrogen can lead to an easy deflagration-to-detonation transition and cause detonation-type engine knock that limits the global equivalence ratio, and consequently the engine power. The very low flame speed and reactivity of ammonia can lead to a low heat release rate and cause difficulty in ignition and ammonia slip. Adding ammonia into hydrogen can effectively modulate flame speed and hence the heat release rate, which in turn mitigates engine knock and retains the zero-carbon nature of the system. However, a key issue that remains unclear is the blending ratio of NH3 that provides the desired heat release rate, emission level, and engine power. In the present work, a 3D computational combustion study is conducted to search for the optimal hydrogen/ammonia mixture that is knock-free and meanwhile allows sufficient power in a typical spark-ignition engine configuration. Parametric studies with varying global equivalence ratios and hydrogen/ammonia blends are conducted. The results show that with added ammonia, engine knock can be avoided, even under stoichiometric operating conditions. Due to the increased global equivalence ratio and added ammonia, the energy content of trapped charge as well as work output per cycle is increased. About 90% of the work output of a pure gasoline engine under the same conditions can be reached by hydrogen/ammonia blends. The work shows great potential of blended fuel or hydrogen/ammonia dual fuel in high-speed SI engines. Full article
(This article belongs to the Special Issue Advances in Combustion Science for Future IC Engines)
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